Technische Details TK18A30D,S5X(M Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 300V, Drain current: 18A, Power dissipation: 45W, Case: SC67, Gate-source voltage: ±20V, On-state resistance: 139mΩ, Mounting: THT, Gate charge: 60nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TK18A30D,S5X(M
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| TK18A30D,S5X(M | Hersteller : TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 18A Power dissipation: 45W Case: SC67 Gate-source voltage: ±20V On-state resistance: 139mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| TK18A30D,S5X(M | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 18A Power dissipation: 45W Case: SC67 Gate-source voltage: ±20V On-state resistance: 139mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |