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auf Bestellung 75000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 0.28 EUR |
18000+ | 0.25 EUR |
36000+ | 0.22 EUR |
54000+ | 0.2 EUR |
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Technische Details SI3483CDV-T1-GE3 Vishay
Description: MOSFET P-CH 30V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V, Power Dissipation (Max): 2W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V.
Weitere Produktangebote SI3483CDV-T1-GE3 nach Preis ab 0.25 EUR bis 1.59 EUR
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SI3483CDV-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 2.7W; TSOP6 Drain-source voltage: -30V Drain current: -7A On-state resistance: 34mΩ Type of transistor: P-MOSFET Power dissipation: 2.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TSOP6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2439 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 2.7W; TSOP6 Drain-source voltage: -30V Drain current: -7A On-state resistance: 34mΩ Type of transistor: P-MOSFET Power dissipation: 2.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TSOP6 |
auf Bestellung 2439 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
auf Bestellung 77716 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 1399 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 1399 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
auf Bestellung 80848 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 53176 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3483CDV-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI3483CDV-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |