TK12Q60W,S1VQ(S TOSHIBA

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; Idm: 46A; 100W; IPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 11.5A, Pulsed drain current: 46A, Power dissipation: 100W, Case: IPAK, Gate-source voltage: ±30V, On-state resistance: 0.34Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.