![SI3443BDV-T1-E3 SI3443BDV-T1-E3](https://static6.arrow.com/aropdfconversion/arrowimages/d163cbbea0b38a9baa669ce9bc469721b85fc714/si3129dv.jpg)
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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450+ | 0.34 EUR |
452+ | 0.33 EUR |
507+ | 0.28 EUR |
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Technische Details SI3443BDV-T1-E3 Vishay
Description: MOSFET P-CH 20V 3.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V.
Weitere Produktangebote SI3443BDV-T1-E3 nach Preis ab 0.24 EUR bis 1.05 EUR
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SI3443BDV-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; 1.3W; TSOP6 Mounting: SMD Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±12V Case: TSOP6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2995 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3443BDV-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; 1.3W; TSOP6 Mounting: SMD Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±12V Case: TSOP6 |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3443BDV-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3443BDV-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V |
auf Bestellung 6318 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3443BDV-T1-E3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 153406 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3443BDV-T1-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI3443BDV-T1-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |