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CRF02(TE85L,Q,M) TOSHIBA
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Category: SMD universal diodes
Description: Diode: switching; SMD; 800V; 500mA; 100ns; S-FLAT; Ufmax: 2.2V
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 2.2V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1137 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
260+ | 0.28 EUR |
439+ | 0.16 EUR |
500+ | 0.14 EUR |
532+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CRF02(TE85L,Q,M) TOSHIBA
Description: DIODE GEN PURP 800V 500MA S-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 100 ns, Technology: Standard, Current - Average Rectified (Io): 500mA, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA, Current - Reverse Leakage @ Vr: 50 µA @ 800 V.
Weitere Produktangebote CRF02(TE85L,Q,M) nach Preis ab 0.13 EUR bis 0.74 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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CRF02(TE85L,Q,M) | Hersteller : TOSHIBA |
![]() Description: Diode: switching; SMD; 800V; 500mA; 100ns; S-FLAT; Ufmax: 2.2V Mounting: SMD Case: S-FLAT Kind of package: reel; tape Type of diode: switching Max. off-state voltage: 0.8kV Max. forward voltage: 2.2V Load current: 0.5A Semiconductor structure: single diode Reverse recovery time: 100ns Max. forward impulse current: 10A |
auf Bestellung 1137 Stücke: Lieferzeit 14-21 Tag (e) |
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CRF02(TE85L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 800V 500MA S-FLAT Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 800 V |
auf Bestellung 2698 Stücke: Lieferzeit 10-14 Tag (e) |
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CRF02(TE85L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 800V 500MA S-FLAT Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 800 V |
Produkt ist nicht verfügbar |
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CRF02(TE85L,Q,M) | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |