Produkte > TOSHIBA > Alle Produkte des Herstellers TOSHIBA (49535) > Seite 822 nach 826

Wählen Sie Seite:   [  << Vorherige Seite ]  1 82 164 246 328 410 492 574 656 738 817 818 819 820 821 822 823 824 825 826  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
1SS300(TE85L,F) 1SS300(TE85L,F) TOSHIBA 1SS300.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 4pF
Max. forward impulse current: 2A
Produkt ist nicht verfügbar
1SS307E,L3F(T 1SS307E,L3F(T TOSHIBA 1SS307E.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; SOD523; Ufmax: 1.3V; Ifsm: 1A
Power dissipation: 0.15W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.3V
Load current: 0.1A
Capacitance: 6pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
1SS370(TE85L,F) 1SS370(TE85L,F) TOSHIBA 1SS370.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT323; Ufmax: 1.2V; 100mW
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Features of semiconductor devices: fast switching
Reverse recovery time: 60ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 2A
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
1SS381(TPH3,F) 1SS381(TPH3,F) TOSHIBA Category: Diodes - others
Description: Diode: switching; 30V; 100mA; SOD523; single diode; Ufmax: 0.85V
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 30V
Features of semiconductor devices: band-switching; RF
Type of diode: switching
Max. forward voltage: 0.85V
Load current: 0.1A
Capacitance: 0.7pF
Produkt ist nicht verfügbar
1SS387,L3F(T 1SS387,L3F(T TOSHIBA 1SS387.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOD523; Ufmax: 1.2V; Ifsm: 1A
Power dissipation: 0.15W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 1A
auf Bestellung 46970 Stücke:
Lieferzeit 14-21 Tag (e)
760+0.094 EUR
1950+ 0.037 EUR
2160+ 0.033 EUR
2720+ 0.026 EUR
2875+ 0.025 EUR
Mindestbestellmenge: 760
1SS387CT,L3F(T 1SS387CT,L3F(T TOSHIBA 1SS387CT.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 1.6ns; SOD882; Ufmax: 1.2V; 150mW
Power dissipation: 0.15W
Case: SOD882
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 1.6ns
Max. load current: 0.2A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 0.5pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
2SC2713-BL(TE85L,F 2SC2713-BL(TE85L,F TOSHIBA Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59
Frequency: 100MHz
Collector-emitter voltage: 120V
Current gain: 350...700
Collector current: 0.1A
Type of transistor: NPN
auf Bestellung 2370 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.12 EUR
670+ 0.11 EUR
870+ 0.083 EUR
910+ 0.079 EUR
Mindestbestellmenge: 600
2SC2713-GR,LF(T 2SC2713-GR,LF(T TOSHIBA 2SC2713.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59
Frequency: 100MHz
Collector-emitter voltage: 120V
Current gain: 200...400
Collector current: 0.1A
Type of transistor: NPN
auf Bestellung 12880 Stücke:
Lieferzeit 14-21 Tag (e)
510+0.14 EUR
800+ 0.09 EUR
970+ 0.074 EUR
1030+ 0.07 EUR
3000+ 0.067 EUR
Mindestbestellmenge: 510
74LCX08FT(AE) 74LCX08FT(AE) TOSHIBA 74LCX08FT.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 1.65÷3.6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 6.5ns
Family: LCX
Terminal pitch: 0.65mm
Produkt ist nicht verfügbar
TLP104(E(T TLP104(E(T TOSHIBA TLP104.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; 3.75kV; 1Mbps; SO6; 15kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 3.75kV
Transfer rate: 1Mbps
Case: SO6
Slew rate: 15kV/μs
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
59+ 1.22 EUR
74+ 0.97 EUR
75+ 0.96 EUR
Mindestbestellmenge: 53
TLP104(TPL.E(T TOSHIBA TLP104.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Produkt ist nicht verfügbar
TLP104(TPR.E(T TOSHIBA TLP104.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Produkt ist nicht verfügbar
TLP104(V4-TPL.E(T TOSHIBA TLP104.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Produkt ist nicht verfügbar
GT40WR21,Q(O GT40WR21,Q(O TOSHIBA GT40WR21.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.62 EUR
7+ 11.11 EUR
Mindestbestellmenge: 5
TPHR9003NL TPHR9003NL TOSHIBA TPHR9003NL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
23+ 3.2 EUR
28+ 2.63 EUR
29+ 2.49 EUR
Mindestbestellmenge: 20
CUS520,H3F(T CUS520,H3F(T TOSHIBA CUS520.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOD323
Max. off-state voltage: 30V
Max. load current: 0.3A
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
auf Bestellung 1470 Stücke:
Lieferzeit 14-21 Tag (e)
760+0.094 EUR
1470+ 0.049 EUR
Mindestbestellmenge: 760
DF5A5.6F(TE85L,F) DF5A5.6F(TE85L,F) TOSHIBA DF5A5.6F.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Number of channels: 4
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Breakdown voltage: 5.6V
Leakage current: 1µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2W
Semiconductor structure: common anode; unidirectional
Produkt ist nicht verfügbar
TLP5754H(D4TP4.E(T TOSHIBA TLP5754H.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Produkt ist nicht verfügbar
TLP5754H(TP.E(T TOSHIBA TLP5754H.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Produkt ist nicht verfügbar
TLX9185A(TEEGBTF(O TOSHIBA TLX9185A.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Collector-emitter voltage: 80V
Case: SO6
Turn-on time: 5µs
Turn-off time: 5µs
Output voltage: 6V
Produkt ist nicht verfügbar
TK34E10N1,S1X(S TK34E10N1,S1X(S TOSHIBA TK34E10N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 812 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
60+ 1.2 EUR
68+ 1.06 EUR
70+ 1.03 EUR
74+ 0.97 EUR
75+ 0.96 EUR
Mindestbestellmenge: 54
SSM6K403TU,LF(T SSM6K403TU,LF(T TOSHIBA SSM6K403TU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
177+0.4 EUR
264+ 0.27 EUR
280+ 0.26 EUR
Mindestbestellmenge: 177
SSM3K72KCT,L3F(T TOSHIBA SSM3K72KCT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
SSM3J328R,LF(T SSM3J328R,LF(T TOSHIBA SSM3J328R.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
SSM3J334R,LF(T SSM3J334R,LF(T TOSHIBA SSM3J334R.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2310 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
455+ 0.16 EUR
520+ 0.14 EUR
550+ 0.13 EUR
585+ 0.12 EUR
Mindestbestellmenge: 380
SSM3K341R,LF(T
+1
 		SSM3K341R,LF(T TOSHIBA SSM3K341R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5178 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
158+ 0.45 EUR
180+ 0.4 EUR
207+ 0.35 EUR
219+ 0.33 EUR
Mindestbestellmenge: 76
SSM3K36FS,LF(T
+1
 		SSM3K36FS,LF(T TOSHIBA SSM3K36FS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Mounting: SMD
Case: SSM
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1.52Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 1A
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
SSM6J502NU,LF(T SSM6J502NU,LF(T TOSHIBA SSM6J502NU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 24.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
SSM6J503NU,LF(T SSM6J503NU,LF(T TOSHIBA SSM6J503NU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
SSM6K504NU,LF(T SSM6K504NU,LF(T TOSHIBA SSM6K504NU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 1678 Stücke:
Lieferzeit 14-21 Tag (e)
355+0.2 EUR
425+ 0.17 EUR
470+ 0.15 EUR
510+ 0.14 EUR
Mindestbestellmenge: 355
SSM3K35MFV,L3F(T
+1
 		SSM3K35MFV,L3F(T TOSHIBA SSM3K35MFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
SSM3K7002KFU,LF(T SSM3K7002KFU,LF(T TOSHIBA SSM3K7002KFU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 38125 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.099 EUR
970+ 0.074 EUR
1075+ 0.067 EUR
1330+ 0.054 EUR
1405+ 0.051 EUR
Mindestbestellmenge: 725
TBC857B,LM(T TBC857B,LM(T TOSHIBA TBC857.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.32W
Case: SOT23
Current gain: 210...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Produkt ist nicht verfügbar
TDTC114E,LM(T TDTC114E,LM(T TOSHIBA TDTC114E.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
auf Bestellung 7210 Stücke:
Lieferzeit 14-21 Tag (e)
1520+0.047 EUR
2170+ 0.033 EUR
2460+ 0.029 EUR
2800+ 0.026 EUR
2950+ 0.024 EUR
Mindestbestellmenge: 1520
TDTC114Y,LM(T TDTC114Y,LM(T TOSHIBA TDTC114Y.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 7910 Stücke:
Lieferzeit 14-21 Tag (e)
1520+0.047 EUR
2160+ 0.033 EUR
2455+ 0.029 EUR
2795+ 0.026 EUR
2945+ 0.024 EUR
Mindestbestellmenge: 1520
TDTC124E,LM(T TDTC124E,LM(T TOSHIBA TDTC124E.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 8050 Stücke:
Lieferzeit 14-21 Tag (e)
1520+0.047 EUR
2170+ 0.033 EUR
2460+ 0.029 EUR
2810+ 0.025 EUR
2980+ 0.024 EUR
Mindestbestellmenge: 1520
TDTC144E,LM(T TDTC144E,LM(T TOSHIBA TDTC144E.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 10660 Stücke:
Lieferzeit 14-21 Tag (e)
1520+0.047 EUR
2170+ 0.033 EUR
2460+ 0.029 EUR
2830+ 0.025 EUR
2980+ 0.024 EUR
Mindestbestellmenge: 1520
74LCX125FT(AE) 74LCX125FT(AE) TOSHIBA 74LCX125FT.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Delay time: 7ns
Terminal pitch: 0.65mm
Produkt ist nicht verfügbar
74LCX126FT(AE) 74LCX126FT(AE) TOSHIBA 74LCX126FT.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...3.6V DC
Case: TSSOP14
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Delay time: 7ns
Kind of output: 3-state
Terminal pitch: 0.65mm
Manufacturer series: LCX
Produkt ist nicht verfügbar
TK3P50D,RQ TK3P50D,RQ TOSHIBA TK3P50D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
TLP3115(TP.M.F) TOSHIBA TLP3115.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
Max. off-state voltage: 40V
Produkt ist nicht verfügbar
TLP3123(TP.F) TOSHIBA TLP3123.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 3ms
Turn-off time: 0.5ms
Max. off-state voltage: 40V
Produkt ist nicht verfügbar
TLP3114(F) TLP3114(F) TOSHIBA TLP3114F.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
Produkt ist nicht verfügbar
TLP3123(F) TLP3123(F) TOSHIBA TLP3123.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 1.2ms
Turn-off time: 0.2ms
Produkt ist nicht verfügbar
CUS10F30,H3F CUS10F30,H3F TOSHIBA CUS10F30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
TTC0002(Q) TTC0002(Q) TOSHIBA TTC0002.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 18A
Power dissipation: 180W
Case: TO3PL
Current gain: 80...160
Mounting: THT
Frequency: 30MHz
auf Bestellung 543 Stücke:
Lieferzeit 14-21 Tag (e)
18+4 EUR
20+ 3.72 EUR
27+ 2.66 EUR
29+ 2.52 EUR
Mindestbestellmenge: 18
SSM3K329R,LF(B SSM3K329R,LF(B TOSHIBA SSM3K329R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23F
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 289mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
74VHC238FT(BJ) 74VHC238FT(BJ) TOSHIBA 74VHC238FT.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; C²MOS; SMD; TSSOP16; VHC; 0.65mm
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Technology: C²MOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Terminal pitch: 0.65mm
Delay time: 5.5ns
Produkt ist nicht verfügbar
TK65G10N1,RQ(S TOSHIBA TK65G10N1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 283A
Power dissipation: 156W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
74VHC27FT(BJ) 74VHC27FT(BJ) TOSHIBA 74VHC27FT.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; C²MOS; SMD; TSSOP14; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: C²MOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 4.1ns
Terminal pitch: 0.65mm
Produkt ist nicht verfügbar
SSM3K324R,LF(T
+1
 		SSM3K324R,LF(T TOSHIBA SSM3K324R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
SSM3K333R,LF(B SSM3K333R,LF(B TOSHIBA SSM3K333R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 6884 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
430+ 0.17 EUR
485+ 0.15 EUR
590+ 0.12 EUR
Mindestbestellmenge: 360
SSM3K37MFV,L3F SSM3K37MFV,L3F TOSHIBA SSM3K37MFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
auf Bestellung 14225 Stücke:
Lieferzeit 14-21 Tag (e)
300+0.24 EUR
940+ 0.076 EUR
1045+ 0.069 EUR
1370+ 0.052 EUR
1450+ 0.049 EUR
Mindestbestellmenge: 300
TPHR8504PL,L1Q(M TPHR8504PL,L1Q(M TOSHIBA TPHR8504PL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; 170W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 170W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK20G60W,RVQ(S TK20G60W,RVQ(S TOSHIBA TK20G60W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK20P04M1,RQ(S TK20P04M1,RQ(S TOSHIBA TK20P04M1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 27W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK62J60W,S1VQ(O TK62J60W,S1VQ(O TOSHIBA TK62J60W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK650A60F,S4X(S TK650A60F,S4X(S TOSHIBA TK650A60F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 45W
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.54Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
auf Bestellung 1071 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.62 EUR
31+ 2.36 EUR
40+ 1.79 EUR
43+ 1.69 EUR
Mindestbestellmenge: 28
TK65E10N1,S1X(S TOSHIBA TK65E10N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 296A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK65S04N1L,LQ(O TK65S04N1L,LQ(O TOSHIBA TK65S04N1L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
1SS300(TE85L,F) 1SS300.pdf
1SS300(TE85L,F)
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 4pF
Max. forward impulse current: 2A
Produkt ist nicht verfügbar
1SS307E,L3F(T 1SS307E.pdf
1SS307E,L3F(T
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; SOD523; Ufmax: 1.3V; Ifsm: 1A
Power dissipation: 0.15W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.3V
Load current: 0.1A
Capacitance: 6pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
1SS370(TE85L,F) 1SS370.pdf
1SS370(TE85L,F)
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT323; Ufmax: 1.2V; 100mW
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Features of semiconductor devices: fast switching
Reverse recovery time: 60ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 2A
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
1SS381(TPH3,F)
1SS381(TPH3,F)
Hersteller: TOSHIBA
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; SOD523; single diode; Ufmax: 0.85V
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 30V
Features of semiconductor devices: band-switching; RF
Type of diode: switching
Max. forward voltage: 0.85V
Load current: 0.1A
Capacitance: 0.7pF
Produkt ist nicht verfügbar
1SS387,L3F(T 1SS387.pdf
1SS387,L3F(T
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOD523; Ufmax: 1.2V; Ifsm: 1A
Power dissipation: 0.15W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 1A
auf Bestellung 46970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
760+0.094 EUR
1950+ 0.037 EUR
2160+ 0.033 EUR
2720+ 0.026 EUR
2875+ 0.025 EUR
Mindestbestellmenge: 760
1SS387CT,L3F(T 1SS387CT.pdf
1SS387CT,L3F(T
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 1.6ns; SOD882; Ufmax: 1.2V; 150mW
Power dissipation: 0.15W
Case: SOD882
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 1.6ns
Max. load current: 0.2A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 0.5pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
2SC2713-BL(TE85L,F
2SC2713-BL(TE85L,F
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59
Frequency: 100MHz
Collector-emitter voltage: 120V
Current gain: 350...700
Collector current: 0.1A
Type of transistor: NPN
auf Bestellung 2370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
600+0.12 EUR
670+ 0.11 EUR
870+ 0.083 EUR
910+ 0.079 EUR
Mindestbestellmenge: 600
2SC2713-GR,LF(T 2SC2713.pdf
2SC2713-GR,LF(T
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59
Frequency: 100MHz
Collector-emitter voltage: 120V
Current gain: 200...400
Collector current: 0.1A
Type of transistor: NPN
auf Bestellung 12880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
510+0.14 EUR
800+ 0.09 EUR
970+ 0.074 EUR
1030+ 0.07 EUR
3000+ 0.067 EUR
Mindestbestellmenge: 510
74LCX08FT(AE) 74LCX08FT.pdf
74LCX08FT(AE)
Hersteller: TOSHIBA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 1.65÷3.6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 6.5ns
Family: LCX
Terminal pitch: 0.65mm
Produkt ist nicht verfügbar
TLP104(E(T TLP104.pdf
TLP104(E(T
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; 3.75kV; 1Mbps; SO6; 15kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 3.75kV
Transfer rate: 1Mbps
Case: SO6
Slew rate: 15kV/μs
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
53+1.36 EUR
59+ 1.22 EUR
74+ 0.97 EUR
75+ 0.96 EUR
Mindestbestellmenge: 53
TLP104(TPL.E(T TLP104.pdf
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Produkt ist nicht verfügbar
TLP104(TPR.E(T TLP104.pdf
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Produkt ist nicht verfügbar
TLP104(V4-TPL.E(T TLP104.pdf
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Produkt ist nicht verfügbar
GT40WR21,Q(O GT40WR21.pdf
GT40WR21,Q(O
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+15.62 EUR
7+ 11.11 EUR
Mindestbestellmenge: 5
TPHR9003NL TPHR9003NL.pdf
TPHR9003NL
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.58 EUR
23+ 3.2 EUR
28+ 2.63 EUR
29+ 2.49 EUR
Mindestbestellmenge: 20
CUS520,H3F(T CUS520.pdf
CUS520,H3F(T
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOD323
Max. off-state voltage: 30V
Max. load current: 0.3A
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
auf Bestellung 1470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
760+0.094 EUR
1470+ 0.049 EUR
Mindestbestellmenge: 760
DF5A5.6F(TE85L,F) DF5A5.6F.pdf
DF5A5.6F(TE85L,F)
Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Number of channels: 4
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Breakdown voltage: 5.6V
Leakage current: 1µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2W
Semiconductor structure: common anode; unidirectional
Produkt ist nicht verfügbar
TLP5754H(D4TP4.E(T TLP5754H.pdf
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Produkt ist nicht verfügbar
TLP5754H(TP.E(T TLP5754H.pdf
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Produkt ist nicht verfügbar
TLX9185A(TEEGBTF(O TLX9185A.pdf
Hersteller: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Collector-emitter voltage: 80V
Case: SO6
Turn-on time: 5µs
Turn-off time: 5µs
Output voltage: 6V
Produkt ist nicht verfügbar
TK34E10N1,S1X(S TK34E10N1.pdf
TK34E10N1,S1X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 812 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
60+ 1.2 EUR
68+ 1.06 EUR
70+ 1.03 EUR
74+ 0.97 EUR
75+ 0.96 EUR
Mindestbestellmenge: 54
SSM6K403TU,LF(T SSM6K403TU.pdf
SSM6K403TU,LF(T
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
177+0.4 EUR
264+ 0.27 EUR
280+ 0.26 EUR
Mindestbestellmenge: 177
SSM3K72KCT,L3F(T SSM3K72KCT.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
SSM3J328R,LF(T SSM3J328R.pdf
SSM3J328R,LF(T
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
SSM3J334R,LF(T SSM3J334R.pdf
SSM3J334R,LF(T
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2310 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
455+ 0.16 EUR
520+ 0.14 EUR
550+ 0.13 EUR
585+ 0.12 EUR
Mindestbestellmenge: 380
SSM3K341R,LF(T SSM3K341R.pdf
SSM3K341R,LF(T
+1
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
158+ 0.45 EUR
180+ 0.4 EUR
207+ 0.35 EUR
219+ 0.33 EUR
Mindestbestellmenge: 76
SSM3K36FS,LF(T SSM3K36FS.pdf
SSM3K36FS,LF(T
+1
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Mounting: SMD
Case: SSM
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1.52Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 1A
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
SSM6J502NU,LF(T SSM6J502NU.pdf
SSM6J502NU,LF(T
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 24.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
SSM6J503NU,LF(T SSM6J503NU.pdf
SSM6J503NU,LF(T
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
SSM6K504NU,LF(T SSM6K504NU.pdf
SSM6K504NU,LF(T
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 1678 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
355+0.2 EUR
425+ 0.17 EUR
470+ 0.15 EUR
510+ 0.14 EUR
Mindestbestellmenge: 355
SSM3K35MFV,L3F(T SSM3K35MFV.pdf
SSM3K35MFV,L3F(T
+1
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
SSM3K7002KFU,LF(T SSM3K7002KFU.pdf
SSM3K7002KFU,LF(T
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 38125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
970+ 0.074 EUR
1075+ 0.067 EUR
1330+ 0.054 EUR
1405+ 0.051 EUR
Mindestbestellmenge: 725
TBC857B,LM(T TBC857.pdf
TBC857B,LM(T
Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.32W
Case: SOT23
Current gain: 210...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Produkt ist nicht verfügbar
TDTC114E,LM(T TDTC114E.pdf
TDTC114E,LM(T
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
auf Bestellung 7210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1520+0.047 EUR
2170+ 0.033 EUR
2460+ 0.029 EUR
2800+ 0.026 EUR
2950+ 0.024 EUR
Mindestbestellmenge: 1520
TDTC114Y,LM(T TDTC114Y.pdf
TDTC114Y,LM(T
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 7910 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1520+0.047 EUR
2160+ 0.033 EUR
2455+ 0.029 EUR
2795+ 0.026 EUR
2945+ 0.024 EUR
Mindestbestellmenge: 1520
TDTC124E,LM(T TDTC124E.pdf
TDTC124E,LM(T
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 8050 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1520+0.047 EUR
2170+ 0.033 EUR
2460+ 0.029 EUR
2810+ 0.025 EUR
2980+ 0.024 EUR
Mindestbestellmenge: 1520
TDTC144E,LM(T TDTC144E.pdf
TDTC144E,LM(T
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 10660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1520+0.047 EUR
2170+ 0.033 EUR
2460+ 0.029 EUR
2830+ 0.025 EUR
2980+ 0.024 EUR
Mindestbestellmenge: 1520
74LCX125FT(AE) 74LCX125FT.pdf
74LCX125FT(AE)
Hersteller: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Delay time: 7ns
Terminal pitch: 0.65mm
Produkt ist nicht verfügbar
74LCX126FT(AE) 74LCX126FT.pdf
74LCX126FT(AE)
Hersteller: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...3.6V DC
Case: TSSOP14
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Delay time: 7ns
Kind of output: 3-state
Terminal pitch: 0.65mm
Manufacturer series: LCX
Produkt ist nicht verfügbar
TK3P50D,RQ TK3P50D.pdf
TK3P50D,RQ
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
TLP3115(TP.M.F) TLP3115.pdf
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
Max. off-state voltage: 40V
Produkt ist nicht verfügbar
TLP3123(TP.F) TLP3123.pdf
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 3ms
Turn-off time: 0.5ms
Max. off-state voltage: 40V
Produkt ist nicht verfügbar
TLP3114(F) TLP3114F.pdf
TLP3114(F)
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
Produkt ist nicht verfügbar
TLP3123(F) TLP3123.pdf
TLP3123(F)
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 1.2ms
Turn-off time: 0.2ms
Produkt ist nicht verfügbar
CUS10F30,H3F CUS10F30.pdf
CUS10F30,H3F
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
TTC0002(Q) TTC0002.pdf
TTC0002(Q)
Hersteller: TOSHIBA
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 18A
Power dissipation: 180W
Case: TO3PL
Current gain: 80...160
Mounting: THT
Frequency: 30MHz
auf Bestellung 543 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4 EUR
20+ 3.72 EUR
27+ 2.66 EUR
29+ 2.52 EUR
Mindestbestellmenge: 18
SSM3K329R,LF(B SSM3K329R.pdf
SSM3K329R,LF(B
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23F
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 289mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
74VHC238FT(BJ) 74VHC238FT.pdf
74VHC238FT(BJ)
Hersteller: TOSHIBA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; C²MOS; SMD; TSSOP16; VHC; 0.65mm
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Technology: C²MOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Terminal pitch: 0.65mm
Delay time: 5.5ns
Produkt ist nicht verfügbar
TK65G10N1,RQ(S TK65G10N1.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 283A
Power dissipation: 156W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
74VHC27FT(BJ) 74VHC27FT.pdf
74VHC27FT(BJ)
Hersteller: TOSHIBA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; C²MOS; SMD; TSSOP14; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: C²MOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 4.1ns
Terminal pitch: 0.65mm
Produkt ist nicht verfügbar
SSM3K324R,LF(T SSM3K324R.pdf
SSM3K324R,LF(T
+1
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
SSM3K333R,LF(B SSM3K333R.pdf
SSM3K333R,LF(B
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 6884 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
430+ 0.17 EUR
485+ 0.15 EUR
590+ 0.12 EUR
Mindestbestellmenge: 360
SSM3K37MFV,L3F SSM3K37MFV.pdf
SSM3K37MFV,L3F
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
auf Bestellung 14225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
300+0.24 EUR
940+ 0.076 EUR
1045+ 0.069 EUR
1370+ 0.052 EUR
1450+ 0.049 EUR
Mindestbestellmenge: 300
TPHR8504PL,L1Q(M TPHR8504PL.pdf
TPHR8504PL,L1Q(M
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; 170W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 170W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK20G60W,RVQ(S TK20G60W.pdf
TK20G60W,RVQ(S
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK20P04M1,RQ(S TK20P04M1.pdf
TK20P04M1,RQ(S
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 27W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK62J60W,S1VQ(O TK62J60W.pdf
TK62J60W,S1VQ(O
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK650A60F,S4X(S TK650A60F.pdf
TK650A60F,S4X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 45W
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.54Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
auf Bestellung 1071 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
28+2.62 EUR
31+ 2.36 EUR
40+ 1.79 EUR
43+ 1.69 EUR
Mindestbestellmenge: 28
TK65E10N1,S1X(S TK65E10N1.pdf
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 296A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
TK65S04N1L,LQ(O TK65S04N1L.pdf
TK65S04N1L,LQ(O
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 82 164 246 328 410 492 574 656 738 817 818 819 820 821 822 823 824 825 826  [ Nächste Seite >> ]