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74VHCT245AFT(BJ) 74VHCT245AFT(BJ) TOSHIBA 74VHCT245AFT.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver; Ch: 8; C²MOS; SMD; TSSOP20; VHCT; 4.9ns
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver
Number of channels: 8
Technology: C²MOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 4.9ns
Terminal pitch: 0.65mm
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
74VHCT32AFT(BJ) 74VHCT32AFT(BJ) TOSHIBA 74VHCT32AFT.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; C²MOS; SMD; TSSOP14; 4.5÷5.5VDC; 3.8ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: C²MOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
Delay time: 3.8ns
Terminal pitch: 0.65mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9375 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
264+ 0.27 EUR
358+ 0.2 EUR
379+ 0.19 EUR
Mindestbestellmenge: 200
74VHCT540AFT(BE) 74VHCT540AFT(BE) TOSHIBA 74VHCT540AFT.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; C²MOS; SMD; VHCT
Mounting: SMD
Terminal pitch: 0.65mm
Manufacturer series: VHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Technology: C²MOS
Kind of integrated circuit: buffer; inverting; line driver
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 8
Delay time: 5.4ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12456 Stücke:
Lieferzeit 7-14 Tag (e)
66+1.09 EUR
82+ 0.88 EUR
132+ 0.54 EUR
222+ 0.32 EUR
234+ 0.31 EUR
500+ 0.29 EUR
Mindestbestellmenge: 66
74VHCT573AFT(BJ) 74VHCT573AFT(BJ) TOSHIBA 74VHCT573AFT.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; C²MOS; 4.5÷5.5VDC; SMD; TSSOP20; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: C²MOS
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Terminal pitch: 0.65mm
Delay time: 7.7ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
74VHCT574AFT(BJ) 74VHCT574AFT(BJ) TOSHIBA 74VHCT574AFT.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; C²MOS; VHCT; SMD; TSSOP20; reel,tape
Operating temperature: -40...125°C
Mounting: SMD
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Case: TSSOP20
Trigger: rising-edge
Technology: C²MOS
Kind of integrated circuit: D flip-flop
Terminal pitch: 0.65mm
Frequency: 140MHz
Type of integrated circuit: digital
Kind of output: 3-state
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
74VHCV541FT(BJ) TOSHIBA 74VHCV541FTBJ Buffers, transceivers, drivers
Produkt ist nicht verfügbar
BAS316,H3F(T BAS316,H3F(T TOSHIBA Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD323; Ufmax: 1.25V; 230mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 1A
Power dissipation: 0.23W
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
auf Bestellung 8170 Stücke:
Lieferzeit 7-14 Tag (e)
820+0.088 EUR
1940+ 0.037 EUR
2140+ 0.033 EUR
2710+ 0.026 EUR
2860+ 0.025 EUR
12000+ 0.024 EUR
Mindestbestellmenge: 820
BAS516,H3F(T BAS516,H3F(T TOSHIBA Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD523
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BAS516,L3F(T BAS516,L3F(T TOSHIBA Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD523
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BAV70,LM(T BAV70,LM(T TOSHIBA Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 0.9pF
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.15W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2874 Stücke:
Lieferzeit 7-14 Tag (e)
379+0.19 EUR
625+ 0.11 EUR
695+ 0.1 EUR
910+ 0.079 EUR
962+ 0.074 EUR
Mindestbestellmenge: 379
CES388,L3F TOSHIBA docget.jsp?did=13102&prodName=CES388 CES388 SMD Schottky diodes
Produkt ist nicht verfügbar
CMS01(TE12L,Q,M) TOSHIBA CMS01_Nov2013.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; M-FLAT; reel,tape
Case: M-FLAT
Max. off-state voltage: 30V
Max. forward voltage: 0.37V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CMS11(TE12L,Q,M) CMS11(TE12L,Q,M) TOSHIBA CMS11.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; M-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: M-FLAT
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CMS16(TE12L,Q) CMS16(TE12L,Q) TOSHIBA CMS16.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; M-FLAT; reel,tape
Case: M-FLAT
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1100 Stücke:
Lieferzeit 7-14 Tag (e)
193+0.37 EUR
272+ 0.26 EUR
341+ 0.21 EUR
360+ 0.2 EUR
3000+ 0.19 EUR
Mindestbestellmenge: 193
CRF02(TE85L,Q,M) CRF02(TE85L,Q,M) TOSHIBA CRF02.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 800V; 500mA; 100ns; S-FLAT; Ufmax: 2.2V
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 2.2V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1137 Stücke:
Lieferzeit 7-14 Tag (e)
260+0.28 EUR
439+ 0.16 EUR
500+ 0.14 EUR
532+ 0.13 EUR
Mindestbestellmenge: 260
CRG07(TE85L,Q,M) TOSHIBA CRG07.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 700mA; S-FLAT; Ufmax: 1.1V; Ifsm: 15A
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 15A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CRS01(TE85L,Q,M) CRS01(TE85L,Q,M) TOSHIBA CRS01.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.37V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 22A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 11140 Stücke:
Lieferzeit 7-14 Tag (e)
340+0.21 EUR
500+ 0.14 EUR
570+ 0.13 EUR
610+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 340
CRS03(TE85L,Q,M) CRS03(TE85L,Q,M) TOSHIBA CRS03.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.45V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
CRS04(TE85L,Q,M) CRS04(TE85L,Q,M) TOSHIBA CRS04.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.49V
Max. forward impulse current: 20A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)
290+0.24 EUR
385+ 0.19 EUR
Mindestbestellmenge: 290
CRS05(TE85L,Q,M) CRS05(TE85L,Q,M) TOSHIBA CRS05.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.45V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10115 Stücke:
Lieferzeit 7-14 Tag (e)
215+0.34 EUR
285+ 0.25 EUR
365+ 0.2 EUR
390+ 0.18 EUR
Mindestbestellmenge: 215
CRS06(TE85L,Q,M) CRS06(TE85L,Q,M) TOSHIBA CRS06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CRS08(TE85L,Q,M) CRS08(TE85L,Q,M) TOSHIBA CRS08.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.36V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.59 EUR
100+ 0.72 EUR
115+ 0.61 EUR
310+ 0.23 EUR
Mindestbestellmenge: 45
CRS09(TE85L,Q,M) CRS09(TE85L,Q,M) TOSHIBA CRS09.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.46V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3505 Stücke:
Lieferzeit 7-14 Tag (e)
335+0.21 EUR
370+ 0.19 EUR
420+ 0.17 EUR
460+ 0.16 EUR
490+ 0.15 EUR
3000+ 0.14 EUR
Mindestbestellmenge: 335
CRS13(TE85L,Q,M) CRS13(TE85L,Q,M) TOSHIBA CRS13.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CRS14(TE85L,Q,M) CRS14(TE85L,Q,M) TOSHIBA CRS14.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3781 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
256+ 0.28 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 200
CRS15I30B(TE85L,QM CRS15I30B(TE85L,QM TOSHIBA CRS15I30B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; S-FLAT; reel,tape
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.4V
Load current: 1.5A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
455+ 0.16 EUR
485+ 0.14 EUR
3000+ 0.12 EUR
Mindestbestellmenge: 380
CRS20I40A(TE85L,QM TOSHIBA CRS20I40A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; S-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: S-FLAT
Max. forward voltage: 0.6V
Max. forward impulse current: 20A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CUS10F30,H3F CUS10F30,H3F TOSHIBA CUS10F30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CUS10S30,H3F(T CUS10S30,H3F(T TOSHIBA CUS10S30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 5A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CUS520,H3F(T CUS520,H3F(T TOSHIBA CUS520.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOD323
Max. off-state voltage: 30V
Max. load current: 0.3A
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1470 Stücke:
Lieferzeit 7-14 Tag (e)
760+0.094 EUR
1470+ 0.049 EUR
Mindestbestellmenge: 760
DF10G5M4N,LF(D DF10G5M4N,LF(D TOSHIBA Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape
Mounting: SMD
Case: DFN10
Kind of package: reel; tape
Max. off-state voltage: 3.6V
Semiconductor structure: bidirectional
Max. forward impulse current: 2A
Breakdown voltage: 5V
Leakage current: 0.1µA
Number of channels: 4
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 30W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DF2B36FU,H3F(T DF2B36FU,H3F(T TOSHIBA DF2B36FU.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 150W; 32V; 2.5A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 150W
Max. off-state voltage: 28V
Breakdown voltage: 32V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6165 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
530+ 0.14 EUR
600+ 0.12 EUR
715+ 0.1 EUR
755+ 0.095 EUR
Mindestbestellmenge: 360
DF5A3.6JE,LM(T TOSHIBA DF5A3.6JE.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT553
Semiconductor structure: common anode; unidirectional
Leakage current: 10µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.1W
Breakdown voltage: 3.6V
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DF5A5.6F(TE85L,F) DF5A5.6F(TE85L,F) TOSHIBA DF5A5.6F.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Number of channels: 4
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Breakdown voltage: 5.6V
Leakage current: 1µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2W
Semiconductor structure: common anode; unidirectional
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DF5A6.2CJE,LM DF5A6.2CJE,LM TOSHIBA DF5A6.2CJE.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6.2V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT553
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 2.5µA
Peak pulse power dissipation: 0.1W
Breakdown voltage: 6.2V
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
EMPP008Z
+1
 		EMPP008Z TOSHIBA Category: One Phase Inverters
Description: EMC cover
Type of installation accessories: EMC cover
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
GT15J341,S4X(S GT15J341,S4X(S TOSHIBA GT15J341.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 30W; TO220FP
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 15A
Pulsed collector current: 60A
Turn-on time: 180ns
Turn-off time: 320ns
Type of transistor: IGBT
Power dissipation: 30W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 253 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.29 EUR
35+ 2.04 EUR
43+ 1.69 EUR
45+ 1.6 EUR
Mindestbestellmenge: 32
GT20J341,S4X(S GT20J341,S4X(S TOSHIBA GT20J341.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 11A
Power dissipation: 45W
Case: TO220FP
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 0.2µs
Turn-off time: 370ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
GT30J121(Q) GT30J121(Q) TOSHIBA GT30J121.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 240ns
Turn-off time: 430ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.28 EUR
19+ 3.86 EUR
24+ 3.02 EUR
25+ 2.86 EUR
Mindestbestellmenge: 17
GT40QR21(STA1,E,D GT40QR21(STA1,E,D TOSHIBA GT40QR21.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 35A
Pulsed collector current: 80A
Turn-on time: 0.3µs
Turn-off time: 0.6µs
Type of transistor: IGBT
Case: TO3PN
Power dissipation: 230W
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 411 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.56 EUR
18+ 4.1 EUR
23+ 3.15 EUR
25+ 2.97 EUR
Mindestbestellmenge: 16
GT40WR21,Q(O GT40WR21,Q(O TOSHIBA GT40WR21.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.62 EUR
7+ 11.11 EUR
Mindestbestellmenge: 5
GT50JR21(STA1,E,S) GT50JR21(STA1,E,S) TOSHIBA GT50JR21.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN
Mounting: THT
Type of transistor: IGBT
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Case: TO3PN
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 49A
Pulsed collector current: 100A
Turn-on time: 430ns
Turn-off time: 720ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
GT50JR22(STA1,E,S) GT50JR22(STA1,E,S) TOSHIBA GT50JR22.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 115W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 115W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Kind of package: tube
Turn-on time: 250ns
Turn-off time: 330ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 240 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.43 EUR
17+ 4.22 EUR
18+ 4 EUR
25+ 3.96 EUR
100+ 3.85 EUR
Mindestbestellmenge: 14
HN1B04FE-GR,LF(T HN1B04FE-GR,LF(T TOSHIBA HN1B04FE.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.1W
Case: SOT563F
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Anzahl je Verpackung: 20 Stücke
auf Bestellung 27800 Stücke:
Lieferzeit 7-14 Tag (e)
1100+0.066 EUR
1220+ 0.059 EUR
1520+ 0.047 EUR
1620+ 0.044 EUR
Mindestbestellmenge: 1100
HN1B04FU-GR(L,F,T) HN1B04FU-GR(L,F,T) TOSHIBA HN1B04FU.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC88
Current gain: 120...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1480 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
870+ 0.082 EUR
960+ 0.075 EUR
1255+ 0.057 EUR
1330+ 0.054 EUR
Mindestbestellmenge: 380
HN2S01FU(TE85L,F) TOSHIBA HN2S01FU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 15V; 0.1A; US6; reel,tape; 200mW
Mounting: SMD
Case: US6
Kind of package: reel; tape
Power dissipation: 0.2W
Type of diode: Schottky switching
Max. off-state voltage: 15V
Max. load current: 0.2A
Max. forward voltage: 0.5V
Load current: 0.1A
Semiconductor structure: triple independent
Max. forward impulse current: 1A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
JDH3D01FV(TPL3) TOSHIBA JDH3D01FV SMD Schottky diodes
Produkt ist nicht verfügbar
RFM04U6P(TE12L,F) TOSHIBA RFM04U6P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 16V; 2A; 7W; PW-Mini; Pout: 4.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 16V
Drain current: 2A
Power dissipation: 7W
Case: PW-Mini
Gate-source voltage: ±3V
Kind of package: reel; tape
Frequency: 470MHz
Kind of channel: depleted
Output power: 4.3W
Electrical mounting: SMT
Open-loop gain: 13.3dB
Efficiency: 70%
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
RN1401,LF(T RN1401,LF(T TOSHIBA RN1401_06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Anzahl je Verpackung: 20 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)
1400+0.051 EUR
1500+ 0.047 EUR
1720+ 0.041 EUR
12000+ 0.025 EUR
Mindestbestellmenge: 1400
RN1402(TE85L,F) RN1402(TE85L,F) TOSHIBA RN1401_06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 50
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RN1406(TE85L,F)
+1
 		RN1406(TE85L,F) TOSHIBA RN1406.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 510 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
510+ 0.14 EUR
850+ 0.084 EUR
Mindestbestellmenge: 380
RN1411(TE85L,F) RN1411(TE85L,F) TOSHIBA RN1410_11.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1585 Stücke:
Lieferzeit 7-14 Tag (e)
450+0.16 EUR
1405+ 0.051 EUR
1585+ 0.046 EUR
Mindestbestellmenge: 450
RN1427(TE85L,F) RN1427(TE85L,F) TOSHIBA RN1421_27.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 300MHz
Anzahl je Verpackung: 12000 Stücke
Produkt ist nicht verfügbar
RN1604(TE85L,F) RN1604(TE85L,F) TOSHIBA RN1601_06.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ
Mounting: SMD
Case: SM6
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)
355+0.2 EUR
570+ 0.13 EUR
645+ 0.11 EUR
740+ 0.097 EUR
785+ 0.092 EUR
Mindestbestellmenge: 355
RN1910FE,LF(CT TOSHIBA RN1910FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1910FE Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ
Case: ES6
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 120...700
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.1W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RN2405,LXGF(T RN2405,LXGF(T TOSHIBA RN2410_11.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 30000 Stücke
Produkt ist nicht verfügbar
RN2410(TE85L,F) RN2410(TE85L,F) TOSHIBA RN2410_11.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2630 Stücke:
Lieferzeit 7-14 Tag (e)
450+0.16 EUR
1375+ 0.052 EUR
1560+ 0.046 EUR
1670+ 0.043 EUR
Mindestbestellmenge: 450
RN4982FE,LF(CT TOSHIBA docget.jsp?did=19043&prodName=RN4982FE RN4982FE Complementary transistors
Produkt ist nicht verfügbar
SSM3J16FS(TE85L,F) SSM3J16FS(TE85L,F) TOSHIBA SSM3J16FS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -100mA
On-state resistance: 45Ω
Type of transistor: P-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1861 Stücke:
Lieferzeit 7-14 Tag (e)
325+0.22 EUR
560+ 0.13 EUR
625+ 0.11 EUR
685+ 0.1 EUR
725+ 0.099 EUR
3000+ 0.096 EUR
Mindestbestellmenge: 325
SSM3J327R,LF(B
+1
 		SSM3J327R,LF(B TOSHIBA SSM3J327R.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
74VHCT245AFT(BJ) 74VHCT245AFT.pdf
74VHCT245AFT(BJ)
Hersteller: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver; Ch: 8; C²MOS; SMD; TSSOP20; VHCT; 4.9ns
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver
Number of channels: 8
Technology: C²MOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 4.9ns
Terminal pitch: 0.65mm
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
74VHCT32AFT(BJ) 74VHCT32AFT.pdf
74VHCT32AFT(BJ)
Hersteller: TOSHIBA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; C²MOS; SMD; TSSOP14; 4.5÷5.5VDC; 3.8ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: C²MOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
Delay time: 3.8ns
Terminal pitch: 0.65mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9375 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
264+ 0.27 EUR
358+ 0.2 EUR
379+ 0.19 EUR
Mindestbestellmenge: 200
74VHCT540AFT(BE) 74VHCT540AFT.pdf
74VHCT540AFT(BE)
Hersteller: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; C²MOS; SMD; VHCT
Mounting: SMD
Terminal pitch: 0.65mm
Manufacturer series: VHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Technology: C²MOS
Kind of integrated circuit: buffer; inverting; line driver
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 8
Delay time: 5.4ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12456 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
82+ 0.88 EUR
132+ 0.54 EUR
222+ 0.32 EUR
234+ 0.31 EUR
500+ 0.29 EUR
Mindestbestellmenge: 66
74VHCT573AFT(BJ) 74VHCT573AFT.pdf
74VHCT573AFT(BJ)
Hersteller: TOSHIBA
Category: Latches
Description: IC: digital; D latch; Ch: 8; C²MOS; 4.5÷5.5VDC; SMD; TSSOP20; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: C²MOS
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Terminal pitch: 0.65mm
Delay time: 7.7ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
74VHCT574AFT(BJ) 74VHCT574AFT.pdf
74VHCT574AFT(BJ)
Hersteller: TOSHIBA
Category: Flip-Flops
Description: IC: digital; D flip-flop; C²MOS; VHCT; SMD; TSSOP20; reel,tape
Operating temperature: -40...125°C
Mounting: SMD
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Case: TSSOP20
Trigger: rising-edge
Technology: C²MOS
Kind of integrated circuit: D flip-flop
Terminal pitch: 0.65mm
Frequency: 140MHz
Type of integrated circuit: digital
Kind of output: 3-state
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
74VHCV541FT(BJ)
Hersteller: TOSHIBA
74VHCV541FTBJ Buffers, transceivers, drivers
Produkt ist nicht verfügbar
BAS316,H3F(T
BAS316,H3F(T
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD323; Ufmax: 1.25V; 230mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 1A
Power dissipation: 0.23W
Kind of package: reel; tape
Anzahl je Verpackung: 10 Stücke
auf Bestellung 8170 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
820+0.088 EUR
1940+ 0.037 EUR
2140+ 0.033 EUR
2710+ 0.026 EUR
2860+ 0.025 EUR
12000+ 0.024 EUR
Mindestbestellmenge: 820
BAS516,H3F(T
BAS516,H3F(T
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD523
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BAS516,L3F(T
BAS516,L3F(T
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD523
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BAV70,LM(T
BAV70,LM(T
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 0.9pF
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.15W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2874 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
379+0.19 EUR
625+ 0.11 EUR
695+ 0.1 EUR
910+ 0.079 EUR
962+ 0.074 EUR
Mindestbestellmenge: 379
CES388,L3F docget.jsp?did=13102&prodName=CES388
Hersteller: TOSHIBA
CES388 SMD Schottky diodes
Produkt ist nicht verfügbar
CMS01(TE12L,Q,M) CMS01_Nov2013.pdf
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; M-FLAT; reel,tape
Case: M-FLAT
Max. off-state voltage: 30V
Max. forward voltage: 0.37V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CMS11(TE12L,Q,M) CMS11.pdf
CMS11(TE12L,Q,M)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; M-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: M-FLAT
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CMS16(TE12L,Q) CMS16.pdf
CMS16(TE12L,Q)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; M-FLAT; reel,tape
Case: M-FLAT
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Max. forward voltage: 0.55V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
193+0.37 EUR
272+ 0.26 EUR
341+ 0.21 EUR
360+ 0.2 EUR
3000+ 0.19 EUR
Mindestbestellmenge: 193
CRF02(TE85L,Q,M) CRF02.pdf
CRF02(TE85L,Q,M)
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 800V; 500mA; 100ns; S-FLAT; Ufmax: 2.2V
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 2.2V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1137 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
260+0.28 EUR
439+ 0.16 EUR
500+ 0.14 EUR
532+ 0.13 EUR
Mindestbestellmenge: 260
CRG07(TE85L,Q,M) CRG07.pdf
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 700mA; S-FLAT; Ufmax: 1.1V; Ifsm: 15A
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 15A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CRS01(TE85L,Q,M) CRS01.pdf
CRS01(TE85L,Q,M)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.37V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 22A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 11140 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
340+0.21 EUR
500+ 0.14 EUR
570+ 0.13 EUR
610+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 340
CRS03(TE85L,Q,M) CRS03.pdf
CRS03(TE85L,Q,M)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.45V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
Anzahl je Verpackung: 6000 Stücke
Produkt ist nicht verfügbar
CRS04(TE85L,Q,M) CRS04.pdf
CRS04(TE85L,Q,M)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.49V
Max. forward impulse current: 20A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
290+0.24 EUR
385+ 0.19 EUR
Mindestbestellmenge: 290
CRS05(TE85L,Q,M) CRS05.pdf
CRS05(TE85L,Q,M)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.45V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10115 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
215+0.34 EUR
285+ 0.25 EUR
365+ 0.2 EUR
390+ 0.18 EUR
Mindestbestellmenge: 215
CRS06(TE85L,Q,M) CRS06.pdf
CRS06(TE85L,Q,M)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CRS08(TE85L,Q,M) CRS08.pdf
CRS08(TE85L,Q,M)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.36V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.59 EUR
100+ 0.72 EUR
115+ 0.61 EUR
310+ 0.23 EUR
Mindestbestellmenge: 45
CRS09(TE85L,Q,M) CRS09.pdf
CRS09(TE85L,Q,M)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.46V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3505 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
370+ 0.19 EUR
420+ 0.17 EUR
460+ 0.16 EUR
490+ 0.15 EUR
3000+ 0.14 EUR
Mindestbestellmenge: 335
CRS13(TE85L,Q,M) CRS13.pdf
CRS13(TE85L,Q,M)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CRS14(TE85L,Q,M) CRS14.pdf
CRS14(TE85L,Q,M)
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3781 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
256+ 0.28 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 200
CRS15I30B(TE85L,QM CRS15I30B.pdf
CRS15I30B(TE85L,QM
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; S-FLAT; reel,tape
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.4V
Load current: 1.5A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
455+ 0.16 EUR
485+ 0.14 EUR
3000+ 0.12 EUR
Mindestbestellmenge: 380
CRS20I40A(TE85L,QM CRS20I40A.pdf
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; S-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: S-FLAT
Max. forward voltage: 0.6V
Max. forward impulse current: 20A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CUS10F30,H3F CUS10F30.pdf
CUS10F30,H3F
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CUS10S30,H3F(T CUS10S30.pdf
CUS10S30,H3F(T
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 5A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
CUS520,H3F(T CUS520.pdf
CUS520,H3F(T
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOD323
Max. off-state voltage: 30V
Max. load current: 0.3A
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1470 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
760+0.094 EUR
1470+ 0.049 EUR
Mindestbestellmenge: 760
DF10G5M4N,LF(D
DF10G5M4N,LF(D
Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape
Mounting: SMD
Case: DFN10
Kind of package: reel; tape
Max. off-state voltage: 3.6V
Semiconductor structure: bidirectional
Max. forward impulse current: 2A
Breakdown voltage: 5V
Leakage current: 0.1µA
Number of channels: 4
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 30W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DF2B36FU,H3F(T DF2B36FU.pdf
DF2B36FU,H3F(T
Hersteller: TOSHIBA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 150W; 32V; 2.5A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 150W
Max. off-state voltage: 28V
Breakdown voltage: 32V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6165 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
530+ 0.14 EUR
600+ 0.12 EUR
715+ 0.1 EUR
755+ 0.095 EUR
Mindestbestellmenge: 360
DF5A3.6JE,LM(T DF5A3.6JE.pdf
Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT553
Semiconductor structure: common anode; unidirectional
Leakage current: 10µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.1W
Breakdown voltage: 3.6V
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DF5A5.6F(TE85L,F) DF5A5.6F.pdf
DF5A5.6F(TE85L,F)
Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Number of channels: 4
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Breakdown voltage: 5.6V
Leakage current: 1µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2W
Semiconductor structure: common anode; unidirectional
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DF5A6.2CJE,LM DF5A6.2CJE.pdf
DF5A6.2CJE,LM
Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.2V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT553
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 2.5µA
Peak pulse power dissipation: 0.1W
Breakdown voltage: 6.2V
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
EMPP008Z
EMPP008Z
+1
Hersteller: TOSHIBA
Category: One Phase Inverters
Description: EMC cover
Type of installation accessories: EMC cover
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
GT15J341,S4X(S GT15J341.pdf
GT15J341,S4X(S
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 30W; TO220FP
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 15A
Pulsed collector current: 60A
Turn-on time: 180ns
Turn-off time: 320ns
Type of transistor: IGBT
Power dissipation: 30W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 253 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.29 EUR
35+ 2.04 EUR
43+ 1.69 EUR
45+ 1.6 EUR
Mindestbestellmenge: 32
GT20J341,S4X(S GT20J341.pdf
GT20J341,S4X(S
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 11A
Power dissipation: 45W
Case: TO220FP
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 0.2µs
Turn-off time: 370ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
GT30J121(Q) GT30J121.pdf
GT30J121(Q)
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 240ns
Turn-off time: 430ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.28 EUR
19+ 3.86 EUR
24+ 3.02 EUR
25+ 2.86 EUR
Mindestbestellmenge: 17
GT40QR21(STA1,E,D GT40QR21.pdf
GT40QR21(STA1,E,D
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 35A
Pulsed collector current: 80A
Turn-on time: 0.3µs
Turn-off time: 0.6µs
Type of transistor: IGBT
Case: TO3PN
Power dissipation: 230W
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 411 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.56 EUR
18+ 4.1 EUR
23+ 3.15 EUR
25+ 2.97 EUR
Mindestbestellmenge: 16
GT40WR21,Q(O GT40WR21.pdf
GT40WR21,Q(O
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.62 EUR
7+ 11.11 EUR
Mindestbestellmenge: 5
GT50JR21(STA1,E,S) GT50JR21.pdf
GT50JR21(STA1,E,S)
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN
Mounting: THT
Type of transistor: IGBT
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Case: TO3PN
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 49A
Pulsed collector current: 100A
Turn-on time: 430ns
Turn-off time: 720ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
GT50JR22(STA1,E,S) GT50JR22.pdf
GT50JR22(STA1,E,S)
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 115W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 115W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Kind of package: tube
Turn-on time: 250ns
Turn-off time: 330ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 240 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
14+5.43 EUR
17+ 4.22 EUR
18+ 4 EUR
25+ 3.96 EUR
100+ 3.85 EUR
Mindestbestellmenge: 14
HN1B04FE-GR,LF(T HN1B04FE.pdf
HN1B04FE-GR,LF(T
Hersteller: TOSHIBA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.1W
Case: SOT563F
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Anzahl je Verpackung: 20 Stücke
auf Bestellung 27800 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1100+0.066 EUR
1220+ 0.059 EUR
1520+ 0.047 EUR
1620+ 0.044 EUR
Mindestbestellmenge: 1100
HN1B04FU-GR(L,F,T) HN1B04FU.pdf
HN1B04FU-GR(L,F,T)
Hersteller: TOSHIBA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC88
Current gain: 120...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1480 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
870+ 0.082 EUR
960+ 0.075 EUR
1255+ 0.057 EUR
1330+ 0.054 EUR
Mindestbestellmenge: 380
HN2S01FU(TE85L,F) HN2S01FU.pdf
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 15V; 0.1A; US6; reel,tape; 200mW
Mounting: SMD
Case: US6
Kind of package: reel; tape
Power dissipation: 0.2W
Type of diode: Schottky switching
Max. off-state voltage: 15V
Max. load current: 0.2A
Max. forward voltage: 0.5V
Load current: 0.1A
Semiconductor structure: triple independent
Max. forward impulse current: 1A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
JDH3D01FV(TPL3)
Hersteller: TOSHIBA
JDH3D01FV SMD Schottky diodes
Produkt ist nicht verfügbar
RFM04U6P(TE12L,F) RFM04U6P.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 16V; 2A; 7W; PW-Mini; Pout: 4.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 16V
Drain current: 2A
Power dissipation: 7W
Case: PW-Mini
Gate-source voltage: ±3V
Kind of package: reel; tape
Frequency: 470MHz
Kind of channel: depleted
Output power: 4.3W
Electrical mounting: SMT
Open-loop gain: 13.3dB
Efficiency: 70%
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
RN1401,LF(T RN1401_06.pdf
RN1401,LF(T
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Anzahl je Verpackung: 20 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1400+0.051 EUR
1500+ 0.047 EUR
1720+ 0.041 EUR
12000+ 0.025 EUR
Mindestbestellmenge: 1400
RN1402(TE85L,F) RN1401_06.pdf
RN1402(TE85L,F)
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 50
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RN1406(TE85L,F) RN1406.pdf
RN1406(TE85L,F)
+1
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 510 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
510+ 0.14 EUR
850+ 0.084 EUR
Mindestbestellmenge: 380
RN1411(TE85L,F) RN1410_11.pdf
RN1411(TE85L,F)
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1585 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
450+0.16 EUR
1405+ 0.051 EUR
1585+ 0.046 EUR
Mindestbestellmenge: 450
RN1427(TE85L,F) RN1421_27.pdf
RN1427(TE85L,F)
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 300MHz
Anzahl je Verpackung: 12000 Stücke
Produkt ist nicht verfügbar
RN1604(TE85L,F) RN1601_06.pdf
RN1604(TE85L,F)
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ
Mounting: SMD
Case: SM6
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
355+0.2 EUR
570+ 0.13 EUR
645+ 0.11 EUR
740+ 0.097 EUR
785+ 0.092 EUR
Mindestbestellmenge: 355
RN1910FE,LF(CT RN1910FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1910FE
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ
Case: ES6
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 120...700
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.1W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RN2405,LXGF(T RN2410_11.pdf
RN2405,LXGF(T
Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 30000 Stücke
Produkt ist nicht verfügbar
RN2410(TE85L,F) RN2410_11.pdf
RN2410(TE85L,F)
Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Frequency: 250MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2630 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
450+0.16 EUR
1375+ 0.052 EUR
1560+ 0.046 EUR
1670+ 0.043 EUR
Mindestbestellmenge: 450
RN4982FE,LF(CT docget.jsp?did=19043&prodName=RN4982FE
Hersteller: TOSHIBA
RN4982FE Complementary transistors
Produkt ist nicht verfügbar
SSM3J16FS(TE85L,F) SSM3J16FS.pdf
SSM3J16FS(TE85L,F)
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -100mA
On-state resistance: 45Ω
Type of transistor: P-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1861 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
325+0.22 EUR
560+ 0.13 EUR
625+ 0.11 EUR
685+ 0.1 EUR
725+ 0.099 EUR
3000+ 0.096 EUR
Mindestbestellmenge: 325
SSM3J327R,LF(B SSM3J327R.pdf
SSM3J327R,LF(B
+1
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
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