SSM6K504NU,LF(T TOSHIBA
Hersteller: TOSHIBACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 9A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 4.8nC
Kind of channel: enhanced
Pulsed drain current: 18A
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1678 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 355+ | 0.2 EUR |
| 425+ | 0.17 EUR |
| 470+ | 0.15 EUR |
| 510+ | 0.14 EUR |
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Technische Details SSM6K504NU,LF(T TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6, Mounting: SMD, Case: uDFN6, Kind of package: reel; tape, Drain-source voltage: 30V, Drain current: 9A, On-state resistance: 26mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.25W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Gate charge: 4.8nC, Kind of channel: enhanced, Pulsed drain current: 18A, Gate-source voltage: ±20V, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote SSM6K504NU,LF(T nach Preis ab 0.14 EUR bis 0.2 EUR
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SSM6K504NU,LF(T | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 9A On-state resistance: 26mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 4.8nC Kind of channel: enhanced Pulsed drain current: 18A Gate-source voltage: ±20V |
auf Bestellung 1678 Stücke: Lieferzeit 14-21 Tag (e) |
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