Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140806) > Seite 2331 nach 2347
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FZ600R12KE3HOSA1 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Power dissipation: 2.8kW |
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| FZ900R12KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MMES Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Power dissipation: 4.3kW |
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ISP742RI | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 Supply voltage: 5...34V DC Technology: Industrial PROFET |
auf Bestellung 1434 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCR321UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 0.25A Number of channels: 1 Mounting: SMD Operating voltage: 0...4.5V |
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BTT60302EKAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; PROFET™+ 24V Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-14-40 EP On-state resistance: 62mΩ Supply voltage: 5...36V DC Technology: PROFET™+ 24V |
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IPB117N20NFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3 Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 11.7mΩ Drain current: 84A Drain-source voltage: 200V Case: PG-TO263-3 Technology: OptiMOS™ FD Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 300W |
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IPB65R190CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced |
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IPL65R165CFDAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 21.3A Power dissipation: 195W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: SMD Kind of channel: enhanced |
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IPL65R210CFDAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 16.6A Power dissipation: 151W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Kind of channel: enhanced |
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IPL65R340CFDAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4 Mounting: SMD Drain current: 10.9A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-VSON-4 On-state resistance: 0.34Ω Power dissipation: 104.2W Polarisation: unipolar Technology: CoolMOS™ |
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IPL65R460CFDAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.3A Power dissipation: 83.3W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.46Ω Mounting: SMD Kind of channel: enhanced |
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FF45MR12W1M1B11BOMA1 | INFINEON TECHNOLOGIES |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A Case: AG-EASY1BM-2 Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-Fit Polarisation: unipolar On-state resistance: 45mΩ Pulsed drain current: 50A Technology: CoolSiC™; SiC Gate-source voltage: -10...20V Mechanical mounting: screw |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA083N10N5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP083N10N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 100W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA083N10NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 200A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE9250SJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Case: PG-DSO-8 Interface: CAN-FD Mounting: SMD Operating temperature: -40...150°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 60mA |
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TLE9250XSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 3...5.5V DC; 4.5...5.5V DC Case: PG-DSO-8 Interface: CAN-FD Mounting: SMD Operating temperature: -40...150°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 60mA |
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BFR360FH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 6V Collector current: 35mA Power dissipation: 0.21W Case: TSFP-3 Current gain: 90...160 Mounting: SMD Kind of package: reel; tape Frequency: 14GHz |
auf Bestellung 3005 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT029N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W Case: PG-HSOF-8 Mounting: SMD Kind of package: tape Pulsed drain current: 676A Drain-source voltage: 80V Drain current: 120A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 70nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V |
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IPA80R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 489 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA95R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP Mounting: THT Drain-source voltage: 950V Drain current: 5.5A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 23nC Technology: CoolMOS™ P7 Case: TO220FP Kind of channel: enhanced Gate-source voltage: ±20V |
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IPD80R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPD95R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK Mounting: SMD Drain-source voltage: 950V Drain current: 5.5A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 73W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: ESD protected gate Gate charge: 23nC Technology: CoolMOS™ P7 Case: DPAK Kind of channel: enhanced Gate-source voltage: ±20V |
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IPP60R750E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 48W; PG-TO220-3 Mounting: THT Power dissipation: 48W Polarisation: unipolar Technology: CoolMOS™ E6 Drain current: 5.7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 0.75Ω |
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IPP80R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPU80R750P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPAN70R750P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Technology: CoolMOS™ P7 Drain-source voltage: 700V Drain current: 4A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 20.8W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 8.3nC Kind of channel: enhanced Gate-source voltage: ±16V |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
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| IAUC64N08S5L075ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 13A Pulsed drain current: 256A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
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BAS7004SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT363; 250mW Mounting: SMD Case: SOT363 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series x2 Max. forward impulse current: 0.1A Power dissipation: 0.25W Type of diode: Schottky switching |
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IPP60R022S7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A Mounting: THT Polarisation: unipolar Technology: CoolMOS™ S7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 375A Case: TO220 Drain-source voltage: 600V Drain current: 23A On-state resistance: 47mΩ Type of transistor: N-MOSFET Power dissipation: 390W |
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BAS7006WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW Power dissipation: 0.25W Type of diode: Schottky switching Mounting: SMD Case: SOT323 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Max. forward impulse current: 0.1A |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
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FF200R17KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| FS150R17PE4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-ECONO4-1 Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 4 Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
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| TT162N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 162A; BG-PB34AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 162A Case: BG-PB34AT-1 Max. forward voltage: 1.41V Max. forward impulse current: 4.4kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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1EDN7550BXTSA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™ Kind of package: reel; tape Technology: EiceDRIVER™ Kind of integrated circuit: gate driver; low-side Topology: single transistor Voltage class: 80V Mounting: SMD Case: PG-SOT23-6 Supply voltage: 4.5...20V Output current: -8...4A Type of integrated circuit: driver Number of channels: 1 |
auf Bestellung 1545 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC082N10LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Kind of channel: enhanced |
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IPL60R180P6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.4A Power dissipation: 176W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhanced |
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| IPP60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 53A Power dissipation: 72W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPL60R104C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 122W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 42nC Kind of channel: enhanced |
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IPB016N06L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 180A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
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IRF6727MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| FP25R12W1T7B11BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 25A Case: AG-EASY1B-2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 50A Technology: EasyPIM™ 1B Mechanical mounting: screw |
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PVI1050NSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 2.5kV Case: Gull wing 8 Turn-on time: 0.3ms Turn-off time: 220µs Manufacturer series: PVI-NPbF |
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BSC030N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced |
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IPB011N04LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
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IPB011N04NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
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| IPD70N10S3L12ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 280A Power dissipation: 125W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Kind of channel: enhanced |
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IPP70N10S312AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 100V; 48A; 125W Type of transistor: N-MOSFET Technology: OptiMOS™ T Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Power dissipation: 125W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BSC070N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 114W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BSC070N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 114W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFU6215PBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -13A Power dissipation: 110W Case: IPAK Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| ITS4130QEPDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Mounting: SMD Supply voltage: 5...45V DC Number of channels: 4 Case: PG-TSDSO-14 Operating temperature: -40...150°C Kind of package: reel; tape Output current: 1.25A Kind of output: N-Channel Turn-off time: 75µs Power dissipation: 1.8W Technology: Industrial PROFET On-state resistance: 0.13Ω Turn-on time: 75µs |
Produkt ist nicht verfügbar |
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ITS4140N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 Supply voltage: 4.9...60V DC Technology: Industrial PROFET |
auf Bestellung 1827 Stücke: Lieferzeit 14-21 Tag (e) |
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TLF80511TCATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-3; SMD Mounting: SMD Case: PG-TO263-3 Operating temperature: -40...150°C Kind of package: reel; tape Input voltage: 3.3...40V Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.4A Voltage drop: 0.25V Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
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TLF80511TFV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD Mounting: SMD Case: DPAK Operating temperature: -40...150°C Kind of package: reel; tape Input voltage: 3.3...40V Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.4A Voltage drop: 0.25V Type of integrated circuit: voltage regulator |
auf Bestellung 1632 Stücke: Lieferzeit 14-21 Tag (e) |
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SAF-XC888LM-8FFI 5V AC | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI x3,UART x3; 5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI x3; UART x3 Supply voltage: 5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 1.75kB SRAM; 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
Produkt ist nicht verfügbar |
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XC8866FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 24kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
Produkt ist nicht verfügbar |
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XC8868FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
Produkt ist nicht verfügbar |
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XC8888FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
Produkt ist nicht verfügbar |
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XC878M16FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64 Type of integrated circuit: microcontroller 8051 Clock frequency: 26.7MHz Interface: SPI; UART Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 10 Memory: 3kB SRAM; 64kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 2 Number of input capture channels: 2 |
Produkt ist nicht verfügbar |
| FZ600R12KE3HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Produkt ist nicht verfügbar
| FZ900R12KE4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Produkt ist nicht verfügbar
| ISP742RI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
auf Bestellung 1434 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.69 EUR |
| 48+ | 1.52 EUR |
| 51+ | 1.42 EUR |
| 100+ | 1.37 EUR |
| BCR321UE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V
Produkt ist nicht verfügbar
| BTT60302EKAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; PROFET™+ 24V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14-40 EP
On-state resistance: 62mΩ
Supply voltage: 5...36V DC
Technology: PROFET™+ 24V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; PROFET™+ 24V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14-40 EP
On-state resistance: 62mΩ
Supply voltage: 5...36V DC
Technology: PROFET™+ 24V
Produkt ist nicht verfügbar
| IPB117N20NFDATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 11.7mΩ
Drain current: 84A
Drain-source voltage: 200V
Case: PG-TO263-3
Technology: OptiMOS™ FD
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 300W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 11.7mΩ
Drain current: 84A
Drain-source voltage: 200V
Case: PG-TO263-3
Technology: OptiMOS™ FD
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 300W
Produkt ist nicht verfügbar
| IPB65R190CFDATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPL65R165CFDAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.3A
Power dissipation: 195W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.3A
Power dissipation: 195W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPL65R210CFDAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.6A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.6A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPL65R340CFDAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4
Mounting: SMD
Drain current: 10.9A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-VSON-4
On-state resistance: 0.34Ω
Power dissipation: 104.2W
Polarisation: unipolar
Technology: CoolMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4
Mounting: SMD
Drain current: 10.9A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-VSON-4
On-state resistance: 0.34Ω
Power dissipation: 104.2W
Polarisation: unipolar
Technology: CoolMOS™
Produkt ist nicht verfügbar
| IPL65R460CFDAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FF45MR12W1M1B11BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 108.01 EUR |
| IPA083N10N5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.75 EUR |
| 34+ | 2.1 EUR |
| IPP083N10N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 100W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 100W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA083N10NM5SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 2.14 EUR |
| 38+ | 1.93 EUR |
| 43+ | 1.7 EUR |
| 48+ | 1.52 EUR |
| 50+ | 1.43 EUR |
| TLE9250SJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
| TLE9250XSJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
| BFR360FH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 6V
Collector current: 35mA
Power dissipation: 0.21W
Case: TSFP-3
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 6V
Collector current: 35mA
Power dissipation: 0.21W
Case: TSFP-3
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
auf Bestellung 3005 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 139+ | 0.51 EUR |
| 232+ | 0.31 EUR |
| 336+ | 0.21 EUR |
| 391+ | 0.18 EUR |
| 556+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| IPT029N08N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Pulsed drain current: 676A
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 70nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Pulsed drain current: 676A
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 70nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPA80R750P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.84 EUR |
| 43+ | 1.67 EUR |
| 65+ | 1.1 EUR |
| 69+ | 1.04 EUR |
| IPA95R750P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: TO220FP
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: TO220FP
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPD80R750P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPD95R750P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: DPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: DPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPP60R750E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 48W; PG-TO220-3
Mounting: THT
Power dissipation: 48W
Polarisation: unipolar
Technology: CoolMOS™ E6
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 0.75Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 48W; PG-TO220-3
Mounting: THT
Power dissipation: 48W
Polarisation: unipolar
Technology: CoolMOS™ E6
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 0.75Ω
Produkt ist nicht verfügbar
| IPP80R750P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPU80R750P7AKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPAN70R750P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 57+ | 1.26 EUR |
| 74+ | 0.98 EUR |
| 83+ | 0.87 EUR |
| 96+ | 0.75 EUR |
| 102+ | 0.7 EUR |
| IAUC64N08S5L075ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BAS7004SH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT363; 250mW
Mounting: SMD
Case: SOT363
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT363; 250mW
Mounting: SMD
Case: SOT363
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Produkt ist nicht verfügbar
| IPP60R022S7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Produkt ist nicht verfügbar
| BAS7006WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward impulse current: 0.1A
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 189+ | 0.37 EUR |
| FF200R17KE4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 243.2 EUR |
| FS150R17PE4BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
| TT162N16KOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 162A; BG-PB34AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 162A
Case: BG-PB34AT-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.4kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 162A; BG-PB34AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 162A
Case: BG-PB34AT-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.4kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| 1EDN7550BXTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Voltage class: 80V
Mounting: SMD
Case: PG-SOT23-6
Supply voltage: 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Voltage class: 80V
Mounting: SMD
Case: PG-SOT23-6
Supply voltage: 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 75+ | 0.96 EUR |
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| BSC082N10LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPL60R180P6AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP60R180P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPL60R104C7AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB016N06L3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
| IRF6727MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FP25R12W1T7B11BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: AG-EASY1B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: AG-EASY1B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Produkt ist nicht verfügbar
| PVI1050NSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Produkt ist nicht verfügbar
| BSC030N04NSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB011N04LGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
| IPB011N04NGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
| IPD70N10S3L12ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP70N10S312AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 100V; 48A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 100V; 48A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSC070N10NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSC070N10NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFU6215PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ITS4130QEPDXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Supply voltage: 5...45V DC
Number of channels: 4
Case: PG-TSDSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Output current: 1.25A
Kind of output: N-Channel
Turn-off time: 75µs
Power dissipation: 1.8W
Technology: Industrial PROFET
On-state resistance: 0.13Ω
Turn-on time: 75µs
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Supply voltage: 5...45V DC
Number of channels: 4
Case: PG-TSDSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Output current: 1.25A
Kind of output: N-Channel
Turn-off time: 75µs
Power dissipation: 1.8W
Technology: Industrial PROFET
On-state resistance: 0.13Ω
Turn-on time: 75µs
Produkt ist nicht verfügbar
| ITS4140N |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 1827 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 45+ | 1.6 EUR |
| 50+ | 1.43 EUR |
| 58+ | 1.24 EUR |
| 61+ | 1.17 EUR |
| 500+ | 1.13 EUR |
| TLF80511TCATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-3; SMD
Mounting: SMD
Case: PG-TO263-3
Operating temperature: -40...150°C
Kind of package: reel; tape
Input voltage: 3.3...40V
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-3; SMD
Mounting: SMD
Case: PG-TO263-3
Operating temperature: -40...150°C
Kind of package: reel; tape
Input voltage: 3.3...40V
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
| TLF80511TFV50ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Mounting: SMD
Case: DPAK
Operating temperature: -40...150°C
Kind of package: reel; tape
Input voltage: 3.3...40V
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Mounting: SMD
Case: DPAK
Operating temperature: -40...150°C
Kind of package: reel; tape
Input voltage: 3.3...40V
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
auf Bestellung 1632 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 59+ | 1.22 EUR |
| 77+ | 0.93 EUR |
| 81+ | 0.89 EUR |
| 1000+ | 0.86 EUR |
| SAF-XC888LM-8FFI 5V AC |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI x3,UART x3; 5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI x3; UART x3
Supply voltage: 5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI x3,UART x3; 5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI x3; UART x3
Supply voltage: 5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
| XC8866FFI5VACFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
| XC8868FFI5VACFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
| XC8888FFI5VACFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
| XC878M16FFI5VACFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Produkt ist nicht verfügbar