SI3443BDV-T1-GE3
Hersteller: auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SI3443BDV-T1-GE3
Description: MOSFET P-CH 20V 3.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V.
Weitere Produktangebote SI3443BDV-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI3443BDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3443BDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3443BDV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A Drain-source voltage: -20V Drain current: -3.6A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -20A Mounting: SMD Case: TSOP6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI3443BDV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.6A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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SI3443BDV-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V 4.7A 2.0W 60mohm @ 4.5V |
Produkt ist nicht verfügbar |
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| SI3443BDV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A Drain-source voltage: -20V Drain current: -3.6A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -20A Mounting: SMD Case: TSOP6 |
Produkt ist nicht verfügbar |