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IDP30C65D2XKSA1 IDP30C65D2XKSA1 Infineon Technologies Infineon-IDP30C65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef31f3ebf Description: DIODE ARRAY GP 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: PG-TO220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 495 Stücke:
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5+4.21 EUR
10+ 3.49 EUR
100+ 2.78 EUR
Mindestbestellmenge: 5
FM1608B-SG FM1608B-SG Infineon Technologies FM1608B.pdf Description: IC FRAM 64KBIT PARALLEL 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 130ns
Memory Interface: Parallel
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 12103 Stücke:
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45+10.95 EUR
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FM1608B-SG FM1608B-SG Infineon Technologies FM1608B.pdf Description: IC FRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 130ns
Memory Interface: Parallel
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BAT1705E6327HTSA1 BAT1705E6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 4V 150MW SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 129000 Stücke:
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CY8C6036BZI-F04 CY8C6036BZI-F04 Infineon Technologies Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C6016BZI-F04 CY8C6016BZI-F04 Infineon Technologies Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S29GL064N90TFI040 S29GL064N90TFI040 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi description Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
S29GL064N90FFI040 S29GL064N90FFI040 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FM24C04B-G2 Infineon Technologies Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 2208 Stücke:
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500+1.71 EUR
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AUIRLR3410TR AUIRLR3410TR Infineon Technologies IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
CY9BF002BGL-G-XXX-ERE1 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IRS9100CXTSA1 Infineon Technologies Infineon-IRS9100C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188f84a74a34be7 Description: 3DI
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IRS9100CXTSA1 Infineon Technologies Infineon-IRS9100C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188f84a74a34be7 Description: 3DI
Packaging: Cut Tape (CT)
auf Bestellung 5986 Stücke:
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8+2.45 EUR
10+ 2.19 EUR
25+ 2.07 EUR
100+ 1.76 EUR
250+ 1.65 EUR
500+ 1.45 EUR
1000+ 1.2 EUR
2500+ 1.12 EUR
Mindestbestellmenge: 8
ISC073N12LM6ATMA1 ISC073N12LM6ATMA1 Infineon Technologies Infineon-ISC073N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a53ca5378 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
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ISC073N12LM6ATMA1 ISC073N12LM6ATMA1 Infineon Technologies Infineon-ISC073N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a53ca5378 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
auf Bestellung 9066 Stücke:
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10+ 3.69 EUR
100+ 2.99 EUR
500+ 2.65 EUR
1000+ 2.27 EUR
2000+ 2.14 EUR
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CY8C4125LQI-483 CY8C4125LQI-483 Infineon Technologies Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Bulk
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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139+3.51 EUR
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CY8C4146LQE-S423 CY8C4146LQE-S423 Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
auf Bestellung 4815 Stücke:
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2+14.34 EUR
10+ 12.96 EUR
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80+ 10.73 EUR
230+ 10.25 EUR
490+ 9.34 EUR
980+ 8.14 EUR
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S25FL256SAGBHIA03 S25FL256SAGBHIA03 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S25FL256SAGBHIA03 S25FL256SAGBHIA03 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 990 Stücke:
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2+8.96 EUR
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25+ 8.03 EUR
50+ 7.97 EUR
100+ 7.15 EUR
250+ 7.13 EUR
500+ 6.68 EUR
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IPP65R420CFDXKSA2 IPP65R420CFDXKSA2 Infineon Technologies Infineon-IPX65R420CFD-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c82ce56640182d510b9ad5997 Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 493 Stücke:
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100+ 2.31 EUR
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IPP65R310CFDXKSA2 IPP65R310CFDXKSA2 Infineon Technologies Infineon-IPX65R310CFD-DS-v02_03-en[1].pdf?fileId=db3a30432f91014f012f9caff105741c Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 450 Stücke:
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IPP65R110CFDXKSA2 IPP65R110CFDXKSA2 Infineon Technologies Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
auf Bestellung 446 Stücke:
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AUIRFR3504TRL AUIRFR3504TRL Infineon Technologies AUIRFR3504.pdf Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
BSP129L6327HTSA1 BSP129L6327HTSA1 Infineon Technologies Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
auf Bestellung 237893 Stücke:
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799+0.62 EUR
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TLE49161KHTSA1 TLE49161KHTSA1 Infineon Technologies TLE4916-1K_FinalDS_Rev1.0.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304327b8975001281b98f40d1aeb Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.4V ~ 5V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 10µA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Produkt ist nicht verfügbar
IR2155PBF IR2155PBF Infineon Technologies ir2155.pdf?fileId=5546d462533600a4015355c8dec316b6 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BCR129E6327HTSA1 BCR129E6327HTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
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Mindestbestellmenge: 7713
BCR129WH6327XTSA1 BCR129WH6327XTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
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BCR129SH6327XTSA1 BCR129SH6327XTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
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IR38060MGM18TRP Infineon Technologies Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
CY15B256Q-SXAT CY15B256Q-SXAT Infineon Technologies 5047 Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY15B256Q-SXAT CY15B256Q-SXAT Infineon Technologies 5047 Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1156 Stücke:
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2+13.22 EUR
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IDWD10G120C5XKSA1 IDWD10G120C5XKSA1 Infineon Technologies Infineon-IDWD10G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d53cbf5486 Description: DIODE SIL CARB 1.2KV 34A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Produkt ist nicht verfügbar
IDWD100E120D7XKSA1 IDWD100E120D7XKSA1 Infineon Technologies IDWD100E120D7_Rev1.00_12-15-23.pdf Description: INDUSTRY 14
Packaging: Tube
Produkt ist nicht verfügbar
IFX27001TF V15 IFX27001TF V15 Infineon Technologies Infineon-Industrial_Standard_Pocket_Guide-2015_FL-WEB-ProductBrochure-v01_00-EN.pdf?fileId=db3a30432d9b3066012da32dcb5b3561 Description: IC REG LINEAR 1.5V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
IFX27001TF V26 IFX27001TF V26 Infineon Technologies Infineon-Industrial_Standard_Pocket_Guide-2015_FL-WEB-ProductBrochure-v01_00-EN.pdf?fileId=db3a30432d9b3066012da32dcb5b3561 Description: IC REG LINEAR 2.6V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 2.6V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
IRF3709SPBF IRF3709SPBF Infineon Technologies irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f Description: MOSFET N-CH 30V 90A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Produkt ist nicht verfügbar
IRF3709ZPBF IRF3709ZPBF Infineon Technologies IRF3709Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 30V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Produkt ist nicht verfügbar
AIKQ100N60CTXKSA1 AIKQ100N60CTXKSA1 Infineon Technologies Infineon-AIKQ100N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382b3b37c99 Description: IC DISCRETE 600V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Grade: Automotive
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
Qualification: AEC-Q101
auf Bestellung 234 Stücke:
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IR2130PBF IR2130PBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a description Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 71 Stücke:
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1+24.78 EUR
13+ 22.78 EUR
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2EP101RXTMA1 Infineon Technologies Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IM70D122V01XTMA1 IM70D122V01XTMA1 Infineon Technologies Infineon-IM70D122-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa52e616db0 Description: MIC MEMS DIGITAL PDM -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 70dB
Termination: Solder Pads
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Produkt ist nicht verfügbar
IM70D122V01XTMA1 IM70D122V01XTMA1 Infineon Technologies Infineon-IM70D122-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa52e616db0 Description: MIC MEMS DIGITAL PDM -26DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 70dB
Termination: Solder Pads
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
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IMIC50V01X6SA1 Infineon Technologies Description: INTELLIGENT POWER MODULE
Packaging: Tray
Produkt ist nicht verfügbar
IPC302N12N3X1SA1 Infineon Technologies DS_IPC302N12N3_2_5.pdf?fileId=db3a30434422e00e01442b33d4915102 Description: MOSFET N-CH 120V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 120 V
Produkt ist nicht verfügbar
IPG20N06S415AATMA1 IPG20N06S415AATMA1 Infineon Technologies Infineon-IPG20N06S4-15A-DS-v01_00-EN.pdf?fileId=5546d462503812bb01508026e8d06570 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6405 Stücke:
Lieferzeit 10-14 Tag (e)
491+0.99 EUR
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BAR6306WH6327XTSA1 BAR6306WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 126000 Stücke:
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IPI084N06L3GXKSA1 IPI084N06L3GXKSA1 Infineon Technologies IPx084N06L3G.pdf Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
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CY9BF164LQN-G-AVE2 CY9BF164LQN-G-AVE2 Infineon Technologies Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28 Description: IC MCU 32BIT 288KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF165KPMC-G-JNE2 CY9BF165KPMC-G-JNE2 Infineon Technologies Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28 Description: IC MCU 32BIT 416KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF165LQN-G-AVE2 CY9BF165LQN-G-AVE2 Infineon Technologies Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28 Description: IC MCU 32BIT 416KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C3866LTI-207 CY8C3866LTI-207 Infineon Technologies Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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19+26.94 EUR
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CYBL10161-56LQXI CYBL10161-56LQXI Infineon Technologies Description: IC RF TXRX+MCU BLUETOOTH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYBL10163-56LQXI CYBL10163-56LQXI Infineon Technologies Description: IC RF TXRX+MCU BLUETOOTH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PEB3465HV1.2 Infineon Technologies Description: MUSLIC MULTICHANNEL SUBSCRIBER L
Packaging: Bulk
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GATELEADL750PB34602XPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
Produkt ist nicht verfügbar
TDA18275HN/C1E Infineon Technologies TDA18275_SDS.pdf Description: TDA18SilicTunonboafHybrTV
Packaging: Bulk
auf Bestellung 3264 Stücke:
Lieferzeit 10-14 Tag (e)
919+0.54 EUR
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TDA18275AHN/C1Y Infineon Technologies TDA18275_SDS.pdf Description: TDA18SilicTunonboafHybrTV
Packaging: Bulk
auf Bestellung 835082 Stücke:
Lieferzeit 10-14 Tag (e)
446+1.09 EUR
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CY7C68034-56LTXC CY7C68034-56LTXC Infineon Technologies CY7C68033_34.pdf Description: IC USB CTLR NAND NX2LP 56QFN
Packaging: Bulk
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN-EP (8x8)
auf Bestellung 8395 Stücke:
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16+30.75 EUR
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1EDB6275FXUMA1 1EDB6275FXUMA1 Infineon Technologies Infineon-1EDB6275F-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7ddc01d7017e58357cc43011 Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 15V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 8.3ns, 5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 9A
DigiKey Programmable: Not Verified
auf Bestellung 2389 Stücke:
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5+3.91 EUR
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100+ 2.82 EUR
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500+ 2.31 EUR
1000+ 1.92 EUR
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IDP30C65D2XKSA1 Infineon-IDP30C65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef31f3ebf
IDP30C65D2XKSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: PG-TO220-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 495 Stücke:
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5+4.21 EUR
10+ 3.49 EUR
100+ 2.78 EUR
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FM1608B-SG FM1608B.pdf
FM1608B-SG
Hersteller: Infineon Technologies
Description: IC FRAM 64KBIT PARALLEL 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 130ns
Memory Interface: Parallel
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 12103 Stücke:
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Anzahl Preis ohne MwSt
45+10.95 EUR
Mindestbestellmenge: 45
FM1608B-SG FM1608B.pdf
FM1608B-SG
Hersteller: Infineon Technologies
Description: IC FRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 130ns
Memory Interface: Parallel
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BAT1705E6327HTSA1 fundamentals-of-power-semiconductors
BAT1705E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4157+0.11 EUR
Mindestbestellmenge: 4157
CY8C6036BZI-F04 Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C6036BZI-F04
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C6016BZI-F04 Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C6016BZI-F04
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S29GL064N90TFI040 description Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90TFI040
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
S29GL064N90FFI040 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90FFI040
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FM24C04B-G2
Hersteller: Infineon Technologies
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+1.71 EUR
Mindestbestellmenge: 500
AUIRLR3410TR IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw
AUIRLR3410TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
CY9BF002BGL-G-XXX-ERE1
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IRS9100CXTSA1 Infineon-IRS9100C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188f84a74a34be7
Hersteller: Infineon Technologies
Description: 3DI
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IRS9100CXTSA1 Infineon-IRS9100C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188f84a74a34be7
Hersteller: Infineon Technologies
Description: 3DI
Packaging: Cut Tape (CT)
auf Bestellung 5986 Stücke:
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Anzahl Preis ohne MwSt
8+2.45 EUR
10+ 2.19 EUR
25+ 2.07 EUR
100+ 1.76 EUR
250+ 1.65 EUR
500+ 1.45 EUR
1000+ 1.2 EUR
2500+ 1.12 EUR
Mindestbestellmenge: 8
ISC073N12LM6ATMA1 Infineon-ISC073N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a53ca5378
ISC073N12LM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
auf Bestellung 5000 Stücke:
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Anzahl Preis ohne MwSt
5000+2.05 EUR
Mindestbestellmenge: 5000
ISC073N12LM6ATMA1 Infineon-ISC073N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a53ca5378
ISC073N12LM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
auf Bestellung 9066 Stücke:
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Anzahl Preis ohne MwSt
5+4.38 EUR
10+ 3.69 EUR
100+ 2.99 EUR
500+ 2.65 EUR
1000+ 2.27 EUR
2000+ 2.14 EUR
Mindestbestellmenge: 5
CY8C4125LQI-483 Infineon-PSoC_4_PSoC_4100_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec86cc240d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125LQI-483
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Bulk
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 258 Stücke:
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Anzahl Preis ohne MwSt
139+3.51 EUR
Mindestbestellmenge: 139
CY8C4146LQE-S423
CY8C4146LQE-S423
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
auf Bestellung 4815 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.34 EUR
10+ 12.96 EUR
25+ 12.36 EUR
80+ 10.73 EUR
230+ 10.25 EUR
490+ 9.34 EUR
980+ 8.14 EUR
Mindestbestellmenge: 2
S25FL256SAGBHIA03 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGBHIA03
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S25FL256SAGBHIA03 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGBHIA03
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.96 EUR
10+ 8.19 EUR
25+ 8.03 EUR
50+ 7.97 EUR
100+ 7.15 EUR
250+ 7.13 EUR
500+ 6.68 EUR
Mindestbestellmenge: 2
IPP65R420CFDXKSA2 Infineon-IPX65R420CFD-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c82ce56640182d510b9ad5997
IPP65R420CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.5 EUR
10+ 2.91 EUR
100+ 2.31 EUR
Mindestbestellmenge: 6
IPP65R310CFDXKSA2 Infineon-IPX65R310CFD-DS-v02_03-en[1].pdf?fileId=db3a30432f91014f012f9caff105741c
IPP65R310CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.4 EUR
10+ 3.66 EUR
100+ 2.91 EUR
Mindestbestellmenge: 4
IPP65R110CFDXKSA2 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
IPP65R110CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.84 EUR
10+ 9.11 EUR
100+ 7.37 EUR
Mindestbestellmenge: 2
AUIRFR3504TRL AUIRFR3504.pdf
AUIRFR3504TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
BSP129L6327HTSA1 Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f
BSP129L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
auf Bestellung 237893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
799+0.62 EUR
Mindestbestellmenge: 799
TLE49161KHTSA1 TLE4916-1K_FinalDS_Rev1.0.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304327b8975001281b98f40d1aeb
TLE49161KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.4V ~ 5V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 10µA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Produkt ist nicht verfügbar
IR2155PBF ir2155.pdf?fileId=5546d462533600a4015355c8dec316b6
IR2155PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BCR129E6327HTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 214700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7713+0.066 EUR
Mindestbestellmenge: 7713
BCR129WH6327XTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 432000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6571+0.082 EUR
Mindestbestellmenge: 6571
BCR129SH6327XTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129SH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3796+0.13 EUR
Mindestbestellmenge: 3796
IR38060MGM18TRP Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee
Hersteller: Infineon Technologies
Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
CY15B256Q-SXAT 5047
CY15B256Q-SXAT
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY15B256Q-SXAT 5047
CY15B256Q-SXAT
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT SPI 40MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.22 EUR
10+ 12.16 EUR
25+ 11.9 EUR
50+ 11.86 EUR
100+ 10.65 EUR
250+ 10.32 EUR
500+ 9.82 EUR
1000+ 9.47 EUR
Mindestbestellmenge: 2
IDWD10G120C5XKSA1 Infineon-IDWD10G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d53cbf5486
IDWD10G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 34A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Produkt ist nicht verfügbar
IDWD100E120D7XKSA1 IDWD100E120D7_Rev1.00_12-15-23.pdf
IDWD100E120D7XKSA1
Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Produkt ist nicht verfügbar
IFX27001TF V15 Infineon-Industrial_Standard_Pocket_Guide-2015_FL-WEB-ProductBrochure-v01_00-EN.pdf?fileId=db3a30432d9b3066012da32dcb5b3561
IFX27001TF V15
Hersteller: Infineon Technologies
Description: IC REG LINEAR 1.5V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 1.5V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
IFX27001TF V26 Infineon-Industrial_Standard_Pocket_Guide-2015_FL-WEB-ProductBrochure-v01_00-EN.pdf?fileId=db3a30432d9b3066012da32dcb5b3561
IFX27001TF V26
Hersteller: Infineon Technologies
Description: IC REG LINEAR 2.6V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 2.6V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
IRF3709SPBF irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f
IRF3709SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Produkt ist nicht verfügbar
IRF3709ZPBF IRF3709Z%28S%2CL%29PbF.pdf
IRF3709ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Produkt ist nicht verfügbar
AIKQ100N60CTXKSA1 Infineon-AIKQ100N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382b3b37c99
AIKQ100N60CTXKSA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Grade: Automotive
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
Qualification: AEC-Q101
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.33 EUR
10+ 14.1 EUR
30+ 13.51 EUR
120+ 12.86 EUR
Mindestbestellmenge: 2
IR2130PBF description ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2130PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+24.78 EUR
13+ 22.78 EUR
26+ 21.84 EUR
2EP101RXTMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IM70D122V01XTMA1 Infineon-IM70D122-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa52e616db0
IM70D122V01XTMA1
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 70dB
Termination: Solder Pads
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Produkt ist nicht verfügbar
IM70D122V01XTMA1 Infineon-IM70D122-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa52e616db0
IM70D122V01XTMA1
Hersteller: Infineon Technologies
Description: MIC MEMS DIGITAL PDM -26DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 70dB
Termination: Solder Pads
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (1.00mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
auf Bestellung 3608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.2 EUR
10+ 2.67 EUR
25+ 2.47 EUR
50+ 2.32 EUR
100+ 2.18 EUR
250+ 2.02 EUR
500+ 1.87 EUR
1000+ 1.78 EUR
Mindestbestellmenge: 6
IMIC50V01X6SA1
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE
Packaging: Tray
Produkt ist nicht verfügbar
IPC302N12N3X1SA1 DS_IPC302N12N3_2_5.pdf?fileId=db3a30434422e00e01442b33d4915102
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 120 V
Produkt ist nicht verfügbar
IPG20N06S415AATMA1 Infineon-IPG20N06S4-15A-DS-v01_00-EN.pdf?fileId=5546d462503812bb01508026e8d06570
IPG20N06S415AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
491+0.99 EUR
Mindestbestellmenge: 491
BAR6306WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6306WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3936+0.13 EUR
Mindestbestellmenge: 3936
IPI084N06L3GXKSA1 IPx084N06L3G.pdf
IPI084N06L3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 1027 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
594+0.83 EUR
Mindestbestellmenge: 594
CY9BF164LQN-G-AVE2 Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28
CY9BF164LQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF165KPMC-G-JNE2 Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28
CY9BF165KPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF165LQN-G-AVE2 Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28
CY9BF165LQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C3866LTI-207 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3866LTI-207
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+26.94 EUR
Mindestbestellmenge: 19
CYBL10161-56LQXI
CYBL10161-56LQXI
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYBL10163-56LQXI
CYBL10163-56LQXI
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PEB3465HV1.2
Hersteller: Infineon Technologies
Description: MUSLIC MULTICHANNEL SUBSCRIBER L
Packaging: Bulk
auf Bestellung 3929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+22.83 EUR
Mindestbestellmenge: 22
GATELEADL750PB34602XPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Produkt ist nicht verfügbar
TDA18275HN/C1E TDA18275_SDS.pdf
Hersteller: Infineon Technologies
Description: TDA18SilicTunonboafHybrTV
Packaging: Bulk
auf Bestellung 3264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
919+0.54 EUR
Mindestbestellmenge: 919
TDA18275AHN/C1Y TDA18275_SDS.pdf
Hersteller: Infineon Technologies
Description: TDA18SilicTunonboafHybrTV
Packaging: Bulk
auf Bestellung 835082 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
446+1.09 EUR
Mindestbestellmenge: 446
CY7C68034-56LTXC CY7C68033_34.pdf
CY7C68034-56LTXC
Hersteller: Infineon Technologies
Description: IC USB CTLR NAND NX2LP 56QFN
Packaging: Bulk
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN-EP (8x8)
auf Bestellung 8395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+30.75 EUR
Mindestbestellmenge: 16
1EDB6275FXUMA1 Infineon-1EDB6275F-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7ddc01d7017e58357cc43011
1EDB6275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 15V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 8.3ns, 5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 9A
DigiKey Programmable: Not Verified
auf Bestellung 2389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.91 EUR
10+ 3.51 EUR
25+ 3.31 EUR
100+ 2.82 EUR
250+ 2.65 EUR
500+ 2.31 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 5
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