GT20J341,S4X(S Toshiba
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 3.34 EUR |
| 58+ | 2.61 EUR |
| 100+ | 2.35 EUR |
| 200+ | 2.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GT20J341,S4X(S Toshiba
Description: DISCRETE IGBT TRANSISTOR TO-220S, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-220SIS, Td (on/off) @ 25°C: 60ns/240ns, Switching Energy: 500µJ (on), 400µJ (off), Test Condition: 300V, 20A, 33Ohm, 15V, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 45 W.
Weitere Produktangebote GT20J341,S4X(S nach Preis ab 3.25 EUR bis 3.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| GT20J341,S4X(S | Hersteller : Toshiba Semiconductor and Storage |
 Description: DISCRETE IGBT TRANSISTOR TO-220SPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-220SIS Td (on/off) @ 25°C: 60ns/240ns Switching Energy: 500µJ (on), 400µJ (off) Test Condition: 300V, 20A, 33Ohm, 15V Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 45 W |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||
|
|
GT20J341,S4X(S | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
|||||||
 |
GT20J341,S4X(S | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 20A 45000mW 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
|||||||
|
|
GT20J341,S4X(S | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 20A 45W 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
|||||||
 |
GT20J341,S4X(S | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 11A Power dissipation: 45W Case: TO220FP Gate-emitter voltage: ±25V Pulsed collector current: 80A Mounting: THT Kind of package: tube Turn-on time: 0.2µs Turn-off time: 370ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
 |
GT20J341,S4X(S | Hersteller : Toshiba |
IGBT Transistors DISCRETE IGBT TRANSISTOR TO-220SIS MOQ=50 V=1.5 IC=20A |
Produkt ist nicht verfügbar |
|||||||
|
|
GT20J341,S4X(S | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 11A Power dissipation: 45W Case: TO220FP Gate-emitter voltage: ±25V Pulsed collector current: 80A Mounting: THT Kind of package: tube Turn-on time: 0.2µs Turn-off time: 370ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |