auf Bestellung 5555 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 0.44 EUR |
| 10+ | 0.32 EUR |
| 100+ | 0.12 EUR |
| 1000+ | 0.084 EUR |
| 4000+ | 0.081 EUR |
| 8000+ | 0.056 EUR |
| 24000+ | 0.053 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1910FE,LF(CT Toshiba
Description: TRANS 2NPN PREBIAS 0.1W ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: ES6.
Weitere Produktangebote RN1910FE,LF(CT nach Preis ab 0.073 EUR bis 0.44 EUR
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RN1910FE,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS 2NPN PREBIAS 0.1W ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: ES6 |
auf Bestellung 4750 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1910FE,LF(CT | Hersteller : Toshiba |
Transistor Silicon NPN Epitaxial Type (PCT process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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| RN1910FE,LF(CT | Hersteller : TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ Case: ES6 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 120...700 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.1W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Mounting: SMD Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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RN1910FE,LF(CT | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: ES6 |
Produkt ist nicht verfügbar |
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| RN1910FE,LF(CT | Hersteller : TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ Case: ES6 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 120...700 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.1W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Mounting: SMD |
Produkt ist nicht verfügbar |