Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TK31E60W,S1VX(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30.8A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TK30E06N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB Mounting: THT Drain-source voltage: 60V Drain current: 30A On-state resistance: 12.2mΩ Type of transistor: N-MOSFET Power dissipation: 53W Polarisation: unipolar Kind of package: tube Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220AB |
Produkt ist nicht verfügbar |
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TK32E12N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 32A Power dissipation: 98W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13.8mΩ Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TK35E08N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 55A Power dissipation: 72W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
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DF5A3.6JE,LM(T | TOSHIBA |
![]() Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553 Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOT553 Semiconductor structure: common anode; unidirectional Leakage current: 10µA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.1W Breakdown voltage: 3.6V Number of channels: 4 |
Produkt ist nicht verfügbar |
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TK31V60W5,LVQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm Case: DFN Mounting: SMD Dimensions: 8x8mm Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 30.8A On-state resistance: 109mΩ Type of transistor: N-MOSFET Power dissipation: 240W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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TLP383(GRH-TPL.E(T | TOSHIBA |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 150-300%@5mA Collector-emitter voltage: 80V Case: SO6L Turn-on time: 3µs Turn-off time: 3µs |
Produkt ist nicht verfügbar |
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TK18A30D,S5X(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 18A Power dissipation: 45W Case: SC67 Gate-source voltage: ±20V On-state resistance: 139mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TLP5832(D4-TP.E(O | TOSHIBA |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO8L Turn-on time: 15ns Turn-off time: 8ns Slew rate: 25kV/μs |
Produkt ist nicht verfügbar |
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TLP5832(D4.E(O | TOSHIBA |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO8L Turn-on time: 15ns Turn-off time: 8ns Slew rate: 25kV/μs |
Produkt ist nicht verfügbar |
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CMS11(TE12L,Q,M) | TOSHIBA |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 2A; M-FLAT; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: M-FLAT Max. forward voltage: 0.55V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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74LCX157FT(AJ) | TOSHIBA |
![]() Description: IC: digital; multiplexer; SMD; TSSOP16; LCX; 1.65÷3.6VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: multiplexer Case: TSSOP16 Supply voltage: 1.65...3.6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Manufacturer series: LCX Terminal pitch: 0.65mm Delay time: 6.5ns |
auf Bestellung 405 Stücke: Lieferzeit 14-21 Tag (e) |
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TK13A60D(STA4,Q,M) | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TB67S508FTG(Z,EL) | TOSHIBA |
![]() Description: IC: driver; 2-phase motor controller; VQFN36; 2.8A; 40V; 10÷35VDC Type of integrated circuit: driver Kind of integrated circuit: 2-phase motor controller Case: VQFN36 Output current: 2.8A Output voltage: 40V Supply voltage: 10...35V DC Mounting: SMD Operating temperature: -20...85°C |
Produkt ist nicht verfügbar |
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TLP383(E(T | TOSHIBA |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Collector-emitter voltage: 80V Case: SO6L Turn-on time: 3µs Turn-off time: 3µs |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
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TK31E60W,S1VX(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK30E06N1,S1X(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB
Mounting: THT
Drain-source voltage: 60V
Drain current: 30A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB
Mounting: THT
Drain-source voltage: 60V
Drain current: 30A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Produkt ist nicht verfügbar
TK32E12N1,S1X(S |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 32A
Power dissipation: 98W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 32A
Power dissipation: 98W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK35E08N1,S1X(S |
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 72W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 72W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 1.23 EUR |
72+ | 1.01 EUR |
82+ | 0.88 EUR |
92+ | 0.78 EUR |
97+ | 0.74 EUR |
DF5A3.6JE,LM(T |
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Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT553
Semiconductor structure: common anode; unidirectional
Leakage current: 10µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.1W
Breakdown voltage: 3.6V
Number of channels: 4
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT553
Semiconductor structure: common anode; unidirectional
Leakage current: 10µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.1W
Breakdown voltage: 3.6V
Number of channels: 4
Produkt ist nicht verfügbar
TK31V60W5,LVQ(S |
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Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm
Case: DFN
Mounting: SMD
Dimensions: 8x8mm
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 30.8A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Power dissipation: 240W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm
Case: DFN
Mounting: SMD
Dimensions: 8x8mm
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 30.8A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Power dissipation: 240W
Polarisation: unipolar
Produkt ist nicht verfügbar
TLP383(GRH-TPL.E(T |
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Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 150-300%@5mA
Collector-emitter voltage: 80V
Case: SO6L
Turn-on time: 3µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 150-300%@5mA
Collector-emitter voltage: 80V
Case: SO6L
Turn-on time: 3µs
Turn-off time: 3µs
Produkt ist nicht verfügbar
TK18A30D,S5X(M |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 18A
Power dissipation: 45W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 18A
Power dissipation: 45W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
TLP5832(D4-TP.E(O |
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Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO8L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO8L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Produkt ist nicht verfügbar
TLP5832(D4.E(O |
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Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO8L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO8L; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO8L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Produkt ist nicht verfügbar
CMS11(TE12L,Q,M) |
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Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; M-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: M-FLAT
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; M-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: M-FLAT
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
74LCX157FT(AJ) |
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Hersteller: TOSHIBA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; SMD; TSSOP16; LCX; 1.65÷3.6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Case: TSSOP16
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Manufacturer series: LCX
Terminal pitch: 0.65mm
Delay time: 6.5ns
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; SMD; TSSOP16; LCX; 1.65÷3.6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Case: TSSOP16
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Manufacturer series: LCX
Terminal pitch: 0.65mm
Delay time: 6.5ns
auf Bestellung 405 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
228+ | 0.31 EUR |
274+ | 0.26 EUR |
293+ | 0.24 EUR |
370+ | 0.19 EUR |
392+ | 0.18 EUR |
TK13A60D(STA4,Q,M) |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
TB67S508FTG(Z,EL) |
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Hersteller: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; 2-phase motor controller; VQFN36; 2.8A; 40V; 10÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller
Case: VQFN36
Output current: 2.8A
Output voltage: 40V
Supply voltage: 10...35V DC
Mounting: SMD
Operating temperature: -20...85°C
Category: Motor and PWM drivers
Description: IC: driver; 2-phase motor controller; VQFN36; 2.8A; 40V; 10÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller
Case: VQFN36
Output current: 2.8A
Output voltage: 40V
Supply voltage: 10...35V DC
Mounting: SMD
Operating temperature: -20...85°C
Produkt ist nicht verfügbar
TLP383(E(T |
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Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 80V
Case: SO6L
Turn-on time: 3µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 80V
Case: SO6L
Turn-on time: 3µs
Turn-off time: 3µs
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
132+ | 0.54 EUR |
188+ | 0.38 EUR |
275+ | 0.26 EUR |