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SSM6J503NU,LF(T TOSHIBA
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Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
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Technische Details SSM6J503NU,LF(T TOSHIBA
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6, Mounting: SMD, Case: uDFN6, Kind of package: reel; tape, Drain-source voltage: -20V, Drain current: -6A, On-state resistance: 89.6mΩ, Type of transistor: P-MOSFET, Power dissipation: 1W, Polarisation: unipolar, Gate charge: 12.8nC, Kind of channel: enhanced, Gate-source voltage: ±8V, Anzahl je Verpackung: 1 Stücke.
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SSM6J503NU,LF(T | Hersteller : TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 89.6mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |