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TK3P50D,RQ TOSHIBA
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
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Technische Details TK3P50D,RQ TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 3A, Power dissipation: 60W, Case: DPAK, Gate-source voltage: ±30V, On-state resistance: 3Ω, Mounting: SMD, Gate charge: 7nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 4000 Stücke.
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TK3P50D,RQ | Hersteller : TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |