Technische Details SSM3K35MFV,L3F(T Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723, Mounting: SMD, Case: SOT723, Kind of package: reel; tape, Drain-source voltage: 20V, Drain current: 0.18A, On-state resistance: 20Ω, Type of transistor: N-MOSFET, Power dissipation: 0.15W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Gate-source voltage: ±10V, Anzahl je Verpackung: 40000 Stücke.
Weitere Produktangebote SSM3K35MFV,L3F(T
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() +1 |
SSM3K35MFV,L3F(T | Hersteller : TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Mounting: SMD Case: SOT723 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.18A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 40000 Stücke |
Produkt ist nicht verfügbar |
|
![]() +1 |
SSM3K35MFV,L3F(T | Hersteller : TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Mounting: SMD Case: SOT723 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.18A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |