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Si3932DV-T1-GE3 Vishay Siliconix
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Description: MOSFET 2N-CH 30V 3.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.35 EUR |
6000+ | 0.34 EUR |
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Technische Details Si3932DV-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.7A, Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 6-TSOP.
Weitere Produktangebote Si3932DV-T1-GE3 nach Preis ab 0.37 EUR bis 0.93 EUR
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Si3932DV-T1-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 259972 Stücke: Lieferzeit 10-14 Tag (e) |
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Si3932DV-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-TSOP |
auf Bestellung 7712 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3932DV-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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Si3932DV-T1-GE3 |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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Si3932DV-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 3.7A; Idm: 15A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.7A Pulsed drain current: 15A Power dissipation: 1.4W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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Si3932DV-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 3.7A; Idm: 15A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.7A Pulsed drain current: 15A Power dissipation: 1.4W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |