SI3437DV-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 150V 1.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.56 EUR |
| 6000+ | 0.53 EUR |
| 9000+ | 0.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3437DV-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 150V 1.4A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V, Power Dissipation (Max): 2W (Ta), 3.2W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V.
Weitere Produktangebote SI3437DV-T1-E3 nach Preis ab 0.4 EUR bis 1.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI3437DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 1.1A 6-Pin TSOP T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI3437DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 1.1A 6-Pin TSOP T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SI3437DV-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET -150V Vds 20V Vgs TSOP-6 |
auf Bestellung 103167 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SI3437DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 150V 1.4A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Power Dissipation (Max): 2W (Ta), 3.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V |
auf Bestellung 14232 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SI3437DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 1.1A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI3437DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 1.1A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| SI3437DV-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| SI3437DV-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |