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SSM3K35MFV,L3F(T

SSM3K35MFV,L3F(T Toshiba


318docget.jsptypedatasheetlangenpidssm3k35mfv.jsptypedatasheetlangen.pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 20V 0.18A 3-Pin VESM T/R
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Technische Details SSM3K35MFV,L3F(T Toshiba

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723, Mounting: SMD, Case: SOT723, Kind of package: reel; tape, Drain-source voltage: 20V, Drain current: 0.18A, On-state resistance: 20Ω, Type of transistor: N-MOSFET, Power dissipation: 0.15W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Gate-source voltage: ±10V, Anzahl je Verpackung: 40000 Stücke.

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SSM3K35MFV,L3F(T
+1
SSM3K35MFV,L3F(T Hersteller : TOSHIBA SSM3K35MFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 40000 Stücke
Produkt ist nicht verfügbar
SSM3K35MFV,L3F(T
+1
SSM3K35MFV,L3F(T Hersteller : TOSHIBA SSM3K35MFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Produkt ist nicht verfügbar