TK60S06K3L(T6L1,NQ Toshiba
auf Bestellung 1738 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 110+ | 1.41 EUR |
| 116+ | 1.29 EUR |
| 250+ | 1.2 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK60S06K3L(T6L1,NQ Toshiba
Description: MOSFET N-CH 60V 60A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V.
Weitere Produktangebote TK60S06K3L(T6L1,NQ nach Preis ab 1.03 EUR bis 2.69 EUR
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TK60S06K3L(T6L1,NQ | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 60V 60A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101 |
auf Bestellung 1595 Stücke: Lieferzeit 14-21 Tag (e) |
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TK60S06K3L(T6L1,NQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V |
auf Bestellung 1755 Stücke: Lieferzeit 10-14 Tag (e) |
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TK60S06K3L(T6L1,NQ | Hersteller : Toshiba |
MOSFET N-Ch MOS 60A 60V 88W 2900pF 0.008 |
auf Bestellung 1933 Stücke: Lieferzeit 10-14 Tag (e) |
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TK60S06K3L(T6L1,NQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 60A Automotive 3-Pin(2+Tab) DPAK+ T/R |
Produkt ist nicht verfügbar |
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TK60S06K3L(T6L1,NQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 60A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| TK60S06K3L(T6L1,NQ | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 120A; 88W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 120A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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TK60S06K3L(T6L1,NQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 60A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V |
Produkt ist nicht verfügbar |
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| TK60S06K3L(T6L1,NQ | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 120A; 88W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 120A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |