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DF200R12KE3HOSA1 Infineon Technologies
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Description: IGBT MODULE 1200V 1040W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1040 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 182.03 EUR |
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Technische Details DF200R12KE3HOSA1 Infineon Technologies
Description: IGBT MODULE 1200V 1040W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1040 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Weitere Produktangebote DF200R12KE3HOSA1 nach Preis ab 157.53 EUR bis 186.72 EUR
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DF200R12KE3HOSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1040 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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DF200R12KE3HOSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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DF200R12KE3HOSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |