Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (137769) > Seite 706 nach 2297
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IDP30C65D2XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: PG-TO220-3 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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FM1608B-SG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 130ns Memory Interface: Parallel Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 12103 Stücke: Lieferzeit 10-14 Tag (e) |
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FM1608B-SG | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 130ns Memory Interface: Parallel Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
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BAT1705E6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT23 Current - Max: 130 mA Power Dissipation (Max): 150 mW |
auf Bestellung 129000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C6036BZI-F04 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b SAR; D/A 1x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 104 DigiKey Programmable: Not Verified |
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CY8C6016BZI-F04 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b SAR; D/A 1x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 104 DigiKey Programmable: Not Verified |
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S29GL064N90TFI040 | Infineon Technologies |
![]() ![]() Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-TSOP Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Verified |
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S29GL064N90FFI040 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FM24C04B-G2 | Infineon Technologies |
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 1 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Memory Interface: I2C Access Time: 550 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2208 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRLR3410TR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
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CY9BF002BGL-G-XXX-ERE1 | Infineon Technologies |
Description: MULTI-MARKET MCUS Packaging: Tape & Reel (TR) |
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IRS9100CXTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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IRS9100CXTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) |
auf Bestellung 5986 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC073N12LM6ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC073N12LM6ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 50µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V |
auf Bestellung 9066 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4125LQI-483 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Number of I/O: 34 DigiKey Programmable: Not Verified |
auf Bestellung 258 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4146LQE-S423 | Infineon Technologies |
Description: PSOC4 - GENERAL Packaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 40-QFN (6x6) Grade: Automotive Number of I/O: 34 Qualification: AEC-Q100 |
auf Bestellung 4815 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL256SAGBHIA03 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S25FL256SAGBHIA03 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R420CFDXKSA2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
auf Bestellung 493 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R310CFDXKSA2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Power Dissipation (Max): 104.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R110CFDXKSA2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFR3504TRL | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V |
Produkt ist nicht verfügbar |
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BSP129L6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 108µA Supplier Device Package: PG-SOT223-4-21 Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V |
auf Bestellung 237893 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE49161KHTSA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.4V ~ 5V Technology: Hall Effect Sensing Range: 5mT Trip, -5mT Release Current - Output (Max): 2mA Current - Supply (Max): 10µA Supplier Device Package: PG-SC59-3 Test Condition: 25°C |
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IR2155PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 80ns, 45ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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BCR129E6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms |
auf Bestellung 214700 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR129WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms |
auf Bestellung 432000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR129SH6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Supplier Device Package: PG-SOT363-PO |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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IR38060MGM18TRP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) |
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CY15B256Q-SXAT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY15B256Q-SXAT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1156 Stücke: Lieferzeit 10-14 Tag (e) |
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IDWD10G120C5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: PG-TO247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
Produkt ist nicht verfügbar |
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IDWD100E120D7XKSA1 | Infineon Technologies |
![]() Packaging: Tube |
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IFX27001TF V15 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1.6 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3 Voltage - Output (Min/Fixed): 1.5V PSRR: 65dB (120Hz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
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IFX27001TF V26 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1.6 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3 Voltage - Output (Min/Fixed): 2.6V PSRR: 65dB (120Hz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
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IRF3709SPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V |
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IRF3709ZPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V |
Produkt ist nicht verfügbar |
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AIKQ100N60CTXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/290ns Switching Energy: 3.1mJ (on), 2.5mJ (off) Test Condition: 400V, 100A, 3.6Ohm, 15V Gate Charge: 610 nC Grade: Automotive Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 400 A Power - Max: 714 W Qualification: AEC-Q101 |
auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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IR2130PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: 28-DIP (0.600", 15.24mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-PDIP Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
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2EP101RXTMA1 | Infineon Technologies |
Description: ISOLATED DRIVER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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IM70D122V01XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Output Type: Digital, PDM Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm) Sensitivity: -26dB ±1dB Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 70dB Termination: Solder Pads Ratings: IP57 - Dust Protected, Waterproof Port Location: Bottom Height (Max): 0.039" (1.00mm) Current - Supply: 980 µA Voltage Range: 1.62 V ~ 3.6 V |
Produkt ist nicht verfügbar |
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IM70D122V01XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Output Type: Digital, PDM Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm) Sensitivity: -26dB ±1dB Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 70dB Termination: Solder Pads Ratings: IP57 - Dust Protected, Waterproof Port Location: Bottom Height (Max): 0.039" (1.00mm) Current - Supply: 980 µA Voltage Range: 1.62 V ~ 3.6 V |
auf Bestellung 3608 Stücke: Lieferzeit 10-14 Tag (e) |
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IMIC50V01X6SA1 | Infineon Technologies |
Description: INTELLIGENT POWER MODULE Packaging: Tray |
Produkt ist nicht verfügbar |
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IPC302N12N3X1SA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 275µA Supplier Device Package: Sawn on foil Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 120 V |
Produkt ist nicht verfügbar |
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IPG20N06S415AATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6405 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR6306WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT323 Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 126000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI084N06L3GXKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 34µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V |
auf Bestellung 1027 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9BF164LQN-G-AVE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 15x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 48 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY9BF165KPMC-G-JNE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 416KB (416K x 8) RAM Size: 48K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 8x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 33 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY9BF165LQN-G-AVE2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 416KB (416K x 8) RAM Size: 48K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 15x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 48 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY8C3866LTI-207 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x20b; D/A 2x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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CYBL10161-56LQXI | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 56UFQFN Packaging: Tray Package / Case: 56-UFQFN Exposed Pad Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V ~ 5.5V Power - Output: 3dBm Protocol: Bluetooth v4.1 Current - Receiving: 16.4mA ~ 21.5mA Data Rate (Max): 1Mbps Current - Transmitting: 12.5mA ~ 20mA Supplier Device Package: 56-QFN (7x7) GPIO: 36 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CYBL10163-56LQXI | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 56UFQFN Packaging: Tray Package / Case: 56-UFQFN Exposed Pad Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V ~ 5.5V Power - Output: 3dBm Protocol: Bluetooth v4.1 Current - Receiving: 16.4mA ~ 21.5mA Data Rate (Max): 1Mbps Current - Transmitting: 12.5mA ~ 20mA Supplier Device Package: 56-QFN (7x7) GPIO: 36 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, SPI, UART DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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PEB3465HV1.2 | Infineon Technologies |
Description: MUSLIC MULTICHANNEL SUBSCRIBER L Packaging: Bulk |
auf Bestellung 3929 Stücke: Lieferzeit 10-14 Tag (e) |
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GATELEADL750PB34602XPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK Packaging: Tray |
Produkt ist nicht verfügbar |
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TDA18275HN/C1E | Infineon Technologies |
![]() Packaging: Bulk |
auf Bestellung 3264 Stücke: Lieferzeit 10-14 Tag (e) |
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TDA18275AHN/C1Y | Infineon Technologies |
![]() Packaging: Bulk |
auf Bestellung 835082 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C68034-56LTXC | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Controller Type: NAND Flash - USB Supplier Device Package: 56-QFN-EP (8x8) |
auf Bestellung 8395 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDB6275FXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 15V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-51 Rise / Fall Time (Typ): 8.3ns, 5ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 9A DigiKey Programmable: Not Verified |
auf Bestellung 2389 Stücke: Lieferzeit 10-14 Tag (e) |
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IDP30C65D2XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: PG-TO220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE ARRAY GP 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: PG-TO220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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5+ | 4.21 EUR |
10+ | 3.49 EUR |
100+ | 2.78 EUR |
FM1608B-SG |
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Hersteller: Infineon Technologies
Description: IC FRAM 64KBIT PARALLEL 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 130ns
Memory Interface: Parallel
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 64KBIT PARALLEL 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 130ns
Memory Interface: Parallel
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 12103 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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45+ | 10.95 EUR |
FM1608B-SG |
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Hersteller: Infineon Technologies
Description: IC FRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 130ns
Memory Interface: Parallel
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 130ns
Memory Interface: Parallel
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BAT1705E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: DIODE SCHOTTKY 4V 150MW SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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4157+ | 0.11 EUR |
CY8C6036BZI-F04 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C6016BZI-F04 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S29GL064N90TFI040 | ![]() |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
S29GL064N90FFI040 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FM24C04B-G2 |
Hersteller: Infineon Technologies
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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500+ | 1.71 EUR |
AUIRLR3410TR |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
CY9BF002BGL-G-XXX-ERE1 |
Produkt ist nicht verfügbar
IRS9100CXTSA1 |
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Produkt ist nicht verfügbar
IRS9100CXTSA1 |
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auf Bestellung 5986 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.45 EUR |
10+ | 2.19 EUR |
25+ | 2.07 EUR |
100+ | 1.76 EUR |
250+ | 1.65 EUR |
500+ | 1.45 EUR |
1000+ | 1.2 EUR |
2500+ | 1.12 EUR |
ISC073N12LM6ATMA1 |
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Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 2.05 EUR |
ISC073N12LM6ATMA1 |
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Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
auf Bestellung 9066 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.38 EUR |
10+ | 3.69 EUR |
100+ | 2.99 EUR |
500+ | 2.65 EUR |
1000+ | 2.27 EUR |
2000+ | 2.14 EUR |
CY8C4125LQI-483 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Bulk
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Bulk
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 258 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
139+ | 3.51 EUR |
CY8C4146LQE-S423 |
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
auf Bestellung 4815 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.34 EUR |
10+ | 12.96 EUR |
25+ | 12.36 EUR |
80+ | 10.73 EUR |
230+ | 10.25 EUR |
490+ | 9.34 EUR |
980+ | 8.14 EUR |
S25FL256SAGBHIA03 |
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Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S25FL256SAGBHIA03 |
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Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 8.96 EUR |
10+ | 8.19 EUR |
25+ | 8.03 EUR |
50+ | 7.97 EUR |
100+ | 7.15 EUR |
250+ | 7.13 EUR |
500+ | 6.68 EUR |
IPP65R420CFDXKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.5 EUR |
10+ | 2.91 EUR |
100+ | 2.31 EUR |
IPP65R310CFDXKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.4 EUR |
10+ | 3.66 EUR |
100+ | 2.91 EUR |
IPP65R110CFDXKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.84 EUR |
10+ | 9.11 EUR |
100+ | 7.37 EUR |
AUIRFR3504TRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
BSP129L6327HTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
auf Bestellung 237893 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
799+ | 0.62 EUR |
TLE49161KHTSA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.4V ~ 5V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 10µA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.4V ~ 5V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 10µA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Produkt ist nicht verfügbar
IR2155PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BCR129E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 214700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7713+ | 0.066 EUR |
BCR129WH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 432000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6571+ | 0.082 EUR |
BCR129SH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3796+ | 0.13 EUR |
IR38060MGM18TRP |
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Produkt ist nicht verfügbar
CY15B256Q-SXAT |
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Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY15B256Q-SXAT |
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Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1156 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.22 EUR |
10+ | 12.16 EUR |
25+ | 11.9 EUR |
50+ | 11.86 EUR |
100+ | 10.65 EUR |
250+ | 10.32 EUR |
500+ | 9.82 EUR |
1000+ | 9.47 EUR |
IDWD10G120C5XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 34A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 34A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Produkt ist nicht verfügbar
IDWD100E120D7XKSA1 |
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Produkt ist nicht verfügbar
IFX27001TF V15 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 1.5V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 1.5V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
IFX27001TF V26 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 2.6V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 2.6V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 2.6V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 2.6V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
IRF3709SPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Description: MOSFET N-CH 30V 90A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Produkt ist nicht verfügbar
IRF3709ZPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Description: MOSFET N-CH 30V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Produkt ist nicht verfügbar
AIKQ100N60CTXKSA1 |
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Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Grade: Automotive
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
Qualification: AEC-Q101
Description: IC DISCRETE 600V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Grade: Automotive
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
Qualification: AEC-Q101
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.33 EUR |
10+ | 14.1 EUR |
30+ | 13.51 EUR |
120+ | 12.86 EUR |
IR2130PBF | ![]() |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 24.78 EUR |
13+ | 22.78 EUR |
26+ | 21.84 EUR |
2EP101RXTMA1 |
Produkt ist nicht verfügbar
IM70D122V01XTMA1 |
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Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 70dB
Termination: Solder Pads
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Description: MIC MEMS DIGITAL PDM -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 70dB
Termination: Solder Pads
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Produkt ist nicht verfügbar
IM70D122V01XTMA1 |
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Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM -26DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 70dB
Termination: Solder Pads
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Description: MIC MEMS DIGITAL PDM -26DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 70dB
Termination: Solder Pads
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
auf Bestellung 3608 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.2 EUR |
10+ | 2.67 EUR |
25+ | 2.47 EUR |
50+ | 2.32 EUR |
100+ | 2.18 EUR |
250+ | 2.02 EUR |
500+ | 1.87 EUR |
1000+ | 1.78 EUR |
IMIC50V01X6SA1 |
Produkt ist nicht verfügbar
IPC302N12N3X1SA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 120 V
Description: MOSFET N-CH 120V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 120 V
Produkt ist nicht verfügbar
IPG20N06S415AATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6405 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
491+ | 0.99 EUR |
BAR6306WH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3936+ | 0.13 EUR |
IPI084N06L3GXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 1027 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
594+ | 0.83 EUR |
CY9BF164LQN-G-AVE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF165KPMC-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 416KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF165LQN-G-AVE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 416KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C3866LTI-207 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 26.94 EUR |
CYBL10161-56LQXI |
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYBL10163-56LQXI |
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PEB3465HV1.2 |
auf Bestellung 3929 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 22.83 EUR |
GATELEADL750PB34602XPSA1 |
Produkt ist nicht verfügbar
TDA18275HN/C1E |
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auf Bestellung 3264 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
919+ | 0.54 EUR |
TDA18275AHN/C1Y |
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auf Bestellung 835082 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
446+ | 1.09 EUR |
CY7C68034-56LTXC |
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Hersteller: Infineon Technologies
Description: IC USB CTLR NAND NX2LP 56QFN
Packaging: Bulk
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN-EP (8x8)
Description: IC USB CTLR NAND NX2LP 56QFN
Packaging: Bulk
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN-EP (8x8)
auf Bestellung 8395 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 30.75 EUR |
1EDB6275FXUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 15V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 8.3ns, 5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 9A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 15V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 8.3ns, 5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 9A
DigiKey Programmable: Not Verified
auf Bestellung 2389 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.91 EUR |
10+ | 3.51 EUR |
25+ | 3.31 EUR |
100+ | 2.82 EUR |
250+ | 2.65 EUR |
500+ | 2.31 EUR |
1000+ | 1.92 EUR |