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TK20P04M1,RQ(S TK20P04M1,RQ(S TOSHIBA TK20P04M1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 27W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK22E10N1,S1X(S TK22E10N1,S1X(S TOSHIBA TK22E10N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK25S06N1L,LQ(O TK25S06N1L,LQ(O TOSHIBA TK25S06N1L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK2K2A60F,S4X(S TK2K2A60F,S4X(S TOSHIBA TK2K2A60F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP
Mounting: THT
Kind of package: tube
Drain current: 3.5A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Case: TO220FP
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK30E06N1,S1X(S TK30E06N1,S1X(S TOSHIBA TK30E06N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB
Mounting: THT
Drain-source voltage: 60V
Drain current: 30A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK31E60W,S1VX(S TK31E60W,S1VX(S TOSHIBA TK31E60W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK31V60W5,LVQ(S TK31V60W5,LVQ(S TOSHIBA TK31V60W5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 240W
Case: DFN
Gate-source voltage: ±30V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 8x8mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK32E12N1,S1X(S TK32E12N1,S1X(S TOSHIBA TK32E12N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 32A
Power dissipation: 98W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK33S10N1L,LQ(O TK33S10N1L,LQ(O TOSHIBA Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16.2Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 823 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.13 EUR
38+ 1.93 EUR
50+ 1.43 EUR
54+ 1.34 EUR
Mindestbestellmenge: 34
TK34E10N1,S1X(S TK34E10N1,S1X(S TOSHIBA TK34E10N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 812 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.34 EUR
60+ 1.2 EUR
68+ 1.06 EUR
70+ 1.03 EUR
74+ 0.97 EUR
75+ 0.96 EUR
Mindestbestellmenge: 54
TK35E08N1,S1X(S TK35E08N1,S1X(S TOSHIBA Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 72W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.23 EUR
72+ 1.01 EUR
82+ 0.88 EUR
92+ 0.78 EUR
97+ 0.74 EUR
250+ 0.73 EUR
Mindestbestellmenge: 59
TK380A60Y,S4X TK380A60Y,S4X TOSHIBA TK380A60Y.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.1A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.1A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK39J60W,S1VQ(O TK39J60W,S1VQ(O TOSHIBA TK39J60W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK39N60X,S1F(S TK39N60X,S1F(S TOSHIBA TK39N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.45 EUR
12+ 5.99 EUR
Mindestbestellmenge: 9
TK3A65D TK3A65D TOSHIBA TK3A65D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.93Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.25 EUR
29+ 2.46 EUR
50+ 1.47 EUR
Mindestbestellmenge: 22
TK3P50D,RQ TK3P50D,RQ TOSHIBA TK3P50D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
TK40E06N1,S1X(S TK40E06N1,S1X(S TOSHIBA TK40E06N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 67W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 67W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK40E10N1,S1X(S TK40E10N1,S1X(S TOSHIBA TK40E10N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 126W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 126W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1450 Stücke
Produkt ist nicht verfügbar
TK42A12N1,S4X(S TK42A12N1,S4X(S TOSHIBA TK42A12N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 42A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 42A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK430A60F,S4X(S TK430A60F,S4X(S TOSHIBA TK430A60F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 52A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 850 Stücke
Produkt ist nicht verfügbar
TK49N65W,S1F(S TK49N65W,S1F(S TOSHIBA TK49N65W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49.2A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK4A60DA(STA4,Q,M) TK4A60DA(STA4,Q,M) TOSHIBA Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 35W; SC67
Mounting: THT
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: SC67
Drain-source voltage: 600V
Drain current: 3.5A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 628 Stücke:
Lieferzeit 7-14 Tag (e)
63+1.14 EUR
85+ 0.84 EUR
96+ 0.75 EUR
110+ 0.65 EUR
117+ 0.61 EUR
Mindestbestellmenge: 63
TK56E12N1,S1X(S TOSHIBA TK56E12N1 THT N channel transistors
auf Bestellung 810 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.73 EUR
40+ 1.79 EUR
43+ 1.69 EUR
Mindestbestellmenge: 27
TK58E06N1,S1X TK58E06N1,S1X TOSHIBA TK58E06N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK60S06K3L(T6L1,NQ TOSHIBA TK60S06K3L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 120A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK60S10N1L,LQ(O TOSHIBA TK60S10N1L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK62J60W,S1VQ(O TK62J60W,S1VQ(O TOSHIBA TK62J60W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK62N60W,S1VF(S TK62N60W,S1VF(S TOSHIBA TK62N60W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK62N60W5,S1VF(S TOSHIBA TK62N60W5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK62N60X,S1F(S TK62N60X,S1F(S TOSHIBA TK62N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK650A60F,S4X(S TK650A60F,S4X(S TOSHIBA TK650A60F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 45W
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.54Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1071 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.62 EUR
31+ 2.36 EUR
40+ 1.79 EUR
43+ 1.69 EUR
Mindestbestellmenge: 28
TK65A10N1,S4X(S TK65A10N1,S4X(S TOSHIBA TK65A10N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 100V
Drain current: 148A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 81nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 850 Stücke
Produkt ist nicht verfügbar
TK65E10N1,S1X(S TOSHIBA TK65E10N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 296A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK65G10N1,RQ(S TOSHIBA TK65G10N1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 283A
Power dissipation: 156W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
TK65S04K3L(T6L1,NQ TK65S04K3L(T6L1,NQ TOSHIBA docget.jsp?did=11262&prodName=TK65S04K3L Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK65S04N1L,LQ(O TK65S04N1L,LQ(O TOSHIBA TK65S04N1L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK6A50D(STA4,Q,M) TK6A50D(STA4,Q,M) TOSHIBA TK6A50D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; Idm: 24A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220FP
On-state resistance: 1.2Ω
Pulsed drain current: 24A
Power dissipation: 35W
Gate charge: 11nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6A60W,S4VX(M TK6A60W,S4VX(M TOSHIBA TK6A60W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1200 Stücke
Produkt ist nicht verfügbar
TK6A65D(STA4,Q,M) TK6A65D(STA4,Q,M) TOSHIBA TK6A65D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6A65W,S5X(M TK6A65W,S5X(M TOSHIBA TK6A65W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 23.2A
Mounting: THT
Case: TO220FP
Drain-source voltage: 650V
Drain current: 5.8A
On-state resistance: 0.85Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6A80E,S4X(S TK6A80E,S4X(S TOSHIBA TK6A80E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 171 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.17 EUR
37+ 1.96 EUR
42+ 1.73 EUR
48+ 1.5 EUR
50+ 1.43 EUR
Mindestbestellmenge: 33
TK6P60W,RVQ(S TOSHIBA TK6P60W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK6P65W,RQ(S TOSHIBA TK6P65W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 60W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 60W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 23.2A
Mounting: SMD
Case: DPAK
Drain-source voltage: 650V
Drain current: 5.8A
On-state resistance: 0.89Ω
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK6Q60W,S1VQ(S TOSHIBA TK6Q60W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6Q65W,S1Q(S TOSHIBA TK6Q65W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 60W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 60W
Polarisation: unipolar
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 23.2A
Mounting: THT
Case: IPAK
Drain-source voltage: 650V
Drain current: 5.8A
On-state resistance: 0.89Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6R7P06PL,RQ(S2 TOSHIBA TK6R7P06PL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; Idm: 190A; 66W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Pulsed drain current: 190A
Power dissipation: 66W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
TK72E12N1,S1X(S TK72E12N1,S1X(S TOSHIBA TK72E12N1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; 255W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.93 EUR
28+ 2.63 EUR
36+ 2.03 EUR
38+ 1.93 EUR
Mindestbestellmenge: 25
TK7A60W,S4VX(M TK7A60W,S4VX(M TOSHIBA TK7A60W.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 30W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 30W
Case: SC67
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK8A50D(STA4,Q,M) TK8A50D(STA4,Q,M) TOSHIBA TK8A50D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 524 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.6 EUR
50+ 1.43 EUR
57+ 1.27 EUR
65+ 1.12 EUR
68+ 1.06 EUR
Mindestbestellmenge: 45
TK8P60W,RVQ TOSHIBA docget.jsp?did=13675&prodName=TK8P60W TK8P60W SMD N channel transistors
Produkt ist nicht verfügbar
TK9J90E,S1E(S TK9J90E,S1E(S TOSHIBA TK9J90E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9A; 250W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9A
Power dissipation: 250W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 379 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.85 EUR
22+ 3.35 EUR
23+ 3.16 EUR
Mindestbestellmenge: 15
TKR74F04PB,LQ(O TOSHIBA TKR74F04PB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 375W
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 0.98mΩ
Mounting: SMD
Gate charge: 227nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TLP104(E(T TLP104(E(T TOSHIBA TLP104.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; 3.75kV; 1Mbps; SO6; 15kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 3.75kV
Transfer rate: 1Mbps
Case: SO6
Slew rate: 15kV/μs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.36 EUR
59+ 1.22 EUR
73+ 0.99 EUR
77+ 0.93 EUR
Mindestbestellmenge: 53
TLP104(TPL.E(T TOSHIBA TLP104.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TLP104(TPR.E(T TOSHIBA TLP104.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
TLP104(V4-TPL.E(T TOSHIBA TLP104.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
TLP108(TPL,F) TOSHIBA TLP108_6-10-19.pdf TLP108-TPL.F Optocouplers - digital output
Produkt ist nicht verfügbar
TLP109(E(T TLP109(E(T TOSHIBA TLP109.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TLP109(IGM-TPL.E(T TOSHIBA TLP109(IGM.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
TLP109(TPL.E(T TLP109(TPL.E(T TOSHIBA TLP109.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1664 Stücke:
Lieferzeit 7-14 Tag (e)
63+1.14 EUR
66+ 1.09 EUR
90+ 0.8 EUR
95+ 0.75 EUR
500+ 0.74 EUR
Mindestbestellmenge: 63
TK20P04M1,RQ(S TK20P04M1.pdf
TK20P04M1,RQ(S
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 27W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK22E10N1,S1X(S TK22E10N1.pdf
TK22E10N1,S1X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK25S06N1L,LQ(O TK25S06N1L.pdf
TK25S06N1L,LQ(O
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK2K2A60F,S4X(S TK2K2A60F.pdf
TK2K2A60F,S4X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP
Mounting: THT
Kind of package: tube
Drain current: 3.5A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 14A
Case: TO220FP
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK30E06N1,S1X(S TK30E06N1.pdf
TK30E06N1,S1X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB
Mounting: THT
Drain-source voltage: 60V
Drain current: 30A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK31E60W,S1VX(S TK31E60W.pdf
TK31E60W,S1VX(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK31V60W5,LVQ(S TK31V60W5.pdf
TK31V60W5,LVQ(S
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 240W
Case: DFN
Gate-source voltage: ±30V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 8x8mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK32E12N1,S1X(S TK32E12N1.pdf
TK32E12N1,S1X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 32A
Power dissipation: 98W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK33S10N1L,LQ(O
TK33S10N1L,LQ(O
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16.2Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 823 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
34+2.13 EUR
38+ 1.93 EUR
50+ 1.43 EUR
54+ 1.34 EUR
Mindestbestellmenge: 34
TK34E10N1,S1X(S TK34E10N1.pdf
TK34E10N1,S1X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 812 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
60+ 1.2 EUR
68+ 1.06 EUR
70+ 1.03 EUR
74+ 0.97 EUR
75+ 0.96 EUR
Mindestbestellmenge: 54
TK35E08N1,S1X(S
TK35E08N1,S1X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 72W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.23 EUR
72+ 1.01 EUR
82+ 0.88 EUR
92+ 0.78 EUR
97+ 0.74 EUR
250+ 0.73 EUR
Mindestbestellmenge: 59
TK380A60Y,S4X TK380A60Y.pdf
TK380A60Y,S4X
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.1A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.1A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK39J60W,S1VQ(O TK39J60W.pdf
TK39J60W,S1VQ(O
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK39N60X,S1F(S TK39N60X.pdf
TK39N60X,S1F(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.45 EUR
12+ 5.99 EUR
Mindestbestellmenge: 9
TK3A65D TK3A65D.pdf
TK3A65D
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.93Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.25 EUR
29+ 2.46 EUR
50+ 1.47 EUR
Mindestbestellmenge: 22
TK3P50D,RQ TK3P50D.pdf
TK3P50D,RQ
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
TK40E06N1,S1X(S TK40E06N1.pdf
TK40E06N1,S1X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 67W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 67W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK40E10N1,S1X(S TK40E10N1.pdf
TK40E10N1,S1X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 126W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 126W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1450 Stücke
Produkt ist nicht verfügbar
TK42A12N1,S4X(S TK42A12N1.pdf
TK42A12N1,S4X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 42A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 42A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK430A60F,S4X(S TK430A60F.pdf
TK430A60F,S4X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 52A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 850 Stücke
Produkt ist nicht verfügbar
TK49N65W,S1F(S TK49N65W.pdf
TK49N65W,S1F(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49.2A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK4A60DA(STA4,Q,M)
TK4A60DA(STA4,Q,M)
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 35W; SC67
Mounting: THT
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: SC67
Drain-source voltage: 600V
Drain current: 3.5A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 628 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
63+1.14 EUR
85+ 0.84 EUR
96+ 0.75 EUR
110+ 0.65 EUR
117+ 0.61 EUR
Mindestbestellmenge: 63
TK56E12N1,S1X(S
Hersteller: TOSHIBA
TK56E12N1 THT N channel transistors
auf Bestellung 810 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.73 EUR
40+ 1.79 EUR
43+ 1.69 EUR
Mindestbestellmenge: 27
TK58E06N1,S1X TK58E06N1.pdf
TK58E06N1,S1X
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK60S06K3L(T6L1,NQ TK60S06K3L.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 120A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK60S10N1L,LQ(O TK60S10N1L.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK62J60W,S1VQ(O TK62J60W.pdf
TK62J60W,S1VQ(O
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK62N60W,S1VF(S TK62N60W.pdf
TK62N60W,S1VF(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK62N60W5,S1VF(S TK62N60W5.pdf
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK62N60X,S1F(S TK62N60X.pdf
TK62N60X,S1F(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK650A60F,S4X(S TK650A60F.pdf
TK650A60F,S4X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 45W
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.54Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1071 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
28+2.62 EUR
31+ 2.36 EUR
40+ 1.79 EUR
43+ 1.69 EUR
Mindestbestellmenge: 28
TK65A10N1,S4X(S TK65A10N1.pdf
TK65A10N1,S4X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 100V
Drain current: 148A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 81nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 850 Stücke
Produkt ist nicht verfügbar
TK65E10N1,S1X(S TK65E10N1.pdf
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 296A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK65G10N1,RQ(S TK65G10N1.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 283A
Power dissipation: 156W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
TK65S04K3L(T6L1,NQ docget.jsp?did=11262&prodName=TK65S04K3L
TK65S04K3L(T6L1,NQ
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK65S04N1L,LQ(O TK65S04N1L.pdf
TK65S04N1L,LQ(O
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK6A50D(STA4,Q,M) TK6A50D.pdf
TK6A50D(STA4,Q,M)
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; Idm: 24A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220FP
On-state resistance: 1.2Ω
Pulsed drain current: 24A
Power dissipation: 35W
Gate charge: 11nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6A60W,S4VX(M TK6A60W.pdf
TK6A60W,S4VX(M
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1200 Stücke
Produkt ist nicht verfügbar
TK6A65D(STA4,Q,M) TK6A65D.pdf
TK6A65D(STA4,Q,M)
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6A65W,S5X(M TK6A65W.pdf
TK6A65W,S5X(M
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 23.2A
Mounting: THT
Case: TO220FP
Drain-source voltage: 650V
Drain current: 5.8A
On-state resistance: 0.85Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6A80E,S4X(S TK6A80E.pdf
TK6A80E,S4X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 171 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.17 EUR
37+ 1.96 EUR
42+ 1.73 EUR
48+ 1.5 EUR
50+ 1.43 EUR
Mindestbestellmenge: 33
TK6P60W,RVQ(S TK6P60W.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK6P65W,RQ(S TK6P65W.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 60W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 60W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 23.2A
Mounting: SMD
Case: DPAK
Drain-source voltage: 650V
Drain current: 5.8A
On-state resistance: 0.89Ω
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
TK6Q60W,S1VQ(S TK6Q60W.pdf
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6Q65W,S1Q(S TK6Q65W.pdf
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 60W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 60W
Polarisation: unipolar
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 23.2A
Mounting: THT
Case: IPAK
Drain-source voltage: 650V
Drain current: 5.8A
On-state resistance: 0.89Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6R7P06PL,RQ(S2 TK6R7P06PL.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; Idm: 190A; 66W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Pulsed drain current: 190A
Power dissipation: 66W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
TK72E12N1,S1X(S TK72E12N1.pdf
TK72E12N1,S1X(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; 255W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+2.93 EUR
28+ 2.63 EUR
36+ 2.03 EUR
38+ 1.93 EUR
Mindestbestellmenge: 25
TK7A60W,S4VX(M TK7A60W.pdf
TK7A60W,S4VX(M
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 30W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 30W
Case: SC67
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK8A50D(STA4,Q,M) TK8A50D.pdf
TK8A50D(STA4,Q,M)
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 524 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
50+ 1.43 EUR
57+ 1.27 EUR
65+ 1.12 EUR
68+ 1.06 EUR
Mindestbestellmenge: 45
TK8P60W,RVQ docget.jsp?did=13675&prodName=TK8P60W
Hersteller: TOSHIBA
TK8P60W SMD N channel transistors
Produkt ist nicht verfügbar
TK9J90E,S1E(S TK9J90E.pdf
TK9J90E,S1E(S
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9A; 250W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9A
Power dissipation: 250W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 379 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.85 EUR
22+ 3.35 EUR
23+ 3.16 EUR
Mindestbestellmenge: 15
TKR74F04PB,LQ(O TKR74F04PB.pdf
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 375W
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 0.98mΩ
Mounting: SMD
Gate charge: 227nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TLP104(E(T TLP104.pdf
TLP104(E(T
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; 3.75kV; 1Mbps; SO6; 15kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 3.75kV
Transfer rate: 1Mbps
Case: SO6
Slew rate: 15kV/μs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.36 EUR
59+ 1.22 EUR
73+ 0.99 EUR
77+ 0.93 EUR
Mindestbestellmenge: 53
TLP104(TPL.E(T TLP104.pdf
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TLP104(TPR.E(T TLP104.pdf
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
TLP104(V4-TPL.E(T TLP104.pdf
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
TLP108(TPL,F) TLP108_6-10-19.pdf
Hersteller: TOSHIBA
TLP108-TPL.F Optocouplers - digital output
Produkt ist nicht verfügbar
TLP109(E(T TLP109.pdf
TLP109(E(T
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TLP109(IGM-TPL.E(T TLP109(IGM.pdf
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
TLP109(TPL.E(T TLP109.pdf
TLP109(TPL.E(T
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1664 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
63+1.14 EUR
66+ 1.09 EUR
90+ 0.8 EUR
95+ 0.75 EUR
500+ 0.74 EUR
Mindestbestellmenge: 63
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