Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TCR2EF18,LM(CT | TOSHIBA |
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Produkt ist nicht verfügbar |
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TCR2EF25,LM(T | TOSHIBA |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT25; SMD Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: SOT25 Output voltage: 2.5V Output current: 0.2A Voltage drop: 0.18V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.5...5.5V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 860 Stücke: Lieferzeit 7-14 Tag (e) |
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TCR2EF27,LM(CT | TOSHIBA |
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auf Bestellung 410 Stücke: Lieferzeit 7-14 Tag (e) |
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TCR2EF28,LM(CT | TOSHIBA |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 2.8V Output current: 0.2A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.5...5.5V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2483 Stücke: Lieferzeit 7-14 Tag (e) |
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TCR2EF30,LM(CT | TOSHIBA |
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Produkt ist nicht verfügbar |
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TCR2EF33,LM(CT | TOSHIBA |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 3.3V Output current: 0.2A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.5...5.5V Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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TCR2EF41,LM(CT | TOSHIBA |
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Produkt ist nicht verfügbar |
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TCR2EF45,LM(CT | TOSHIBA |
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Produkt ist nicht verfügbar |
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TCR2LE18,LM(CT | TOSHIBA |
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Produkt ist nicht verfügbar |
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TCR2LF18,LM(CT | TOSHIBA |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.37V Output voltage: 1.8V Output current: 0.2A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.5...5.5V Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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TCR2LF25,LM(CT | TOSHIBA |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT25; SMD Operating temperature: -40...85°C Mounting: SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Case: SOT25 Output voltage: 2.5V Output current: 0.2A Voltage drop: 0.27V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.5...5.5V Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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TCR2LF30,LM(CT | TOSHIBA |
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Produkt ist nicht verfügbar |
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TCR2LF36,LM(CT | TOSHIBA |
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Produkt ist nicht verfügbar |
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TCR3UG12A,LF(S | TOSHIBA |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; WCSP4F; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.66V Output voltage: 1.2V Output current: 0.3A Case: WCSP4F Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.5...5.5V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TCR3UG30A,LF(S | TOSHIBA | TCR3UG30A LDO unregulated voltage regulators |
Produkt ist nicht verfügbar |
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TCR3UG33A,LF(S | TOSHIBA |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; WCSP4F; SMD Operating temperature: -40...85°C Number of channels: 1 Mounting: SMD Case: WCSP4F Output voltage: 3.3V Output current: 0.3A Voltage drop: 0.14V Type of integrated circuit: voltage regulator Input voltage: 1.5...5.5V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TCR5AM10,LF(S | TOSHIBA | TCR5AM10 LDO unregulated voltage regulators |
auf Bestellung 991 Stücke: Lieferzeit 7-14 Tag (e) |
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TCR5AM11,LF(S | TOSHIBA | TCR5AM11 LDO unregulated voltage regulators |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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TCR5AM12,LF(S | TOSHIBA | TCR5AM12 LDO unregulated voltage regulators |
Produkt ist nicht verfügbar |
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TDTA114E,LM(T | TOSHIBA |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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TDTA123J,LM(T | TOSHIBA |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 2.2kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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TDTA124E,LM(T | TOSHIBA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; SOT23; R1: 22kΩ; R2: 22kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 22kΩ Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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TDTA143E,LM(T | TOSHIBA |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 4.7kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Frequency: 250MHz Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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TDTA144E,LM(T | TOSHIBA |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 48810 Stücke: Lieferzeit 7-14 Tag (e) |
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TDTC114E,LM(T | TOSHIBA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 7210 Stücke: Lieferzeit 7-14 Tag (e) |
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TDTC114Y,LM(T | TOSHIBA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 5 Stücke |
auf Bestellung 7910 Stücke: Lieferzeit 7-14 Tag (e) |
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TDTC123J,LM(T | TOSHIBA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 2.2kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 5980 Stücke: Lieferzeit 7-14 Tag (e) |
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TDTC124E,LM(T | TOSHIBA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 22kΩ Frequency: 250MHz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 8050 Stücke: Lieferzeit 7-14 Tag (e) |
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TDTC143E,LM(T | TOSHIBA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 4.7kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Frequency: 250MHz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 7490 Stücke: Lieferzeit 7-14 Tag (e) |
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TDTC143Z,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 4.7kΩ; R2: 47kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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TDTC144E,LM(T | TOSHIBA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10660 Stücke: Lieferzeit 7-14 Tag (e) |
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TJ15S06M3L(T6L1,NQ | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -15A; 41W; DPAK Mounting: SMD Case: DPAK Drain-source voltage: -60V Drain current: -15A On-state resistance: 43mΩ Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: -20...10V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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TJ30S06M3L,LXHQ(O | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 68W; DPAK Kind of package: reel; tape Drain current: -30A On-state resistance: 16.8mΩ Type of transistor: P-MOSFET Power dissipation: 68W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: -20...10V Mounting: SMD Case: DPAK Drain-source voltage: -60V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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TJ60S06M3L(T6L1,NQ | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -60A; Idm: -120A; 100W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -60A Pulsed drain current: -120A Power dissipation: 100W Case: DPAK Gate-source voltage: -20...10V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TJ9A10M3,S4Q | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -9A; 19W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -9A Power dissipation: 19W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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TK040N65Z,S1F(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 57A; Idm: 228A; 360W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 57A Pulsed drain current: 228A Power dissipation: 360W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK100A06N1,S4X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 263A; 45W; TO220FP Mounting: THT Drain-source voltage: 60V Drain current: 263A On-state resistance: 2.7mΩ Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Kind of package: tube Gate charge: 0.14µC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220FP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 615 Stücke: Lieferzeit 7-14 Tag (e) |
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TK100E06N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB Polarisation: unipolar Power dissipation: 255W Kind of package: tube Gate charge: 0.14µC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220AB Drain-source voltage: 60V Drain current: 100A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK100E10N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 255W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 255W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 217 Stücke: Lieferzeit 7-14 Tag (e) |
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TK10A60W,S4VX(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67 Mounting: THT Kind of package: tube Power dissipation: 30W Polarisation: unipolar Case: SC67 Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 9.7A On-state resistance: 327mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK10A60W5,S5VX(M | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67 Mounting: THT Power dissipation: 30W Polarisation: unipolar Case: SC67 Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 9.7A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 901 Stücke: Lieferzeit 7-14 Tag (e) |
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TK10A80W,S4X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 9.5A; 40W; SC67 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 9.5A Power dissipation: 40W Case: SC67 Gate-source voltage: ±20V On-state resistance: 0.46Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 166 Stücke: Lieferzeit 7-14 Tag (e) |
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TK10E60W,S1VX(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 100W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.7A Power dissipation: 100W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK110P10PL,RQ(S2 | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 160A; 75W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 160A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 94 Stücke: Lieferzeit 7-14 Tag (e) |
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TK11P65W,RQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK Mounting: SMD Kind of package: reel; tape Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±30V Case: DPAK Drain-source voltage: 650V Drain current: 11.1A On-state resistance: 440mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK12P60W.RVQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11.5A Power dissipation: 100W Case: DPAK Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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TK12Q60W,S1VQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; Idm: 46A; 100W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11.5A Pulsed drain current: 46A Power dissipation: 100W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK13P25D,RQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 13A; 96W; DPAK Drain-source voltage: 250V Drain current: 13A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2800 Stücke: Lieferzeit 7-14 Tag (e) |
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TK14A65W,S5X(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.7A; 40W; TO220FP Mounting: THT Kind of package: tube Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±30V Case: TO220FP Drain-source voltage: 650V Drain current: 13.7A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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TK15J50D(F) | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 210W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Power dissipation: 210W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 930 Stücke: Lieferzeit 7-14 Tag (e) |
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TK160F10N1L,LQ(O | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 160A Power dissipation: 375W Case: TO220SM Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 121nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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TK16A60W,S4VX(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK16A60W5,S4VX(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 600 Stücke |
Produkt ist nicht verfügbar |
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TK16E60W,S1VX(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Power dissipation: 130W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 750 Stücke |
Produkt ist nicht verfügbar |
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TK16N60W,S1VF(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Power dissipation: 130W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK16N60W5,S1VF(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 63.2A Power dissipation: 130W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK18A30D,S5X(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 18A Power dissipation: 45W Case: SC67 Gate-source voltage: ±20V On-state resistance: 139mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK20A60W,S5VX(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 45W; TO220FP Mounting: THT Gate charge: 48nC Kind of channel: enhanced Gate-source voltage: ±30V Case: TO220FP Drain-source voltage: 600V Drain current: 20A On-state resistance: 0.13Ω Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 205 Stücke: Lieferzeit 7-14 Tag (e) |
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TK20G60W,RVQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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TK20N60W,S1VF(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 165W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
TCR2EF18,LM(CT |
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Hersteller: TOSHIBA
TCR2EF18 LDO unregulated voltage regulators
TCR2EF18 LDO unregulated voltage regulators
Produkt ist nicht verfügbar
TCR2EF25,LM(T |
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Hersteller: TOSHIBA
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT25; SMD
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT25
Output voltage: 2.5V
Output current: 0.2A
Voltage drop: 0.18V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 5 Stücke
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT25; SMD
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT25
Output voltage: 2.5V
Output current: 0.2A
Voltage drop: 0.18V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 860 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
375+ | 0.19 EUR |
535+ | 0.13 EUR |
600+ | 0.12 EUR |
680+ | 0.11 EUR |
715+ | 0.1 EUR |
3000+ | 0.099 EUR |
6000+ | 0.097 EUR |
TCR2EF27,LM(CT |
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Hersteller: TOSHIBA
TCR2EF27 LDO unregulated voltage regulators
TCR2EF27 LDO unregulated voltage regulators
auf Bestellung 410 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
358+ | 0.2 EUR |
410+ | 0.17 EUR |
6000+ | 0.12 EUR |
TCR2EF28,LM(CT |
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Hersteller: TOSHIBA
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 2.8V
Output current: 0.2A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 5 Stücke
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 2.8V
Output current: 0.2A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2483 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
360+ | 0.2 EUR |
500+ | 0.14 EUR |
565+ | 0.13 EUR |
690+ | 0.1 EUR |
730+ | 0.099 EUR |
TCR2EF30,LM(CT |
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Hersteller: TOSHIBA
TCR2EF30 LDO unregulated voltage regulators
TCR2EF30 LDO unregulated voltage regulators
Produkt ist nicht verfügbar
TCR2EF33,LM(CT |
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Hersteller: TOSHIBA
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 5 Stücke
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
TCR2EF41,LM(CT |
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Hersteller: TOSHIBA
TCR2EF41 LDO unregulated voltage regulators
TCR2EF41 LDO unregulated voltage regulators
Produkt ist nicht verfügbar
TCR2EF45,LM(CT |
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Hersteller: TOSHIBA
TCR2EF45.LMCT LDO unregulated voltage regulators
TCR2EF45.LMCT LDO unregulated voltage regulators
Produkt ist nicht verfügbar
TCR2LE18,LM(CT |
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Hersteller: TOSHIBA
TCR2LE18 LDO unregulated voltage regulators
TCR2LE18 LDO unregulated voltage regulators
Produkt ist nicht verfügbar
TCR2LF18,LM(CT |
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Hersteller: TOSHIBA
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.37V
Output voltage: 1.8V
Output current: 0.2A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 5 Stücke
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.37V
Output voltage: 1.8V
Output current: 0.2A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
TCR2LF25,LM(CT |
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Hersteller: TOSHIBA
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT25; SMD
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT25
Output voltage: 2.5V
Output current: 0.2A
Voltage drop: 0.27V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 5 Stücke
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT25; SMD
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT25
Output voltage: 2.5V
Output current: 0.2A
Voltage drop: 0.27V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
TCR2LF30,LM(CT |
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Hersteller: TOSHIBA
TCR2LF30 LDO unregulated voltage regulators
TCR2LF30 LDO unregulated voltage regulators
Produkt ist nicht verfügbar
TCR2LF36,LM(CT |
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Hersteller: TOSHIBA
TCR2LF36 LDO unregulated voltage regulators
TCR2LF36 LDO unregulated voltage regulators
Produkt ist nicht verfügbar
TCR3UG12A,LF(S |
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Hersteller: TOSHIBA
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; WCSP4F; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.66V
Output voltage: 1.2V
Output current: 0.3A
Case: WCSP4F
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 1 Stücke
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; WCSP4F; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.66V
Output voltage: 1.2V
Output current: 0.3A
Case: WCSP4F
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.5...5.5V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TCR3UG30A,LF(S |
Hersteller: TOSHIBA
TCR3UG30A LDO unregulated voltage regulators
TCR3UG30A LDO unregulated voltage regulators
Produkt ist nicht verfügbar
TCR3UG33A,LF(S |
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Hersteller: TOSHIBA
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; WCSP4F; SMD
Operating temperature: -40...85°C
Number of channels: 1
Mounting: SMD
Case: WCSP4F
Output voltage: 3.3V
Output current: 0.3A
Voltage drop: 0.14V
Type of integrated circuit: voltage regulator
Input voltage: 1.5...5.5V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Anzahl je Verpackung: 1 Stücke
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; WCSP4F; SMD
Operating temperature: -40...85°C
Number of channels: 1
Mounting: SMD
Case: WCSP4F
Output voltage: 3.3V
Output current: 0.3A
Voltage drop: 0.14V
Type of integrated circuit: voltage regulator
Input voltage: 1.5...5.5V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TCR5AM10,LF(S |
Hersteller: TOSHIBA
TCR5AM10 LDO unregulated voltage regulators
TCR5AM10 LDO unregulated voltage regulators
auf Bestellung 991 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
269+ | 0.27 EUR |
286+ | 0.25 EUR |
TCR5AM11,LF(S |
Hersteller: TOSHIBA
TCR5AM11 LDO unregulated voltage regulators
TCR5AM11 LDO unregulated voltage regulators
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.17 EUR |
84+ | 0.86 EUR |
100+ | 0.72 EUR |
TCR5AM12,LF(S |
Hersteller: TOSHIBA
TCR5AM12 LDO unregulated voltage regulators
TCR5AM12 LDO unregulated voltage regulators
Produkt ist nicht verfügbar
TDTA114E,LM(T |
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Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
TDTA123J,LM(T |
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Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 2.2kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 2.2kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
TDTA124E,LM(T |
Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; SOT23; R1: 22kΩ; R2: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Anzahl je Verpackung: 5 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; SOT23; R1: 22kΩ; R2: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
TDTA143E,LM(T |
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Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
TDTA144E,LM(T |
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Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 48810 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1520+ | 0.047 EUR |
2170+ | 0.033 EUR |
2460+ | 0.029 EUR |
2800+ | 0.026 EUR |
2950+ | 0.024 EUR |
TDTC114E,LM(T |
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Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 7210 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1520+ | 0.047 EUR |
2170+ | 0.033 EUR |
2460+ | 0.029 EUR |
2800+ | 0.026 EUR |
2950+ | 0.024 EUR |
TDTC114Y,LM(T |
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Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7910 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1520+ | 0.047 EUR |
2160+ | 0.033 EUR |
2455+ | 0.029 EUR |
2795+ | 0.026 EUR |
2945+ | 0.024 EUR |
TDTC123J,LM(T |
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Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 2.2kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 2.2kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 5980 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1520+ | 0.047 EUR |
2170+ | 0.033 EUR |
2460+ | 0.029 EUR |
2800+ | 0.026 EUR |
2950+ | 0.024 EUR |
TDTC124E,LM(T |
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Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 8050 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1520+ | 0.047 EUR |
2170+ | 0.033 EUR |
2460+ | 0.029 EUR |
2800+ | 0.026 EUR |
2950+ | 0.024 EUR |
TDTC143E,LM(T |
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Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 7490 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1520+ | 0.047 EUR |
2170+ | 0.033 EUR |
2460+ | 0.029 EUR |
2800+ | 0.026 EUR |
2950+ | 0.024 EUR |
TDTC143Z,LM(T |
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 4.7kΩ; R2: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 3000 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 4.7kΩ; R2: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
TDTC144E,LM(T |
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Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10660 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1520+ | 0.047 EUR |
2170+ | 0.033 EUR |
2460+ | 0.029 EUR |
2800+ | 0.026 EUR |
2950+ | 0.024 EUR |
TJ15S06M3L(T6L1,NQ |
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Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; 41W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: -60V
Drain current: -15A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: -20...10V
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; 41W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: -60V
Drain current: -15A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: -20...10V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TJ30S06M3L,LXHQ(O |
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Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 68W; DPAK
Kind of package: reel; tape
Drain current: -30A
On-state resistance: 16.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: -20...10V
Mounting: SMD
Case: DPAK
Drain-source voltage: -60V
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 68W; DPAK
Kind of package: reel; tape
Drain current: -30A
On-state resistance: 16.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: -20...10V
Mounting: SMD
Case: DPAK
Drain-source voltage: -60V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TJ60S06M3L(T6L1,NQ |
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Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -60A; Idm: -120A; 100W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -60A
Pulsed drain current: -120A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: -20...10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -60A; Idm: -120A; 100W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -60A
Pulsed drain current: -120A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: -20...10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TJ9A10M3,S4Q |
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Hersteller: TOSHIBA
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -9A; 19W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9A
Power dissipation: 19W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -9A; 19W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9A
Power dissipation: 19W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
TK040N65Z,S1F(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 57A; Idm: 228A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 360W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 57A; Idm: 228A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 360W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK100A06N1,S4X(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 263A; 45W; TO220FP
Mounting: THT
Drain-source voltage: 60V
Drain current: 263A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 263A; 45W; TO220FP
Mounting: THT
Drain-source voltage: 60V
Drain current: 263A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 615 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.75 EUR |
30+ | 2.46 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
TK100E06N1,S1X(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB
Polarisation: unipolar
Power dissipation: 255W
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB
Polarisation: unipolar
Power dissipation: 255W
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK100E10N1,S1X(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 255W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 255W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 217 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.85 EUR |
28+ | 2.57 EUR |
37+ | 1.97 EUR |
39+ | 1.86 EUR |
TK10A60W,S4VX(M |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Mounting: THT
Kind of package: tube
Power dissipation: 30W
Polarisation: unipolar
Case: SC67
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 9.7A
On-state resistance: 327mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Mounting: THT
Kind of package: tube
Power dissipation: 30W
Polarisation: unipolar
Case: SC67
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 9.7A
On-state resistance: 327mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK10A60W5,S5VX(M |
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Mounting: THT
Power dissipation: 30W
Polarisation: unipolar
Case: SC67
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 9.7A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Mounting: THT
Power dissipation: 30W
Polarisation: unipolar
Case: SC67
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 9.7A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 901 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.49 EUR |
33+ | 2.23 EUR |
42+ | 1.73 EUR |
44+ | 1.64 EUR |
TK10A80W,S4X(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9.5A; 40W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9.5A
Power dissipation: 40W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9.5A; 40W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9.5A
Power dissipation: 40W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 166 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.3 EUR |
19+ | 3.88 EUR |
22+ | 3.4 EUR |
23+ | 3.22 EUR |
50+ | 3.09 EUR |
TK10E60W,S1VX(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 100W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Power dissipation: 100W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 100W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Power dissipation: 100W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK110P10PL,RQ(S2 |
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Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 160A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 160A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 160A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 160A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 94 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.07 EUR |
81+ | 0.88 EUR |
94+ | 0.76 EUR |
TK11P65W,RQ(S |
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Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DPAK
Drain-source voltage: 650V
Drain current: 11.1A
On-state resistance: 440mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DPAK
Drain-source voltage: 650V
Drain current: 11.1A
On-state resistance: 440mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK12P60W.RVQ(S |
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Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK12Q60W,S1VQ(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; Idm: 46A; 100W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 100W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; Idm: 46A; 100W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 100W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK13P25D,RQ(S |
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Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 13A; 96W; DPAK
Drain-source voltage: 250V
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 13A; 96W; DPAK
Drain-source voltage: 250V
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2800 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 1.29 EUR |
66+ | 1.09 EUR |
87+ | 0.83 EUR |
91+ | 0.79 EUR |
TK14A65W,S5X(M |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.7A; 40W; TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO220FP
Drain-source voltage: 650V
Drain current: 13.7A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.7A; 40W; TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO220FP
Drain-source voltage: 650V
Drain current: 13.7A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.82 EUR |
21+ | 3.43 EUR |
28+ | 2.59 EUR |
30+ | 2.46 EUR |
TK15J50D(F) |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 210W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 210W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 210W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 210W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 930 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.19 EUR |
25+ | 2.87 EUR |
32+ | 2.3 EUR |
33+ | 2.17 EUR |
TK160F10N1L,LQ(O |
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Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 375W
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 375W
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
5+ | 14.3 EUR |
6+ | 11.91 EUR |
15+ | 4.76 EUR |
TK16A60W,S4VX(M |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK16A60W5,S4VX(M |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 600 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 600 Stücke
Produkt ist nicht verfügbar
TK16E60W,S1VX(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 750 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 750 Stücke
Produkt ist nicht verfügbar
TK16N60W,S1VF(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK16N60W5,S1VF(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 63.2A
Power dissipation: 130W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 63.2A
Power dissipation: 130W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK18A30D,S5X(M |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 18A
Power dissipation: 45W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 18A
Power dissipation: 45W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK20A60W,S5VX(M |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 45W; TO220FP
Mounting: THT
Gate charge: 48nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO220FP
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 45W; TO220FP
Mounting: THT
Gate charge: 48nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO220FP
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4.15 EUR |
20+ | 3.72 EUR |
24+ | 3.06 EUR |
25+ | 2.89 EUR |
250+ | 2.77 EUR |
TK20G60W,RVQ(S |
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Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
TK20N60W,S1VF(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar