BSP149L6906HTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 115202 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 416+ | 1.14 EUR |
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Technische Details BSP149L6906HTSA1 Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 660mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 400µA, Supplier Device Package: PG-SOT223-4-21, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V.
Weitere Produktangebote BSP149L6906HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BSP149L6906HTSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSP149L6906HTSA1 - BSP149 60V-600V N-CHANNEL DEPLETION MOD tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 114202 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP149L6906HTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 660MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 400µA Supplier Device Package: PG-SOT223-4-21 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
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