Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (138877) > Seite 703 nach 2315

Wählen Sie Seite:   [  << Vorherige Seite ]  1 231 462 693 698 699 700 701 702 703 704 705 706 707 708 924 1155 1386 1617 1848 2079 2310 2315  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
ISC015N06NM5LFATMA1 ISC015N06NM5LFATMA1 Infineon Technologies Description: OPTIMOSTM5LINEARFET60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 275A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.45V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 30 V
Produkt ist nicht verfügbar
ISC015N06NM5LFATMA1 ISC015N06NM5LFATMA1 Infineon Technologies Description: OPTIMOSTM5LINEARFET60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 275A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.45V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 30 V
Produkt ist nicht verfügbar
TLE493DW2B6A0HTSA2 Infineon Technologies TLE493D-W2B6_v1.2_4-9-19.pdf Description: POSITION&CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
S25FS256TDACHC113 S25FS256TDACHC113 Infineon Technologies Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t Description: IC FLSH 256MBIT SPI/QUAD 33WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 33-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 33-WLCSP (3.36x3.97)
Write Cycle Time - Word, Page: 2.3ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
Produkt ist nicht verfügbar
S25FS256TDACHC113 S25FS256TDACHC113 Infineon Technologies Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t Description: IC FLSH 256MBIT SPI/QUAD 33WLCSP
Packaging: Cut Tape (CT)
Package / Case: 33-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 33-WLCSP (3.36x3.97)
Write Cycle Time - Word, Page: 2.3ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
auf Bestellung 4576 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.79 EUR
10+ 8.94 EUR
25+ 8.77 EUR
50+ 8.7 EUR
100+ 7.81 EUR
250+ 7.78 EUR
500+ 7.29 EUR
1000+ 6.98 EUR
Mindestbestellmenge: 2
IRF7328TRPBFXTMA1 IRF7328TRPBFXTMA1 Infineon Technologies Description: MOSFET 2P-CH 30V 8A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-DSO-8-902
Produkt ist nicht verfügbar
FP40R12KT3BOSA1 FP40R12KT3BOSA1 Infineon Technologies Infineon-FP40R12KT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4316d775442 Description: IGBT MOD 1200V 55A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
4+129.04 EUR
Mindestbestellmenge: 4
DDB2U60N07W1RFB58BPSA1 Infineon Technologies DDB2U60N07W1RF_B58_Rev1.00_8-24-23.pdf Description: EASY STANDARD
Packaging: Tray
Produkt ist nicht verfügbar
CY2309SXC-1HT CY2309SXC-1HT Infineon Technologies Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY2309SXC-1HT CY2309SXC-1HT Infineon Technologies Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S25FL256SAGMFVR01 S25FL256SAGMFVR01 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.84 EUR
10+ 8.97 EUR
25+ 8.8 EUR
50+ 8.74 EUR
Mindestbestellmenge: 2
BCW61BE6327HTSA1 BCW61BE6327HTSA1 Infineon Technologies bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 547960 Stücke:
Lieferzeit 10-14 Tag (e)
6885+0.065 EUR
Mindestbestellmenge: 6885
BCW61CE6327HTSA1 BCW61CE6327HTSA1 Infineon Technologies bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 56972 Stücke:
Lieferzeit 10-14 Tag (e)
6885+0.063 EUR
Mindestbestellmenge: 6885
CYW20835PB1KML1GGFT CYW20835PB1KML1GGFT Infineon Technologies Description: BLUE TOOTH DUAL MODE
Packaging: Tape & Reel (TR)
Package / Case: 60-VFQFN Exposed Pad
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 384kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.625V ~ 3.63V
Power - Output: 12dBm
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Data Rate (Max): 6Mbps
Current - Transmitting: 18mA
Supplier Device Package: PG-VQFN-60-800
GPIO: 39
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Produkt ist nicht verfügbar
IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Infineon Technologies Infineon-IPU80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c201e1f424685 Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 1425 Stücke:
Lieferzeit 10-14 Tag (e)
597+0.82 EUR
Mindestbestellmenge: 597
IPS80R1K2P7AKMA1 IPS80R1K2P7AKMA1 Infineon Technologies Infineon-IPS80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c10e1c32f3ed0 Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 49500 Stücke:
Lieferzeit 10-14 Tag (e)
597+0.82 EUR
Mindestbestellmenge: 597
SLS32AIA010MKUSON10XTMA3 Infineon Technologies Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
SLS32AIA010MKUSON10XTMA3 Infineon Technologies Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
CY62157EV30LL-45BVI CY62157EV30LL-45BVI Infineon Technologies Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.63 EUR
10+ 14.47 EUR
25+ 14.15 EUR
40+ 14.07 EUR
80+ 12.39 EUR
230+ 11.77 EUR
Mindestbestellmenge: 2
PXE1610CDNPMFB10XTMA1 PXE1610CDNPMFB10XTMA1 Infineon Technologies Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a Description: PXE1610CDN - DIGITAL DUAL OUTPUT
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: 48-VQFN (6x6)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
268+1.8 EUR
Mindestbestellmenge: 268
PXE1610CDNPMFD10XTMA1 PXE1610CDNPMFD10XTMA1 Infineon Technologies Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a Description: PXE1610CDN - DIGITAL DUAL OUTPUT
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: 48-VQFN (6x6)
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
189+2.56 EUR
Mindestbestellmenge: 189
PXE1610CDNG023XTMA1 PXE1610CDNG023XTMA1 Infineon Technologies Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a Description: PXE1610CDN - DIGITAL DUAL OUTPUT
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: 48-VQFN (6x6)
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
87+5.58 EUR
Mindestbestellmenge: 87
BTG7016A1EPWXUMA1 BTG7016A1EPWXUMA1 Infineon Technologies Infineon-BTG7016A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee0efad71e67 Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BTG7016A1EPWXUMA1 BTG7016A1EPWXUMA1 Infineon Technologies Infineon-BTG7016A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee0efad71e67 Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2624 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.82 EUR
10+ 3.44 EUR
25+ 3.25 EUR
100+ 2.77 EUR
250+ 2.6 EUR
500+ 2.27 EUR
1000+ 1.88 EUR
Mindestbestellmenge: 5
FS100R12W2T7BOMA1 FS100R12W2T7BOMA1 Infineon Technologies Infineon-FS100R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e Description: LOW POWER EASY AG-EASY2B-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 481 Stücke:
Lieferzeit 10-14 Tag (e)
4+131.43 EUR
Mindestbestellmenge: 4
FP15R12W1T7PB11BPSA1 FP15R12W1T7PB11BPSA1 Infineon Technologies Infineon-FP15R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742686806765b2 Description: LOW POWER EASY AG-EASY1B-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
7+70.11 EUR
Mindestbestellmenge: 7
FS25R12W1T7B11BOMA1 FS25R12W1T7B11BOMA1 Infineon Technologies Infineon-FS25R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f186359472e9 Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)
10+50.92 EUR
Mindestbestellmenge: 10
IR3820MTRPBF IR3820MTRPBF Infineon Technologies IR3820MPbF.pdf Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
BCW60FFE6327HTSA1 BCW60FFE6327HTSA1 Infineon Technologies BCW60%2C%20BCX70%20Rev2007.pdf Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)
5852+0.079 EUR
Mindestbestellmenge: 5852
IDWD40E120D7XKSA1 IDWD40E120D7XKSA1 Infineon Technologies IDWD40E120D7_Rev1.00_12-15-23.pdf Description: DIODE GEN PURP 1200V 67A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 155 ns
Technology: Standard
Current - Average Rectified (Io): 67A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.88 EUR
10+ 6.17 EUR
25+ 5.84 EUR
Mindestbestellmenge: 3
TLE5046ICPWM2ER100HALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: TLE504HiEGWheSpeSenswidirectidet
Packaging: Bulk
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
192+2.48 EUR
Mindestbestellmenge: 192
TLE50452IC50XTMA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
TLE50452IC100XTMA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IR2135JTRPBF IR2135JTRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IR2135JTRPBF IR2135JTRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.33 EUR
10+ 12.95 EUR
25+ 12.35 EUR
Mindestbestellmenge: 2
IR21363JTRPBF IR21363JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IR21363JTRPBF IR21363JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.8 EUR
10+ 11.56 EUR
25+ 11.02 EUR
100+ 9.57 EUR
250+ 9.14 EUR
Mindestbestellmenge: 2
IR2136PBF IR2136PBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 3882 Stücke:
Lieferzeit 10-14 Tag (e)
89+5.49 EUR
Mindestbestellmenge: 89
IR21368STRPBF IR21368STRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 17961 Stücke:
Lieferzeit 10-14 Tag (e)
72+6.77 EUR
Mindestbestellmenge: 72
IR2131SPBF IR2131SPBF Infineon Technologies ir2131.pdf?fileId=5546d462533600a4015355c882d7169d description Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 6229 Stücke:
Lieferzeit 10-14 Tag (e)
54+9.19 EUR
Mindestbestellmenge: 54
IR2131JTRPBF IR2131JTRPBF Infineon Technologies ir2131.pdf?fileId=5546d462533600a4015355c882d7169d Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IR2131JTRPBF IR2131JTRPBF Infineon Technologies ir2131.pdf?fileId=5546d462533600a4015355c882d7169d Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 491 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.68 EUR
10+ 14.17 EUR
25+ 13.51 EUR
100+ 11.73 EUR
250+ 11.2 EUR
Mindestbestellmenge: 2
CY7C1353S-100AXCT CY7C1353S-100AXCT Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SP370251160XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: SENSOR TIRE PRESSURE DIGITAL
Packaging: Tape & Reel (TR)
Output Type: Digital
Operating Temperature: -40°C ~ 125°C
Sensor Type: Tire Pressure Monitoring (TPMS)
Produkt ist nicht verfügbar
BSP149L6906HTSA1 BSP149L6906HTSA1 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 115202 Stücke:
Lieferzeit 10-14 Tag (e)
416+1.14 EUR
Mindestbestellmenge: 416
BCX6810H6327XTSA1 BCX6810H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BCX6810H6327XTSA1 BCX6810H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
1224+0.41 EUR
Mindestbestellmenge: 1224
BCX6825H6327XTSA1 BCX6825H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FF1200R17IP5PBPSA1 FF1200R17IP5PBPSA1 Infineon Technologies Infineon-FF1200R17IP5P-DataSheet-v03_00-EN.pdf?fileId=5546d4627448fb2b017457d84aae414b Description: IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
1+1133.69 EUR
DF200R12KE3HOSA1 DF200R12KE3HOSA1 Infineon Technologies Infineon-DF200R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ab75550c Description: IGBT MODULE 1200V 1040W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1040 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
3+177.72 EUR
Mindestbestellmenge: 3
FP100R12W3T7B11BPSA1 FP100R12W3T7B11BPSA1 Infineon Technologies Infineon-FP100R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b14a703900 Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
3+189.19 EUR
Mindestbestellmenge: 3
FF300R12KT3HOSA1 FF300R12KT3HOSA1 Infineon Technologies Infineon-FF300R12KT3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4345e3e6019 Description: IGBT MOD 1200V 480A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)
2+254.51 EUR
Mindestbestellmenge: 2
FP100R12KT4B11BOSA1 FP100R12KT4B11BOSA1 Infineon Technologies Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18 Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
2+249.85 EUR
Mindestbestellmenge: 2
BGSF18DM20E6327XUMA1 BGSF18DM20E6327XUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF SWITCH SP8T
Packaging: Bulk
Circuit: SP8T
RF Type: Cellular, 3G, GSM
auf Bestellung 4287 Stücke:
Lieferzeit 10-14 Tag (e)
353+1.34 EUR
Mindestbestellmenge: 353
FF1800XTR17T2P5BPSA1 FF1800XTR17T2P5BPSA1 Infineon Technologies Infineon-FF1800XTR17T2P5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c4ca458f81d4c Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 84000 pF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
1+1823.43 EUR
CYW20738A2KML3G CYW20738A2KML3G Infineon Technologies BCM20738_RevC_Oct18%2C2016.pdf Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.2V
Power - Output: 4dBm
Protocol: Bluetooth v4.0
Current - Receiving: 26.8mA
Data Rate (Max): 1Mbps
Current - Transmitting: 26.9mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 22
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPP80N06S4L07AKSA1 IPP80N06S4L07AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80 Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
auf Bestellung 3692 Stücke:
Lieferzeit 10-14 Tag (e)
770+0.62 EUR
Mindestbestellmenge: 770
IPP80N06S405AKSA2 IPP80N06S405AKSA2 Infineon Technologies IPx80N06S4-05_Rev1.0_2009-03-24.pdf Description: MOSFET N-CHANNEL_55/60V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 18500 Stücke:
Lieferzeit 10-14 Tag (e)
473+1.01 EUR
Mindestbestellmenge: 473
IPP80N06S2L06AKSA1 IPP80N06S2L06AKSA1 Infineon Technologies IPB%2CIPP80N06S2L-06.pdf Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
auf Bestellung 19000 Stücke:
Lieferzeit 10-14 Tag (e)
392+1.22 EUR
Mindestbestellmenge: 392
IPP80N06S207AKSA1 IPP80N06S207AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
392+1.22 EUR
Mindestbestellmenge: 392
ISC015N06NM5LFATMA1
ISC015N06NM5LFATMA1
Hersteller: Infineon Technologies
Description: OPTIMOSTM5LINEARFET60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 275A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.45V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 30 V
Produkt ist nicht verfügbar
ISC015N06NM5LFATMA1
ISC015N06NM5LFATMA1
Hersteller: Infineon Technologies
Description: OPTIMOSTM5LINEARFET60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 275A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.45V @ 120µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 30 V
Produkt ist nicht verfügbar
TLE493DW2B6A0HTSA2 TLE493D-W2B6_v1.2_4-9-19.pdf
Hersteller: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
S25FS256TDACHC113 Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t
S25FS256TDACHC113
Hersteller: Infineon Technologies
Description: IC FLSH 256MBIT SPI/QUAD 33WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 33-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 33-WLCSP (3.36x3.97)
Write Cycle Time - Word, Page: 2.3ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
Produkt ist nicht verfügbar
S25FS256TDACHC113 Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t
S25FS256TDACHC113
Hersteller: Infineon Technologies
Description: IC FLSH 256MBIT SPI/QUAD 33WLCSP
Packaging: Cut Tape (CT)
Package / Case: 33-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 33-WLCSP (3.36x3.97)
Write Cycle Time - Word, Page: 2.3ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
auf Bestellung 4576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.79 EUR
10+ 8.94 EUR
25+ 8.77 EUR
50+ 8.7 EUR
100+ 7.81 EUR
250+ 7.78 EUR
500+ 7.29 EUR
1000+ 6.98 EUR
Mindestbestellmenge: 2
IRF7328TRPBFXTMA1
IRF7328TRPBFXTMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 8A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-DSO-8-902
Produkt ist nicht verfügbar
FP40R12KT3BOSA1 Infineon-FP40R12KT3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4316d775442
FP40R12KT3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 55A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+129.04 EUR
Mindestbestellmenge: 4
DDB2U60N07W1RFB58BPSA1 DDB2U60N07W1RF_B58_Rev1.00_8-24-23.pdf
Hersteller: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
Produkt ist nicht verfügbar
CY2309SXC-1HT Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2309SXC-1HT
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY2309SXC-1HT Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2309SXC-1HT
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S25FL256SAGMFVR01 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGMFVR01
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.84 EUR
10+ 8.97 EUR
25+ 8.8 EUR
50+ 8.74 EUR
Mindestbestellmenge: 2
BCW61BE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
BCW61BE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 547960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6885+0.065 EUR
Mindestbestellmenge: 6885
BCW61CE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
BCW61CE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 56972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6885+0.063 EUR
Mindestbestellmenge: 6885
CYW20835PB1KML1GGFT
CYW20835PB1KML1GGFT
Hersteller: Infineon Technologies
Description: BLUE TOOTH DUAL MODE
Packaging: Tape & Reel (TR)
Package / Case: 60-VFQFN Exposed Pad
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 384kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.625V ~ 3.63V
Power - Output: 12dBm
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Data Rate (Max): 6Mbps
Current - Transmitting: 18mA
Supplier Device Package: PG-VQFN-60-800
GPIO: 39
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Produkt ist nicht verfügbar
IPU80R1K2P7AKMA1 Infineon-IPU80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c201e1f424685
IPU80R1K2P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 1425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
597+0.82 EUR
Mindestbestellmenge: 597
IPS80R1K2P7AKMA1 Infineon-IPS80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c10e1c32f3ed0
IPS80R1K2P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 49500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
597+0.82 EUR
Mindestbestellmenge: 597
SLS32AIA010MKUSON10XTMA3
Hersteller: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
SLS32AIA010MKUSON10XTMA3
Hersteller: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
CY62157EV30LL-45BVI Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
CY62157EV30LL-45BVI
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.63 EUR
10+ 14.47 EUR
25+ 14.15 EUR
40+ 14.07 EUR
80+ 12.39 EUR
230+ 11.77 EUR
Mindestbestellmenge: 2
PXE1610CDNPMFB10XTMA1 Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a
PXE1610CDNPMFB10XTMA1
Hersteller: Infineon Technologies
Description: PXE1610CDN - DIGITAL DUAL OUTPUT
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: 48-VQFN (6x6)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
268+1.8 EUR
Mindestbestellmenge: 268
PXE1610CDNPMFD10XTMA1 Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a
PXE1610CDNPMFD10XTMA1
Hersteller: Infineon Technologies
Description: PXE1610CDN - DIGITAL DUAL OUTPUT
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: 48-VQFN (6x6)
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
189+2.56 EUR
Mindestbestellmenge: 189
PXE1610CDNG023XTMA1 Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a
PXE1610CDNG023XTMA1
Hersteller: Infineon Technologies
Description: PXE1610CDN - DIGITAL DUAL OUTPUT
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: 48-VQFN (6x6)
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
87+5.58 EUR
Mindestbestellmenge: 87
BTG7016A1EPWXUMA1 Infineon-BTG7016A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee0efad71e67
BTG7016A1EPWXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BTG7016A1EPWXUMA1 Infineon-BTG7016A-1EPW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cee0efad71e67
BTG7016A1EPWXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.82 EUR
10+ 3.44 EUR
25+ 3.25 EUR
100+ 2.77 EUR
250+ 2.6 EUR
500+ 2.27 EUR
1000+ 1.88 EUR
Mindestbestellmenge: 5
FS100R12W2T7BOMA1 Infineon-FS100R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e
FS100R12W2T7BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 481 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+131.43 EUR
Mindestbestellmenge: 4
FP15R12W1T7PB11BPSA1 Infineon-FP15R12W1T7P_B11-DataSheet-v00_10-EN.pdf?fileId=5546d46273a5366f01742686806765b2
FP15R12W1T7PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 µA
Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+70.11 EUR
Mindestbestellmenge: 7
FS25R12W1T7B11BOMA1 Infineon-FS25R12W1T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f186359472e9
FS25R12W1T7B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+50.92 EUR
Mindestbestellmenge: 10
IR3820MTRPBF IR3820MPbF.pdf
IR3820MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
BCW60FFE6327HTSA1 BCW60%2C%20BCX70%20Rev2007.pdf
BCW60FFE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5852+0.079 EUR
Mindestbestellmenge: 5852
IDWD40E120D7XKSA1 IDWD40E120D7_Rev1.00_12-15-23.pdf
IDWD40E120D7XKSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1200V 67A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 155 ns
Technology: Standard
Current - Average Rectified (Io): 67A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.88 EUR
10+ 6.17 EUR
25+ 5.84 EUR
Mindestbestellmenge: 3
TLE5046ICPWM2ER100HALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
Hersteller: Infineon Technologies
Description: TLE504HiEGWheSpeSenswidirectidet
Packaging: Bulk
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
192+2.48 EUR
Mindestbestellmenge: 192
TLE50452IC50XTMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
TLE50452IC100XTMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IR2135JTRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IR2135JTRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.33 EUR
10+ 12.95 EUR
25+ 12.35 EUR
Mindestbestellmenge: 2
IR21363JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR21363JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IR21363JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR21363JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.8 EUR
10+ 11.56 EUR
25+ 11.02 EUR
100+ 9.57 EUR
250+ 9.14 EUR
Mindestbestellmenge: 2
IR2136PBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR2136PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 3882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
89+5.49 EUR
Mindestbestellmenge: 89
IR21368STRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR21368STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 17961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
72+6.77 EUR
Mindestbestellmenge: 72
IR2131SPBF description ir2131.pdf?fileId=5546d462533600a4015355c882d7169d
IR2131SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 6229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
54+9.19 EUR
Mindestbestellmenge: 54
IR2131JTRPBF ir2131.pdf?fileId=5546d462533600a4015355c882d7169d
IR2131JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IR2131JTRPBF ir2131.pdf?fileId=5546d462533600a4015355c882d7169d
IR2131JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 491 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.68 EUR
10+ 14.17 EUR
25+ 13.51 EUR
100+ 11.73 EUR
250+ 11.2 EUR
Mindestbestellmenge: 2
CY7C1353S-100AXCT
CY7C1353S-100AXCT
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SP370251160XTMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: SENSOR TIRE PRESSURE DIGITAL
Packaging: Tape & Reel (TR)
Output Type: Digital
Operating Temperature: -40°C ~ 125°C
Sensor Type: Tire Pressure Monitoring (TPMS)
Produkt ist nicht verfügbar
BSP149L6906HTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149L6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 115202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
416+1.14 EUR
Mindestbestellmenge: 416
BCX6810H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6810H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BCX6810H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6810H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1224+0.41 EUR
Mindestbestellmenge: 1224
BCX6825H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6825H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FF1200R17IP5PBPSA1 Infineon-FF1200R17IP5P-DataSheet-v03_00-EN.pdf?fileId=5546d4627448fb2b017457d84aae414b
FF1200R17IP5PBPSA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1133.69 EUR
DF200R12KE3HOSA1 Infineon-DF200R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ab75550c
DF200R12KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1040W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1040 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+177.72 EUR
Mindestbestellmenge: 3
FP100R12W3T7B11BPSA1 Infineon-FP100R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b14a703900
FP100R12W3T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+189.19 EUR
Mindestbestellmenge: 3
FF300R12KT3HOSA1 Infineon-FF300R12KT3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4345e3e6019
FF300R12KT3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 480A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+254.51 EUR
Mindestbestellmenge: 2
FP100R12KT4B11BOSA1 Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18
FP100R12KT4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+249.85 EUR
Mindestbestellmenge: 2
BGSF18DM20E6327XUMA1 fundamentals-of-power-semiconductors
BGSF18DM20E6327XUMA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP8T
Packaging: Bulk
Circuit: SP8T
RF Type: Cellular, 3G, GSM
auf Bestellung 4287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
353+1.34 EUR
Mindestbestellmenge: 353
FF1800XTR17T2P5BPSA1 Infineon-FF1800XTR17T2P5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c4ca458f81d4c
FF1800XTR17T2P5BPSA1
Hersteller: Infineon Technologies
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 84000 pF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1823.43 EUR
CYW20738A2KML3G BCM20738_RevC_Oct18%2C2016.pdf
CYW20738A2KML3G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.2V
Power - Output: 4dBm
Protocol: Bluetooth v4.0
Current - Receiving: 26.8mA
Data Rate (Max): 1Mbps
Current - Transmitting: 26.9mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 22
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPP80N06S4L07AKSA1 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80
IPP80N06S4L07AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
auf Bestellung 3692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
770+0.62 EUR
Mindestbestellmenge: 770
IPP80N06S405AKSA2 IPx80N06S4-05_Rev1.0_2009-03-24.pdf
IPP80N06S405AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_55/60V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 18500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
473+1.01 EUR
Mindestbestellmenge: 473
IPP80N06S2L06AKSA1 IPB%2CIPP80N06S2L-06.pdf
IPP80N06S2L06AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
auf Bestellung 19000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
392+1.22 EUR
Mindestbestellmenge: 392
IPP80N06S207AKSA1 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t
IPP80N06S207AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
392+1.22 EUR
Mindestbestellmenge: 392
Wählen Sie Seite:   [  << Vorherige Seite ]  1 231 462 693 698 699 700 701 702 703 704 705 706 707 708 924 1155 1386 1617 1848 2079 2310 2315  [ Nächste Seite >> ]