TK25S06N1L,LQ(O TOSHIBA
Hersteller: TOSHIBACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
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Technische Details TK25S06N1L,LQ(O TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 57W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 25A, Power dissipation: 57W, Case: DPAK, Gate-source voltage: ±20V, On-state resistance: 15mΩ, Mounting: SMD, Gate charge: 15nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 2000 Stücke.
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TK25S06N1L,LQ(O | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 57W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 57W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |