Si4214DDY-T1-E3 Vishay Semiconductors
auf Bestellung 18541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.56 EUR |
10+ | 1.36 EUR |
100+ | 0.92 EUR |
500+ | 0.72 EUR |
1000+ | 0.65 EUR |
2500+ | 0.54 EUR |
5000+ | 0.53 EUR |
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Technische Details Si4214DDY-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 8.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.5A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote Si4214DDY-T1-E3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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Si4214DDY-T1-E3 |
auf Bestellung 8200 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4214DDY-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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Si4214DDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8.5A; Idm: 30A Mounting: SMD Drain-source voltage: 30V Drain current: 8.5A On-state resistance: 23mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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Si4214DDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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Si4214DDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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Si4214DDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8.5A; Idm: 30A Mounting: SMD Drain-source voltage: 30V Drain current: 8.5A On-state resistance: 23mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Case: SO8 |
Produkt ist nicht verfügbar |