SI4204DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 20V 19.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.34 EUR |
| 5000+ | 1.29 EUR |
| 12500+ | 1.25 EUR |
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Technische Details SI4204DY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI4204DY-T1-GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 19.8 A, 19.8 A, 0.0038 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 19.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 19.8A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0038ohm, Verlustleistung, p-Kanal: 3.25W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0038ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 3.25W, Betriebstemperatur, max.: 150°C, SVHC: Lead (10-Jun-2022).
Weitere Produktangebote SI4204DY-T1-GE3 nach Preis ab 1.31 EUR bis 2.99 EUR
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SI4204DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V Vds 20V Vgs SO-8 |
auf Bestellung 27053 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4204DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 19.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 19.8A Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 21113 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4204DY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4204DY-T1-GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 19.8 A, 19.8 A, 0.0038 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 19.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 19.8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0038ohm Verlustleistung, p-Kanal: 3.25W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0038ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 3.25W Betriebstemperatur, max.: 150°C SVHC: Lead (10-Jun-2022) |
auf Bestellung 10663 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4204DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 19.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4204DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 15.5A; Idm: 50A; 2.1W; SO8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: SO8 Drain-source voltage: 20V Drain current: 15.5A On-state resistance: 4.6mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI4204DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 15.5A; Idm: 50A; 2.1W; SO8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: SO8 Drain-source voltage: 20V Drain current: 15.5A On-state resistance: 4.6mΩ |
Produkt ist nicht verfügbar |