auf Bestellung 11466 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.59 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.93 EUR |
| 3000+ | 0.79 EUR |
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Technische Details SI3499DV-T1-BE3 Vishay / Siliconix
Description: P-CHANNEL 1.5-V (G-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 750mV @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V.
Weitere Produktangebote SI3499DV-T1-BE3 nach Preis ab 0.8 EUR bis 1.76 EUR
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SI3499DV-T1-BE3 | Hersteller : Vishay Siliconix |
 Description: P-CHANNEL 1.5-V (G-S) MOSFETPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 750mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V |
auf Bestellung 2911 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3499DV-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W Mounting: SMD Case: TSOP6 Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -20A Power dissipation: 2W Drain-source voltage: -8V Drain current: -7A On-state resistance: 48mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI3499DV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 1.5-V (G-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 750mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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| SI3499DV-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W Mounting: SMD Case: TSOP6 Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -20A Power dissipation: 2W Drain-source voltage: -8V Drain current: -7A On-state resistance: 48mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |