auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3433CDV-T1-GE3 Vishay
Description: MOSFET P-CH 20V 6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V, Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V.
Weitere Produktangebote SI3433CDV-T1-GE3 nach Preis ab 0.17 EUR bis 0.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI3433CDV-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SI3433CDV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SI3433CDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI3433CDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI3433CDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R |
auf Bestellung 2434 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI3433CDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R |
auf Bestellung 2434 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI3433CDV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
auf Bestellung 13838 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SI3433CDV-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 8V Vgs TSOP-6 |
auf Bestellung 7295 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||||
 |
SI3433CDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| SI3433CDV-T1-GE3 | Hersteller : Vishay Siliconix |
MOSFET P-CH 20V 6A 6TSOP |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
 |
SI3433CDV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Drain-source voltage: -20V Drain current: -6A On-state resistance: 38mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: TSOP6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI3433CDV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Drain-source voltage: -20V Drain current: -6A On-state resistance: 38mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: TSOP6 |
Produkt ist nicht verfügbar |