TK16N60W5,S1VF(S Toshiba

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 15.8A, Pulsed drain current: 63.2A, Power dissipation: 130W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.23Ω, Mounting: THT, Gate charge: 43nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.