TK6Q65W,S1Q(S Toshiba

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 60W; IPAK, Type of transistor: N-MOSFET, Power dissipation: 60W, Polarisation: unipolar, Kind of package: tube, Gate charge: 11nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 23.2A, Mounting: THT, Case: IPAK, Drain-source voltage: 650V, Drain current: 5.8A, On-state resistance: 0.89Ω, Anzahl je Verpackung: 1 Stücke.