Produkte > VISHAY > Alle Produkte des Herstellers VISHAY (326433) > Seite 788 nach 5441

Wählen Sie Seite:   [  << Vorherige Seite ]  1 544 783 784 785 786 787 788 789 790 791 792 793 1088 1632 2176 2720 3264 3808 4352 4896 5440 5441  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
SI4090BDY-T1-GE3 VISHAY si4090bdy.pdf SI4090BDY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4090DY-T1-GE3 VISHAY si4090dy.pdf SI4090DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4100DY-T1-E3 VISHAY si4100dy.pdf SI4100DY-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4100DY-T1-GE3 VISHAY si4100dy.pdf SI4100DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4101DY-T1-GE3 VISHAY si4101dy.pdf SI4101DY-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI4103DY-T1-GE3 VISHAY si4103dy.pdf SI4103DY-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI4114DY-T1-E3 VISHAY si4114dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W
Mounting: SMD
Drain current: 20A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 50A
Case: SO8
Drain-source voltage: 20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4114DY-T1-GE3 VISHAY si4114dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W
Mounting: SMD
Drain current: 20A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 50A
Case: SO8
Drain-source voltage: 20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4116DY-T1-E3 VISHAY si4116dy.pdf SI4116DY-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4116DY-T1-GE3 VISHAY si4116dy.pdf SI4116DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4122DY-T1-GE3 VISHAY si4122dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 27.2A; Idm: 70A; 6W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 27.2A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 95nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 70A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4124DY-T1-E3 VISHAY si4124dy.pdf SI4124DY-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4124DY-T1-GE3 VISHAY si4124dy.pdf SI4124DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4126DY-T1-GE3 VISHAY si4126dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 39A; Idm: 70A; 7.8W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 39A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 7.8W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4128DY-T1-GE3 SI4128DY-T1-GE3 VISHAY si4128dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.7A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.7A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI4134DY-T1-GE3 SI4134DY-T1-GE3 VISHAY si4134dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.2A; 3.2W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 11.2A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6991 Stücke:
Lieferzeit 7-14 Tag (e)
93+0.77 EUR
125+ 0.57 EUR
251+ 0.28 EUR
266+ 0.27 EUR
Mindestbestellmenge: 93
SI4136DY-T1-GE3 VISHAY si4136dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4143DY-T1-GE3 VISHAY si4143dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -25.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25.3A
Pulsed drain current: -70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4151DY-T1-GE3 VISHAY si4151dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.5A; 5.6W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -20.5A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 5.6W
Polarisation: unipolar
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4153DY-T1-GE3 VISHAY si4153dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -19.3A; 5.6W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -19.3A
Pulsed drain current: -100A
Power dissipation: 5.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4154DY-T1-GE3 VISHAY si4154dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 36A; Idm: 70A; 7.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36A
Pulsed drain current: 70A
Power dissipation: 7.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4156DY-T1-GE3 VISHAY si4156dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 70A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4160DY-T1-GE3 VISHAY si4160dy.pdf SI4160DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4162DY-T1-GE3 SI4162DY-T1-GE3 VISHAY SI4162DY.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.4A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.4A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1697 Stücke:
Lieferzeit 7-14 Tag (e)
125+0.57 EUR
139+ 0.52 EUR
181+ 0.4 EUR
191+ 0.37 EUR
Mindestbestellmenge: 125
SI4164DY-T1-GE3 VISHAY si4164dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: SO8
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 95nC
Technology: TrenchFET®
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4166DY-T1-GE3 VISHAY si4166dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.5A; Idm: 70A
Kind of package: reel; tape
Drain current: 30.5A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 6.5W
Polarisation: unipolar
Case: SO8
Gate charge: 65nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 70A
Drain-source voltage: 30V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4168DY-T1-GE3 VISHAY si4168dy.pdf SI4168DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4174DY-T1-GE3 SI4174DY-T1-GE3 VISHAY si4174dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.5A; 3.2W; SO8
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 13.5A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1842 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
102+ 0.7 EUR
117+ 0.61 EUR
135+ 0.53 EUR
143+ 0.5 EUR
Mindestbestellmenge: 59
SI4178DY-T1-GE3 SI4178DY-T1-GE3 VISHAY SI4178DY-T1-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; 5W; SO8
Case: SO8
Mounting: SMD
On-state resistance: 33mΩ
Kind of package: reel; tape
Power dissipation: 5W
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Drain current: 6.7A
Drain-source voltage: 30V
Polarisation: unipolar
Gate charge: 12nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2493 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.72 EUR
136+ 0.53 EUR
221+ 0.32 EUR
233+ 0.31 EUR
2500+ 0.3 EUR
Mindestbestellmenge: 100
SI4186DY-T1-GE3 VISHAY si4186dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35.8A; Idm: 70A; 6W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: SO8
Drain-source voltage: 20V
Drain current: 35.8A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4190ADY-T1-GE3 VISHAY si4190ady.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 18.4A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18.4A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4202DY-T1-GE3 SI4202DY-T1-GE3 VISHAY si4202dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; Idm: 50A; 2.6W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.1A
Pulsed drain current: 50A
Power dissipation: 2.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4204DY-T1-GE3 SI4204DY-T1-GE3 VISHAY si4204dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15.5A; Idm: 50A; 2.1W; SO8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: SO8
Drain-source voltage: 20V
Drain current: 15.5A
On-state resistance: 4.6mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Si4214DDY-T1-E3 VISHAY si4214ddy-t1-e3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8.5A; Idm: 30A
Mounting: SMD
Drain-source voltage: 30V
Drain current: 8.5A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Si4214DDY-T1-GE3 Si4214DDY-T1-GE3 VISHAY si4214ddy-t1-e3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 19.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Si4228DY-T1-GE3 Si4228DY-T1-GE3 VISHAY si4228dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI4288DY-T1-GE3 SI4288DY-T1-GE3 VISHAY si4288dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4613 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.63 EUR
50+ 1.46 EUR
64+ 1.13 EUR
67+ 1.07 EUR
Mindestbestellmenge: 44
SI4368DY-T1-E3 VISHAY si4368dy.pdf SI4368DY-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4386DY-T1-E3 VISHAY si4386dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 9.5mΩ
Drain current: 16A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4386DY-T1-GE3 VISHAY si4386dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 9.5mΩ
Drain current: 16A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4392ADY-T1-E3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4401BDY-T1-E3 SI4401BDY-T1-E3 VISHAY si4401bdy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; 2.9W; SO8
Case: SO8
Drain-source voltage: -40V
Drain current: -8.3A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 999 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
43+ 1.67 EUR
54+ 1.34 EUR
57+ 1.27 EUR
500+ 1.23 EUR
Mindestbestellmenge: 41
SI4401BDY-T1-GE3 SI4401BDY-T1-GE3 VISHAY si4401bdy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -50A; 0.95W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.7A
Pulsed drain current: -50A
Power dissipation: 0.95W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI4401DDY-T1-GE3 SI4401DDY-T1-GE3 VISHAY si4401dd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -16.1A; Idm: -50A; 4W; SO8
Case: SO8
Drain-source voltage: -40V
Drain current: -16.1A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3241 Stücke:
Lieferzeit 7-14 Tag (e)
73+0.99 EUR
88+ 0.82 EUR
182+ 0.39 EUR
193+ 0.37 EUR
5000+ 0.36 EUR
Mindestbestellmenge: 73
SI4401FDY-T1-GE3 SI4401FDY-T1-GE3 VISHAY si4401fdy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A
Case: SO8
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 18.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3325 Stücke:
Lieferzeit 7-14 Tag (e)
68+1.06 EUR
87+ 0.83 EUR
96+ 0.75 EUR
126+ 0.57 EUR
133+ 0.54 EUR
Mindestbestellmenge: 68
SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 VISHAY si4403cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A
Case: SO8
Drain-source voltage: -20V
Drain current: -13.4A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2139 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
100+ 0.72 EUR
108+ 0.66 EUR
113+ 0.64 EUR
128+ 0.56 EUR
136+ 0.53 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 81
SI4403DDY-T1-GE3 SI4403DDY-T1-GE3 VISHAY SI4403DDY.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.3A; 3.2W; SO8
Case: SO8
Drain-source voltage: -20V
Drain current: -12.3A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 39nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1867 Stücke:
Lieferzeit 7-14 Tag (e)
71+1.02 EUR
124+ 0.58 EUR
140+ 0.51 EUR
161+ 0.45 EUR
170+ 0.42 EUR
Mindestbestellmenge: 71
Si4408DY-T1-E3 VISHAY si4408dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4408DY-T1-GE3 VISHAY 70687.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4420BDY-T1-E3 VISHAY si4420bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4420BDY-T1-GE3 VISHAY 73067.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4421DY-T1-E3 VISHAY si4421dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4421DY-T1-GE3 VISHAY si4421dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4423DY-T1-E3 VISHAY si4423dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4423DY-T1-GE3 VISHAY si4423dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4425BDY-T1-E3 SI4425BDY-T1-E3 VISHAY si4425bd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; Idm: -50A; 0.9W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Pulsed drain current: -50A
Power dissipation: 0.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4425BDY-T1-GE3 VISHAY si4425bd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -11.4A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4425DDY-T1-GE3 SI4425DDY-T1-GE3 VISHAY SI4425DDY.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15.7A; 3.6W; SO8
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 3.6W
Type of transistor: P-MOSFET
Gate charge: 27nC
On-state resistance: 9.8mΩ
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: -15.7A
Drain-source voltage: -30V
Case: SO8
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3233 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
139+ 0.51 EUR
148+ 0.49 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 70
SI4425FDY-T1-GE3 VISHAY si4425fdy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18.3A
Pulsed drain current: -70A
Power dissipation: 4.8W
Case: SO8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI4426DY-T1-E3 VISHAY si4426dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A
Drain-source voltage: 20V
Drain current: 8.5A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4090BDY-T1-GE3 si4090bdy.pdf
Hersteller: VISHAY
SI4090BDY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4090DY-T1-GE3 si4090dy.pdf
Hersteller: VISHAY
SI4090DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4100DY-T1-E3 si4100dy.pdf
Hersteller: VISHAY
SI4100DY-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4100DY-T1-GE3 si4100dy.pdf
Hersteller: VISHAY
SI4100DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4101DY-T1-GE3 si4101dy.pdf
Hersteller: VISHAY
SI4101DY-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI4103DY-T1-GE3 si4103dy.pdf
Hersteller: VISHAY
SI4103DY-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SI4114DY-T1-E3 si4114dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W
Mounting: SMD
Drain current: 20A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 50A
Case: SO8
Drain-source voltage: 20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4114DY-T1-GE3 si4114dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W
Mounting: SMD
Drain current: 20A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 50A
Case: SO8
Drain-source voltage: 20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4116DY-T1-E3 si4116dy.pdf
Hersteller: VISHAY
SI4116DY-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4116DY-T1-GE3 si4116dy.pdf
Hersteller: VISHAY
SI4116DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4122DY-T1-GE3 si4122dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 27.2A; Idm: 70A; 6W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 27.2A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 95nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 70A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4124DY-T1-E3 si4124dy.pdf
Hersteller: VISHAY
SI4124DY-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4124DY-T1-GE3 si4124dy.pdf
Hersteller: VISHAY
SI4124DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4126DY-T1-GE3 si4126dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 39A; Idm: 70A; 7.8W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 39A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 7.8W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4128DY-T1-GE3 si4128dy.pdf
SI4128DY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.7A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.7A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI4134DY-T1-GE3 si4134dy.pdf
SI4134DY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.2A; 3.2W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 11.2A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6991 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
93+0.77 EUR
125+ 0.57 EUR
251+ 0.28 EUR
266+ 0.27 EUR
Mindestbestellmenge: 93
SI4136DY-T1-GE3 si4136dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4143DY-T1-GE3 si4143dy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -25.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25.3A
Pulsed drain current: -70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4151DY-T1-GE3 si4151dy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.5A; 5.6W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -20.5A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 5.6W
Polarisation: unipolar
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4153DY-T1-GE3 si4153dy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -19.3A; 5.6W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -19.3A
Pulsed drain current: -100A
Power dissipation: 5.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4154DY-T1-GE3 si4154dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 36A; Idm: 70A; 7.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36A
Pulsed drain current: 70A
Power dissipation: 7.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4156DY-T1-GE3 si4156dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 70A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4160DY-T1-GE3 si4160dy.pdf
Hersteller: VISHAY
SI4160DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4162DY-T1-GE3 SI4162DY.pdf
SI4162DY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.4A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.4A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1697 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
125+0.57 EUR
139+ 0.52 EUR
181+ 0.4 EUR
191+ 0.37 EUR
Mindestbestellmenge: 125
SI4164DY-T1-GE3 si4164dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: SO8
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 95nC
Technology: TrenchFET®
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4166DY-T1-GE3 si4166dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.5A; Idm: 70A
Kind of package: reel; tape
Drain current: 30.5A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 6.5W
Polarisation: unipolar
Case: SO8
Gate charge: 65nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 70A
Drain-source voltage: 30V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4168DY-T1-GE3 si4168dy.pdf
Hersteller: VISHAY
SI4168DY-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4174DY-T1-GE3 si4174dy.pdf
SI4174DY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.5A; 3.2W; SO8
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 13.5A
On-state resistance: 9.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1842 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
102+ 0.7 EUR
117+ 0.61 EUR
135+ 0.53 EUR
143+ 0.5 EUR
Mindestbestellmenge: 59
SI4178DY-T1-GE3 SI4178DY-T1-DTE.pdf
SI4178DY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; 5W; SO8
Case: SO8
Mounting: SMD
On-state resistance: 33mΩ
Kind of package: reel; tape
Power dissipation: 5W
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Drain current: 6.7A
Drain-source voltage: 30V
Polarisation: unipolar
Gate charge: 12nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2493 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
100+0.72 EUR
136+ 0.53 EUR
221+ 0.32 EUR
233+ 0.31 EUR
2500+ 0.3 EUR
Mindestbestellmenge: 100
SI4186DY-T1-GE3 si4186dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35.8A; Idm: 70A; 6W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: SO8
Drain-source voltage: 20V
Drain current: 35.8A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4190ADY-T1-GE3 si4190ady.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 18.4A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18.4A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4202DY-T1-GE3 si4202dy.pdf
SI4202DY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; Idm: 50A; 2.6W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.1A
Pulsed drain current: 50A
Power dissipation: 2.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4204DY-T1-GE3 si4204dy.pdf
SI4204DY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15.5A; Idm: 50A; 2.1W; SO8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: SO8
Drain-source voltage: 20V
Drain current: 15.5A
On-state resistance: 4.6mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Si4214DDY-T1-E3 si4214ddy-t1-e3.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8.5A; Idm: 30A
Mounting: SMD
Drain-source voltage: 30V
Drain current: 8.5A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Si4214DDY-T1-GE3 si4214ddy-t1-e3.pdf
Si4214DDY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 7.5A
On-state resistance: 19.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Si4228DY-T1-GE3 si4228dy.pdf
Si4228DY-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI4288DY-T1-GE3 si4288dy.pdf
SI4288DY-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4613 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
44+1.63 EUR
50+ 1.46 EUR
64+ 1.13 EUR
67+ 1.07 EUR
Mindestbestellmenge: 44
SI4368DY-T1-E3 si4368dy.pdf
Hersteller: VISHAY
SI4368DY-T1-E3 SMD N channel transistors
Produkt ist nicht verfügbar
SI4386DY-T1-E3 si4386dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 9.5mΩ
Drain current: 16A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4386DY-T1-GE3 si4386dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3.1W
Technology: TrenchFET®
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 9.5mΩ
Drain current: 16A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 50A
Gate charge: 18nC
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4392ADY-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4401BDY-T1-E3 si4401bdy.pdf
SI4401BDY-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; 2.9W; SO8
Case: SO8
Drain-source voltage: -40V
Drain current: -8.3A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 999 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
43+ 1.67 EUR
54+ 1.34 EUR
57+ 1.27 EUR
500+ 1.23 EUR
Mindestbestellmenge: 41
SI4401BDY-T1-GE3 si4401bdy.pdf
SI4401BDY-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -50A; 0.95W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.7A
Pulsed drain current: -50A
Power dissipation: 0.95W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI4401DDY-T1-GE3 si4401dd.pdf
SI4401DDY-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -16.1A; Idm: -50A; 4W; SO8
Case: SO8
Drain-source voltage: -40V
Drain current: -16.1A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3241 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
73+0.99 EUR
88+ 0.82 EUR
182+ 0.39 EUR
193+ 0.37 EUR
5000+ 0.36 EUR
Mindestbestellmenge: 73
SI4401FDY-T1-GE3 si4401fdy.pdf
SI4401FDY-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A
Case: SO8
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 18.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -80A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3325 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
68+1.06 EUR
87+ 0.83 EUR
96+ 0.75 EUR
126+ 0.57 EUR
133+ 0.54 EUR
Mindestbestellmenge: 68
SI4403CDY-T1-GE3 si4403cd.pdf
SI4403CDY-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A
Case: SO8
Drain-source voltage: -20V
Drain current: -13.4A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2139 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
100+ 0.72 EUR
108+ 0.66 EUR
113+ 0.64 EUR
128+ 0.56 EUR
136+ 0.53 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 81
SI4403DDY-T1-GE3 SI4403DDY.pdf
SI4403DDY-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.3A; 3.2W; SO8
Case: SO8
Drain-source voltage: -20V
Drain current: -12.3A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 39nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1867 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
71+1.02 EUR
124+ 0.58 EUR
140+ 0.51 EUR
161+ 0.45 EUR
170+ 0.42 EUR
Mindestbestellmenge: 71
Si4408DY-T1-E3 si4408dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4408DY-T1-GE3 70687.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4420BDY-T1-E3 si4420bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4420BDY-T1-GE3 73067.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4421DY-T1-E3 si4421dy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4421DY-T1-GE3 si4421dy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4423DY-T1-E3 si4423dy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4423DY-T1-GE3 si4423dy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4425BDY-T1-E3 si4425bd.pdf
SI4425BDY-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; Idm: -50A; 0.9W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Pulsed drain current: -50A
Power dissipation: 0.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4425BDY-T1-GE3 si4425bd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -11.4A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4425DDY-T1-GE3 SI4425DDY.pdf
SI4425DDY-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15.7A; 3.6W; SO8
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 3.6W
Type of transistor: P-MOSFET
Gate charge: 27nC
On-state resistance: 9.8mΩ
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: -15.7A
Drain-source voltage: -30V
Case: SO8
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3233 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
139+ 0.51 EUR
148+ 0.49 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 70
SI4425FDY-T1-GE3 si4425fdy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18.3A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18.3A
Pulsed drain current: -70A
Power dissipation: 4.8W
Case: SO8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI4426DY-T1-E3 si4426dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 8.5A; Idm: 40A
Drain-source voltage: 20V
Drain current: 8.5A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 544 783 784 785 786 787 788 789 790 791 792 793 1088 1632 2176 2720 3264 3808 4352 4896 5440 5441  [ Nächste Seite >> ]