TK6A65D(STA4,Q,M) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 650V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.94 EUR |
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Technische Details TK6A65D(STA4,Q,M) Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Weitere Produktangebote TK6A65D(STA4,Q,M) nach Preis ab 1.33 EUR bis 2.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TK6A65D(STA4,Q,M) | Hersteller : Toshiba | MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6A65D(STA4,Q,M) | Hersteller : Toshiba | Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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TK6A65DSTA4QM Produktcode: 143200 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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TK6A65D(STA4,Q,M) | Hersteller : Toshiba | Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS |
Produkt ist nicht verfügbar |
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TK6A65D(STA4,Q,M) | Hersteller : Toshiba | Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS |
Produkt ist nicht verfügbar |
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TK6A65D(STA4,Q,M) | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 45W Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 24A Case: TO220FP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK6A65D(STA4,Q,M) | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 45W Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 24A Case: TO220FP |
Produkt ist nicht verfügbar |