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IR25600PBF IR25600PBF Infineon Technologies ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7 Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
DEVKITNGC1081TOBO1 DEVKITNGC1081TOBO1 Infineon Technologies Infineon-NFC_actuation_sensing_IC_DEV_KIT_NGC1081_evaluation_kit-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187c3e130486596 Description: EVAL BOARD FOR NGC1081
Packaging: Bulk
For Use With/Related Products: NGC1081
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
1+134.08 EUR
CY4541 CY4541 Infineon Technologies Infineon-EZ-PD_CCG4_USB_Type-C_Port_Controller-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7dee9595f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: KIT DEV TYPE C CNTRLR
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Utilized IC / Part: CCG4
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: 2-Channel (Dual)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+463.46 EUR
DSO8CANBOARDTOBO1 Infineon Technologies Description: THE DSO-8 CAN BOARD ENABLES DEVI
Packaging: Bulk
Function: CAN Transceiver
Type: Interface
Utilized IC / Part: TLE9251V
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
MULTICANSBCBOARDTOBO1 Infineon Technologies Description: THIS DEMO BOARD ENABLES DEVICE E
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Utilized IC / Part: TLE9278
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
MULTICANSBCV33BOARDTOBO1 Infineon Technologies Description: THIS DEMO BOARD ENABLES DEVICE E
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Utilized IC / Part: TLE9278
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
KITT2G-B-ELITE Infineon Technologies Description: INTERFACE DEVELOPMENT TOOLS
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Utilized IC / Part: CYT4BF
Produkt ist nicht verfügbar
IKFW75N65ES5XKSA1 IKFW75N65ES5XKSA1 Infineon Technologies Infineon-IKFW75N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972e4191f00 Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/152ns
Switching Energy: 1.48mJ (on), 660µJ (off)
Test Condition: 400V, 60A, 8Ohm, 15V
Gate Charge: 144 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
60+9.39 EUR
Mindestbestellmenge: 60
MR163WBOARDTOBO1 MR163WBOARDTOBO1 Infineon Technologies Part_Number_Guide_Web.pdf Description: EVAL BOARD MR16 3W ILD4035
Packaging: Box
Voltage - Input: 12VAC
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.03 EUR
TT310N20KOFHPSA1 TT310N20KOFHPSA1 Infineon Technologies Infineon-TT310N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fe1884e20 Description: SCR MODULE 2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 446 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2 kV
Produkt ist nicht verfügbar
CYTMA568-56LQI44BBT Infineon Technologies CYTMA568_Summary_RevA_5-26-16.pdf Description: IC MCU 32BIT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
BCX71HE6327HTSA1 BCX71HE6327HTSA1 Infineon Technologies bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 2279990 Stücke:
Lieferzeit 10-14 Tag (e)
6885+0.065 EUR
Mindestbestellmenge: 6885
IPC022N03L3X1SA1 Infineon Technologies DS_IPC022N03L3_2_5.pdf?fileId=db3a30434422e00e01442b91e83f5190 Description: MOSFET N-CH 30V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
IR2183PBF IR2183PBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 3773 Stücke:
Lieferzeit 10-14 Tag (e)
96+5.08 EUR
Mindestbestellmenge: 96
BCX52H6327XTSA1 BCX52H6327XTSA1 Infineon Technologies bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Description: TRANS PNP 60V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 52000 Stücke:
Lieferzeit 10-14 Tag (e)
1893+0.26 EUR
Mindestbestellmenge: 1893
BCX52E6327HTSA1 BCX52E6327HTSA1 Infineon Technologies bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Description: TRANS PNP 60V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3463+0.15 EUR
Mindestbestellmenge: 3463
FF1200R17IP5BPSA1 FF1200R17IP5BPSA1 Infineon Technologies Infineon-FF1200R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07ef5df47f1e Description: IGBT MOD 1700V 1200A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+1310.5 EUR
TT520N22KOFHPSA2 TT520N22KOFHPSA2 Infineon Technologies Infineon-TT520N22KOF-DS-v03_01-en_de.pdf?fileId=5546d461464245d3014666905b5960e7 Description: THYRISTOR MODULE 2200V 520A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 520 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+535.16 EUR
BC849CWH6327XTSA1 BC849CWH6327XTSA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
6804+0.065 EUR
Mindestbestellmenge: 6804
AUIPS72211RTRL AUIPS72211RTRL Infineon Technologies AUIPS72211R-DS-v01_6-3-17.pdf Description: IC PWR SWITCH N-CHAN 1:1 DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BC847AE6327HTSA1 BC847AE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: BJT SOT23 45V NPN 0.25W 150C
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 341204 Stücke:
Lieferzeit 10-14 Tag (e)
8689+0.049 EUR
Mindestbestellmenge: 8689
BTS500071LUAAUMA1 Infineon Technologies Infineon-BTS50007-1LUA-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b1e92a4171dc1 Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 28V
Current - Output (Max): 55A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-5
Fault Protection: Open Load Detect, Over Load, Over Temperature, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BTG70501EPLXUMA1 BTG70501EPLXUMA1 Infineon Technologies Infineon-BTG7050-1EPL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275cd070eee Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Produkt ist nicht verfügbar
BTG70501EPLXUMA1 BTG70501EPLXUMA1 Infineon Technologies Infineon-BTG7050-1EPL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275cd070eee Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.89 EUR
10+ 2.59 EUR
25+ 2.44 EUR
100+ 2.08 EUR
250+ 1.96 EUR
500+ 1.71 EUR
1000+ 1.42 EUR
Mindestbestellmenge: 7
IAUCN04S6N017TATMA1 IAUCN04S6N017TATMA1 Infineon Technologies Infineon-IAUCN04S6N017T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbedb71ed7 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IAUCN04S6N017TATMA1 IAUCN04S6N017TATMA1 Infineon Technologies Infineon-IAUCN04S6N017T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbedb71ed7 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.15 EUR
10+ 2.83 EUR
25+ 2.67 EUR
100+ 2.28 EUR
250+ 2.14 EUR
500+ 1.87 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 6
IRS2334STRPBF IRS2334STRPBF Infineon Technologies irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.28 EUR
Mindestbestellmenge: 1000
SKB04N60ATMA1 SKB04N60ATMA1 Infineon Technologies SKB04N60.pdf Description: IGBT 600V 9.4A 50W TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
330+1.47 EUR
Mindestbestellmenge: 330
IPB070N06N G IPB070N06N G Infineon Technologies IP%28B%2CI%2CP%29070N06N_G.pdf Description: MOSFET N-CHAN D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO263-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
Produkt ist nicht verfügbar
S6E1C32B0AGU1H020 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 30WLCSP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-WLCSP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS21271PBF IRS21271PBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2127PBF IRS2127PBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
152+3.2 EUR
Mindestbestellmenge: 152
IRS20965SPBF IRS20965SPBF Infineon Technologies irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b Description: IC AMP CLASS D MONO 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
IRFU7440PBF IRFU7440PBF Infineon Technologies irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Description: MOSFET N-CH 40V 90A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
auf Bestellung 35929 Stücke:
Lieferzeit 10-14 Tag (e)
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IRFU7440PBF IRFU7440PBF Infineon Technologies irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Description: MOSFET N-CH 40V 90A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
Produkt ist nicht verfügbar
AUIRF1405ZL AUIRF1405ZL Infineon Technologies IRSDS11127-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 150A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
auf Bestellung 420 Stücke:
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AUIRF1405ZL AUIRF1405ZL Infineon Technologies IRSDS11127-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 150A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar
IRFP4332PBFXKMA1 IRFP4332PBFXKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
Produkt ist nicht verfügbar
IMZA75R140M1HXKSA1 IMZA75R140M1HXKSA1 Infineon Technologies Infineon-IMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbd2f131495c Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.75 EUR
10+ 9.65 EUR
30+ 9.12 EUR
120+ 7.91 EUR
Mindestbestellmenge: 2
BGS16MA12E6327XTSA1 BGS16MA12E6327XTSA1 Infineon Technologies Infineon-BGS16MA12-DS-v01_01-EN.pdf?fileId=5546d46265e7dffd0165ed722b7b691e Description: IC RF SWITCH SP6T 6GHZ ATSLP12
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Circuit: SP6T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.3dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-12-10
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
4500+0.42 EUR
9000+ 0.39 EUR
Mindestbestellmenge: 4500
BGS16MA12E6327XTSA1 BGS16MA12E6327XTSA1 Infineon Technologies Infineon-BGS16MA12-DS-v01_01-EN.pdf?fileId=5546d46265e7dffd0165ed722b7b691e Description: IC RF SWITCH SP6T 6GHZ ATSLP12
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Circuit: SP6T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.3dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-12-10
auf Bestellung 11710 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
19+ 0.96 EUR
25+ 0.91 EUR
100+ 0.74 EUR
250+ 0.69 EUR
500+ 0.59 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 16
DDB6U85N16LHOSA1 DDB6U85N16LHOSA1 Infineon Technologies Infineon-DDB6U85N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43147c453fb Description: DIODE MOD GP 1600V 60A AGISOPACK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: AG-ISOPACK-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
auf Bestellung 540 Stücke:
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3+205.89 EUR
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DDB6U180N16RRPB37BPSA1 Infineon Technologies Infineon-DDB6U180N16RRP_B37-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d7f3f7bd50895 Description: LOW POWER ECONO
Packaging: Bulk
auf Bestellung 16 Stücke:
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2+270.52 EUR
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IMT65R072M1HXUMA1 IMT65R072M1HXUMA1 Infineon Technologies Infineon-IMT65R072M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f5d759571ca Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
IMT65R072M1HXUMA1 IMT65R072M1HXUMA1 Infineon Technologies Infineon-IMT65R072M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f5d759571ca Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1994 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.25 EUR
10+ 10.51 EUR
100+ 8.75 EUR
500+ 7.72 EUR
1000+ 6.95 EUR
Mindestbestellmenge: 2
IPC045N10N3X1SA1 Infineon Technologies DS_IPC045N10N3_2_5.pdf?fileId=db3a30434422e00e01442bf093685208 Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
BAW56E6327 BAW56E6327 Infineon Technologies baw56series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c24a4a80438 Description: DIODE ARRAY GP 80V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
auf Bestellung 26306 Stücke:
Lieferzeit 10-14 Tag (e)
13172+0.032 EUR
Mindestbestellmenge: 13172
ND261N26KHPSA1 Infineon Technologies Description: DIODE GP 2.6KV 260A PB50ND-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 260A
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
Produkt ist nicht verfügbar
SPU30P06P SPU30P06P Infineon Technologies SPD30P06P_310702.pdf Description: MOSFET P-CH 60V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 21.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 25 V
auf Bestellung 598 Stücke:
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598+0.88 EUR
Mindestbestellmenge: 598
CY7C2665KV18-550BZXC CY7C2665KV18-550BZXC Infineon Technologies Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C2665KV18-550BZXI CY7C2665KV18-550BZXI Infineon Technologies Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
DDB2U20N12W1RFB11BPSA1 DDB2U20N12W1RFB11BPSA1 Infineon Technologies Infineon-DDB2U20N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f0179794dde9f5179 Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
auf Bestellung 24 Stücke:
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6+93.54 EUR
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DDB2U40N12W1RFB11BPSA1 DDB2U40N12W1RFB11BPSA1 Infineon Technologies Infineon-DDB2U40N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f01797956e82d517c Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
4+138.52 EUR
Mindestbestellmenge: 4
F4250R07W2H5FB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
1+77.09 EUR
15+ 68.68 EUR
DF225R12W2H3FB11BPSA1 DF225R12W2H3FB11BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
1+144.48 EUR
15+ 131.89 EUR
F43L50R07W2H3FB11BPSA2 F43L50R07W2H3FB11BPSA2 Infineon Technologies Infineon-F4-3L50R07W2H3F_B11-DataSheet-v03_01-EN.pdf?fileId=5546d4625bd71aa0015bfb712d9c6e9e Description: IGBT MOD 650V 50A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
4+157.11 EUR
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IAUC120N04S6N008ATMA1 Infineon Technologies Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPB160N04S2L03ATMA2 IPB160N04S2L03ATMA2 Infineon Technologies Infineon-IPB160N04S2L_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b99f14568 Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.61 EUR
Mindestbestellmenge: 3
IPB160N04S3H2ATMA1 IPB160N04S3H2ATMA1 Infineon Technologies Infineon-IPB160N04S3_H2-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b8da04548&ack=t Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)
139+3.5 EUR
Mindestbestellmenge: 139
CY7C1021D-10ZSXI CY7C1021D-10ZSXI Infineon Technologies download description Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.3 EUR
10+ 6.62 EUR
25+ 6.47 EUR
40+ 6.44 EUR
135+ 5.77 EUR
270+ 5.75 EUR
540+ 5.54 EUR
Mindestbestellmenge: 3
IR25600PBF ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7
IR25600PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
DEVKITNGC1081TOBO1 Infineon-NFC_actuation_sensing_IC_DEV_KIT_NGC1081_evaluation_kit-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187c3e130486596
DEVKITNGC1081TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR NGC1081
Packaging: Bulk
For Use With/Related Products: NGC1081
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+134.08 EUR
CY4541 Infineon-EZ-PD_CCG4_USB_Type-C_Port_Controller-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7dee9595f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY4541
Hersteller: Infineon Technologies
Description: KIT DEV TYPE C CNTRLR
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Utilized IC / Part: CCG4
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: 2-Channel (Dual)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+463.46 EUR
DSO8CANBOARDTOBO1
Hersteller: Infineon Technologies
Description: THE DSO-8 CAN BOARD ENABLES DEVI
Packaging: Bulk
Function: CAN Transceiver
Type: Interface
Utilized IC / Part: TLE9251V
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
MULTICANSBCBOARDTOBO1
Hersteller: Infineon Technologies
Description: THIS DEMO BOARD ENABLES DEVICE E
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Utilized IC / Part: TLE9278
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
MULTICANSBCV33BOARDTOBO1
Hersteller: Infineon Technologies
Description: THIS DEMO BOARD ENABLES DEVICE E
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Utilized IC / Part: TLE9278
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
KITT2G-B-ELITE
Hersteller: Infineon Technologies
Description: INTERFACE DEVELOPMENT TOOLS
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Utilized IC / Part: CYT4BF
Produkt ist nicht verfügbar
IKFW75N65ES5XKSA1 Infineon-IKFW75N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972e4191f00
IKFW75N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/152ns
Switching Energy: 1.48mJ (on), 660µJ (off)
Test Condition: 400V, 60A, 8Ohm, 15V
Gate Charge: 144 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
60+9.39 EUR
Mindestbestellmenge: 60
MR163WBOARDTOBO1 Part_Number_Guide_Web.pdf
MR163WBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD MR16 3W ILD4035
Packaging: Box
Voltage - Input: 12VAC
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+32.03 EUR
TT310N20KOFHPSA1 Infineon-TT310N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fe1884e20
TT310N20KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 446 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2 kV
Produkt ist nicht verfügbar
CYTMA568-56LQI44BBT CYTMA568_Summary_RevA_5-26-16.pdf
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
BCX71HE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
BCX71HE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 2279990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6885+0.065 EUR
Mindestbestellmenge: 6885
IPC022N03L3X1SA1 DS_IPC022N03L3_2_5.pdf?fileId=db3a30434422e00e01442b91e83f5190
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
IR2183PBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR2183PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 3773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
96+5.08 EUR
Mindestbestellmenge: 96
BCX52H6327XTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
BCX52H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 60V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 52000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1893+0.26 EUR
Mindestbestellmenge: 1893
BCX52E6327HTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
BCX52E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 60V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3463+0.15 EUR
Mindestbestellmenge: 3463
FF1200R17IP5BPSA1 Infineon-FF1200R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07ef5df47f1e
FF1200R17IP5BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1200A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1310.5 EUR
TT520N22KOFHPSA2 Infineon-TT520N22KOF-DS-v03_01-en_de.pdf?fileId=5546d461464245d3014666905b5960e7
TT520N22KOFHPSA2
Hersteller: Infineon Technologies
Description: THYRISTOR MODULE 2200V 520A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 520 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+535.16 EUR
BC849CWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC849CWH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6804+0.065 EUR
Mindestbestellmenge: 6804
AUIPS72211RTRL AUIPS72211R-DS-v01_6-3-17.pdf
AUIPS72211RTRL
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BC847AE6327HTSA1 fundamentals-of-power-semiconductors
BC847AE6327HTSA1
Hersteller: Infineon Technologies
Description: BJT SOT23 45V NPN 0.25W 150C
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 341204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8689+0.049 EUR
Mindestbestellmenge: 8689
BTS500071LUAAUMA1 Infineon-BTS50007-1LUA-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b1e92a4171dc1
Hersteller: Infineon Technologies
Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 28V
Current - Output (Max): 55A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-5
Fault Protection: Open Load Detect, Over Load, Over Temperature, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BTG70501EPLXUMA1 Infineon-BTG7050-1EPL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275cd070eee
BTG70501EPLXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Produkt ist nicht verfügbar
BTG70501EPLXUMA1 Infineon-BTG7050-1EPL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275cd070eee
BTG70501EPLXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.89 EUR
10+ 2.59 EUR
25+ 2.44 EUR
100+ 2.08 EUR
250+ 1.96 EUR
500+ 1.71 EUR
1000+ 1.42 EUR
Mindestbestellmenge: 7
IAUCN04S6N017TATMA1 Infineon-IAUCN04S6N017T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbedb71ed7
IAUCN04S6N017TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IAUCN04S6N017TATMA1 Infineon-IAUCN04S6N017T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbedb71ed7
IAUCN04S6N017TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.15 EUR
10+ 2.83 EUR
25+ 2.67 EUR
100+ 2.28 EUR
250+ 2.14 EUR
500+ 1.87 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 6
IRS2334STRPBF irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b
IRS2334STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+2.28 EUR
Mindestbestellmenge: 1000
SKB04N60ATMA1 SKB04N60.pdf
SKB04N60ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 9.4A 50W TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
330+1.47 EUR
Mindestbestellmenge: 330
IPB070N06N G IP%28B%2CI%2CP%29070N06N_G.pdf
IPB070N06N G
Hersteller: Infineon Technologies
Description: MOSFET N-CHAN D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO263-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
Produkt ist nicht verfügbar
S6E1C32B0AGU1H020 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 30WLCSP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-WLCSP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS21271PBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS21271PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRS2127PBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS2127PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
152+3.2 EUR
Mindestbestellmenge: 152
IRS20965SPBF irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b
IRS20965SPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
IRFU7440PBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
IRFU7440PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
auf Bestellung 35929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
409+1.2 EUR
Mindestbestellmenge: 409
IRFU7440PBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
IRFU7440PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
Produkt ist nicht verfügbar
AUIRF1405ZL IRSDS11127-1.pdf?t.download=true&u=5oefqw
AUIRF1405ZL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 150A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
184+2.64 EUR
Mindestbestellmenge: 184
AUIRF1405ZL IRSDS11127-1.pdf?t.download=true&u=5oefqw
AUIRF1405ZL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 150A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar
IRFP4332PBFXKMA1
IRFP4332PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
Produkt ist nicht verfügbar
IMZA75R140M1HXKSA1 Infineon-IMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbd2f131495c
IMZA75R140M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.75 EUR
10+ 9.65 EUR
30+ 9.12 EUR
120+ 7.91 EUR
Mindestbestellmenge: 2
BGS16MA12E6327XTSA1 Infineon-BGS16MA12-DS-v01_01-EN.pdf?fileId=5546d46265e7dffd0165ed722b7b691e
BGS16MA12E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP6T 6GHZ ATSLP12
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Circuit: SP6T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.3dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-12-10
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4500+0.42 EUR
9000+ 0.39 EUR
Mindestbestellmenge: 4500
BGS16MA12E6327XTSA1 Infineon-BGS16MA12-DS-v01_01-EN.pdf?fileId=5546d46265e7dffd0165ed722b7b691e
BGS16MA12E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP6T 6GHZ ATSLP12
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Circuit: SP6T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.3dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-12-10
auf Bestellung 11710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.11 EUR
19+ 0.96 EUR
25+ 0.91 EUR
100+ 0.74 EUR
250+ 0.69 EUR
500+ 0.59 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 16
DDB6U85N16LHOSA1 Infineon-DDB6U85N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43147c453fb
DDB6U85N16LHOSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1600V 60A AGISOPACK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: AG-ISOPACK-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+205.89 EUR
Mindestbestellmenge: 3
DDB6U180N16RRPB37BPSA1 Infineon-DDB6U180N16RRP_B37-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d7f3f7bd50895
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Bulk
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+270.52 EUR
Mindestbestellmenge: 2
IMT65R072M1HXUMA1 Infineon-IMT65R072M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f5d759571ca
IMT65R072M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
IMT65R072M1HXUMA1 Infineon-IMT65R072M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f5d759571ca
IMT65R072M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.25 EUR
10+ 10.51 EUR
100+ 8.75 EUR
500+ 7.72 EUR
1000+ 6.95 EUR
Mindestbestellmenge: 2
IPC045N10N3X1SA1 DS_IPC045N10N3_2_5.pdf?fileId=db3a30434422e00e01442bf093685208
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
BAW56E6327 baw56series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c24a4a80438
BAW56E6327
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
auf Bestellung 26306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13172+0.032 EUR
Mindestbestellmenge: 13172
ND261N26KHPSA1
Hersteller: Infineon Technologies
Description: DIODE GP 2.6KV 260A PB50ND-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 260A
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
Produkt ist nicht verfügbar
SPU30P06P SPD30P06P_310702.pdf
SPU30P06P
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 21.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 25 V
auf Bestellung 598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
598+0.88 EUR
Mindestbestellmenge: 598
CY7C2665KV18-550BZXC Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711
CY7C2665KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY7C2665KV18-550BZXI Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711
CY7C2665KV18-550BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
DDB2U20N12W1RFB11BPSA1 Infineon-DDB2U20N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f0179794dde9f5179
DDB2U20N12W1RFB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+93.54 EUR
Mindestbestellmenge: 6
DDB2U40N12W1RFB11BPSA1 Infineon-DDB2U40N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f01797956e82d517c
DDB2U40N12W1RFB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+138.52 EUR
Mindestbestellmenge: 4
F4250R07W2H5FB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+77.09 EUR
15+ 68.68 EUR
DF225R12W2H3FB11BPSA1
DF225R12W2H3FB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+144.48 EUR
15+ 131.89 EUR
F43L50R07W2H3FB11BPSA2 Infineon-F4-3L50R07W2H3F_B11-DataSheet-v03_01-EN.pdf?fileId=5546d4625bd71aa0015bfb712d9c6e9e
F43L50R07W2H3FB11BPSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 50A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+157.11 EUR
Mindestbestellmenge: 4
IAUC120N04S6N008ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPB160N04S2L03ATMA2 Infineon-IPB160N04S2L_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b99f14568
IPB160N04S2L03ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.61 EUR
Mindestbestellmenge: 3
IPB160N04S3H2ATMA1 Infineon-IPB160N04S3_H2-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b8da04548&ack=t
IPB160N04S3H2ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
139+3.5 EUR
Mindestbestellmenge: 139
CY7C1021D-10ZSXI description download
CY7C1021D-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.3 EUR
10+ 6.62 EUR
25+ 6.47 EUR
40+ 6.44 EUR
135+ 5.77 EUR
270+ 5.75 EUR
540+ 5.54 EUR
Mindestbestellmenge: 3
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