GT50JR21(STA1,E,S) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: PB-F IGBT / TRANSISTOR TO-3PN(OS
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 230 W
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.41 EUR |
| 25+ | 5.87 EUR |
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Technische Details GT50JR21(STA1,E,S) Toshiba Semiconductor and Storage
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN, Mounting: THT, Type of transistor: IGBT, Power dissipation: 230W, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Case: TO3PN, Collector-emitter voltage: 600V, Gate-emitter voltage: ±25V, Collector current: 49A, Pulsed collector current: 100A, Turn-on time: 430ns, Turn-off time: 720ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote GT50JR21(STA1,E,S) nach Preis ab 3.73 EUR bis 7.46 EUR
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GT50JR21(STA1,E,S) | Hersteller : Toshiba |
IGBT Transistors Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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GT50JR21(STA1,E,S) | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 50A 230000mW 3-Pin(3+Tab) TO-3PN Magazine |
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GT50JR21(STA1,E,S) | Hersteller : Toshiba |
Trans IGBT Chip N-CH 600V 50A 230W 3-Pin(3+Tab) TO-3PN Magazine |
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GT50JR21(STA1,E,S) | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN Mounting: THT Type of transistor: IGBT Power dissipation: 230W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Case: TO3PN Collector-emitter voltage: 600V Gate-emitter voltage: ±25V Collector current: 49A Pulsed collector current: 100A Turn-on time: 430ns Turn-off time: 720ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GT50JR21(STA1,E,S) | Hersteller : TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN Mounting: THT Type of transistor: IGBT Power dissipation: 230W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Case: TO3PN Collector-emitter voltage: 600V Gate-emitter voltage: ±25V Collector current: 49A Pulsed collector current: 100A Turn-on time: 430ns Turn-off time: 720ns |
Produkt ist nicht verfügbar |