Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (137770) > Seite 710 nach 2297
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BGSA12UGL8E6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: SPDT RF Type: CDMA, EDGE, LTE, W-CDMA Voltage - Supply: 1.8V ~ 3.6V P1dB: 11.2dBm Supplier Device Package: PG-TSLP-8-1 |
auf Bestellung 2309994 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20666AS-24LQXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (32kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-QFN (6x6) Number of I/O: 36 DigiKey Programmable: Not Verified |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IRAM256-1067A2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
Produkt ist nicht verfügbar |
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S25FL512SDPMFI010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 66 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IPB60R170CFD7ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS700121ESPXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 1.4mOhm Input Type: Non-Inverting Voltage - Load: 4.1V ~ 28V Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V Current - Output (Max): 31.3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-24-32 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ITS6035SEPKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Serial Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 35mOhm (Max) Voltage - Supply (Vcc/Vdd): 5V ~ 36V Current - Output (Max): 13A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14 Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ITS6035SEPKXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Serial Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 35mOhm (Max) Voltage - Supply (Vcc/Vdd): 5V ~ 36V Current - Output (Max): 13A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14 Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage |
auf Bestellung 3240 Stücke: Lieferzeit 10-14 Tag (e) |
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2EDL8033G3CXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: PG-VSON-10-4 Rise / Fall Time (Typ): 4.6ns, 4.4ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 3A, 6A DigiKey Programmable: Not Verified |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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2EDL8034G3CXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: PG-VSON-10-4 Rise / Fall Time (Typ): 4.6ns, 4.4ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 6A DigiKey Programmable: Not Verified |
auf Bestellung 3971 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED2772S01GXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 7V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 140 V Supplier Device Package: PG-VSON-10-5 Rise / Fall Time (Typ): 24ns, 12ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 1A, 2A |
Produkt ist nicht verfügbar |
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2ED2772S01GXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 7V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 140 V Supplier Device Package: PG-VSON-10-5 Rise / Fall Time (Typ): 24ns, 12ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 1A, 2A |
Produkt ist nicht verfügbar |
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2ED2778S01GXTMA1 | Infineon Technologies |
Description: 2ED2778S01GXTMA1 Packaging: Box Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 7V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 140 V Supplier Device Package: PG-VSON-10-5 Rise / Fall Time (Typ): 24ns, 12ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 4A, 8A |
Produkt ist nicht verfügbar |
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AUIRF7732S2TR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: DIRECTFET™ SC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
Produkt ist nicht verfügbar |
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AUIRF7732S2TR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric SC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: DIRECTFET™ SC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
auf Bestellung 4270 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF7734M2TR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric M2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 43A, 10V Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: DirectFET™ Isometric M2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2545 pF @ 25 V |
Produkt ist nicht verfügbar |
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S25FL128SDPBHID10 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 66 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (6x8) Write Cycle Time - Word, Page: 750µs Memory Interface: SPI - Quad I/O Access Time: 6.5 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IMBG120R017M2HXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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IMBG120R017M2HXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) |
auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
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CYT2B98CACQ0AZEGS | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+/M4F Data Converters: A/D 82x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 128 DigiKey Programmable: Not Verified |
auf Bestellung 1548 Stücke: Lieferzeit 10-14 Tag (e) |
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CYT2B98CACQ0AZEGS | Infineon Technologies |
![]() Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+/M4F Data Converters: A/D 82x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 128 DigiKey Programmable: Not Verified |
auf Bestellung 398 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R060C7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Power Dissipation (Max): 162W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V |
auf Bestellung 648 Stücke: Lieferzeit 10-14 Tag (e) |
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FS3L25R12W2H3PB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20247S-24LKXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 16-UFQFN Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 16-QFN (3x3) Number of I/O: 13 DigiKey Programmable: Not Verified |
auf Bestellung 978 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20247S-24LKXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 16-UFQFN Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 16-QFN (3x3) Number of I/O: 13 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY26114ZC | Infineon Technologies |
![]() Packaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 100MHz Type: Clock Generator, Fanout Distribution, Multiplexer Input: Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IDK16G120C5XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FF900R17ME7WB11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 93800 pF @ 25 V |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG4IBC20FDPBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A Supplier Device Package: TO-220AB Full-Pak Td (on/off) @ 25°C: 43ns/240ns Switching Energy: 250µJ (on), 640µJ (off) Test Condition: 480V, 9A, 50Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 14.3 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 64 A Power - Max: 34 W |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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FF1800R12IE5BPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V |
auf Bestellung 398 Stücke: Lieferzeit 10-14 Tag (e) |
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F3L15MR12W2M1B69BOMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY2BM-2 IGBT Type: Trench Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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F3L15MR12W2M1B69BOMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY2BM-2 IGBT Type: Trench Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V |
Produkt ist nicht verfügbar |
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FD300R12KS4HOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1950 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
auf Bestellung 276 Stücke: Lieferzeit 10-14 Tag (e) |
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FF300R12ME3BOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
auf Bestellung 423 Stücke: Lieferzeit 10-14 Tag (e) |
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FF300R12ME3BOSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
Produkt ist nicht verfügbar |
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TDA16847 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 125°C Voltage - Supply: 8V ~ 16V Applications: Power Supply Controller Supplier Device Package: PG-DIP-14-3 Current - Supply: 5 mA DigiKey Programmable: Not Verified |
auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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IDW32G65C5BXKSA2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 470pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI05I12AHXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Supplier Device Package: PG-DSO-8-59 Rise / Fall Time (Typ): 10ns, 9ns Number of Channels: 1 Voltage - Output Supply: 13V ~ 35V |
Produkt ist nicht verfügbar |
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1EDI05I12AHXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Supplier Device Package: PG-DSO-8-59 Rise / Fall Time (Typ): 10ns, 9ns Number of Channels: 1 Voltage - Output Supply: 13V ~ 35V |
Produkt ist nicht verfügbar |
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1EDI30J12CPXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Supplier Device Package: PG-DSO-19-4 Rise / Fall Time (Typ): 23ns, 22ns Number of Channels: 1 Voltage - Output Supply: 4.75V ~ 17.5V |
auf Bestellung 46670 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI3051EVALBOARDTOBO2 | Infineon Technologies |
Description: EICEDRIVER GATE DRIVER EVALUATIO Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: 1EDI305xAS Supplied Contents: Board(s) Primary Attributes: Isolated Embedded: No |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI303XASEVALBOARDTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Gate Driver Type: Power Management Utilized IC / Part: 1EDI303xAS Supplied Contents: Board(s) Primary Attributes: Isolated Embedded: No |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI3050EVALBOARDTOBO1 | Infineon Technologies |
Description: EICEDRIVER GATE DRIVER EVALUATIO Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: 1EDI305xAS Supplied Contents: Board(s) Primary Attributes: Isolated Embedded: No |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI3050ASXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Capacitive Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 8000Vpk Approval Agency: IEC/EN/DIN, UL Supplier Device Package: PG-DSO-36-85 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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1EDI3050ASXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Capacitive Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 8000Vpk Approval Agency: IEC/EN/DIN, UL Supplier Device Package: PG-DSO-36-85 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V Qualification: AEC-Q100 |
auf Bestellung 766 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI3051ASXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Capacitive Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 8000Vpk Approval Agency: IEC/EN/DIN, UL Supplier Device Package: PG-DSO-36-85 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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1EDI3051ASXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Capacitive Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 8000Vpk Approval Agency: IEC/EN/DIN, UL Supplier Device Package: PG-DSO-36-85 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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ITD50N04S4L07ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 18µA Supplier Device Package: PG-TO252-5-311 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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IRS2336DJPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: 44-LCC (J-Lead), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58) Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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DZ950N44KHPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 950A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 4400 V Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A Current - Reverse Leakage @ Vr: 100 mA @ 4400 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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DZ950N44KS02HPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 950A Supplier Device Package: BG-PB70-1 Operating Temperature - Junction: 160°C (Max) Voltage - DC Reverse (Vr) (Max): 4400 V Current - Reverse Leakage @ Vr: 100 mA @ 4400 V |
Produkt ist nicht verfügbar |
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CY8C20524-12PVXI | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI Peripherals: LVD, POR, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Verified |
Produkt ist nicht verfügbar |
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MB39A112PFT-G-BND-ERE1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 250kHz ~ 2.6MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 7V ~ 25V Supplier Device Package: 20-TSSOP Synchronous Rectifier: No Control Features: Soft Start Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: No Number of Outputs: 3 |
Produkt ist nicht verfügbar |
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MB39A135PFT-G-JN-ERE1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz ~ 780kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V Supplier Device Package: 16-TSSOP Synchronous Rectifier: Yes Control Features: Current Limit, Power Good, Soft Start Output Phases: 1 Clock Sync: No Number of Outputs: 1 |
Produkt ist nicht verfügbar |
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MB39A135PFT-G-JN-ERE1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz ~ 780kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V Supplier Device Package: 16-TSSOP Synchronous Rectifier: Yes Control Features: Current Limit, Power Good, Soft Start Output Phases: 1 Clock Sync: No Number of Outputs: 1 |
Produkt ist nicht verfügbar |
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MB39A134PFT-G-BND-ERE1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-TFSOP (0.173", 4.40mm Width) Number of Cells: 2 ~ 4 Mounting Type: Surface Mount Function: Power Management Operating Temperature: -30°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: 24-TSSOP Fault Protection: Over Temperature, Under Voltage |
Produkt ist nicht verfügbar |
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IPP027N08N5XKSA1 | Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 154µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V |
Produkt ist nicht verfügbar |
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EVAL1ED3142MU12FSICTOBO1 | Infineon Technologies |
![]() Packaging: Bulk |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1020B-12VXC | Infineon Technologies |
![]() Packaging: Tube Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 32K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 2047 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7S1049G30-10VXI | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 36-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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BGSA12UGL8E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT TSLP8-1
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.8V ~ 3.6V
P1dB: 11.2dBm
Supplier Device Package: PG-TSLP-8-1
Description: IC RF SWITCH SPDT TSLP8-1
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.8V ~ 3.6V
P1dB: 11.2dBm
Supplier Device Package: PG-TSLP-8-1
auf Bestellung 2309994 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1293+ | 0.37 EUR |
CY8C20666AS-24LQXI |
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Hersteller: Infineon Technologies
Description: IC CAPSENSE 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC CAPSENSE 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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2+ | 10.28 EUR |
IRAM256-1067A2 |
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Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 8A
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: IC MOD PWR HYBRID 600V 8A
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
S25FL512SDPMFI010 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPB60R170CFD7ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
Description: MOSFET N-CH 600V 14A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.79 EUR |
10+ | 3.98 EUR |
100+ | 3.17 EUR |
500+ | 2.68 EUR |
BTS700121ESPXUMA2 |
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Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 4.44 EUR |
ITS6035SEPKXUMA1 |
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Hersteller: Infineon Technologies
Description: INDUSTRY PROFETS
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
Description: INDUSTRY PROFETS
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 3.22 EUR |
ITS6035SEPKXUMA1 |
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Hersteller: Infineon Technologies
Description: INDUSTRY PROFETS
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
Description: INDUSTRY PROFETS
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
auf Bestellung 3240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.41 EUR |
10+ | 5.76 EUR |
25+ | 5.44 EUR |
100+ | 4.72 EUR |
250+ | 4.47 EUR |
500+ | 4.01 EUR |
1000+ | 3.39 EUR |
2EDL8033G3CXTMA1 |
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Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 6A
DigiKey Programmable: Not Verified
Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 6A
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.78 EUR |
10+ | 3.4 EUR |
25+ | 3.21 EUR |
100+ | 2.73 EUR |
250+ | 2.57 EUR |
500+ | 2.25 EUR |
1000+ | 1.86 EUR |
2EDL8034G3CXTMA1 |
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Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
DigiKey Programmable: Not Verified
Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
DigiKey Programmable: Not Verified
auf Bestellung 3971 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.91 EUR |
10+ | 3.51 EUR |
25+ | 3.31 EUR |
100+ | 2.82 EUR |
250+ | 2.65 EUR |
500+ | 2.31 EUR |
1000+ | 1.92 EUR |
2ED2772S01GXTMA1 |
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Hersteller: Infineon Technologies
Description: 2ED2772S01GXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Description: 2ED2772S01GXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Produkt ist nicht verfügbar
2ED2772S01GXTMA1 |
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Hersteller: Infineon Technologies
Description: 2ED2772S01GXTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Description: 2ED2772S01GXTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Produkt ist nicht verfügbar
2ED2778S01GXTMA1 |
Hersteller: Infineon Technologies
Description: 2ED2778S01GXTMA1
Packaging: Box
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4A, 8A
Description: 2ED2778S01GXTMA1
Packaging: Box
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4A, 8A
Produkt ist nicht verfügbar
AUIRF7732S2TR |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
AUIRF7732S2TR |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 4270 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.41 EUR |
10+ | 2.84 EUR |
100+ | 2.26 EUR |
500+ | 1.91 EUR |
1000+ | 1.62 EUR |
2000+ | 1.54 EUR |
AUIRF7734M2TR |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 17A DIRECTFET M2
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 43A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DirectFET™ Isometric M2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2545 pF @ 25 V
Description: MOSFET N-CH 40V 17A DIRECTFET M2
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 43A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DirectFET™ Isometric M2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2545 pF @ 25 V
Produkt ist nicht verfügbar
S25FL128SDPBHID10 |
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Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IMBG120R017M2HXTMA1 |
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Produkt ist nicht verfügbar
IMBG120R017M2HXTMA1 |
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auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 50.81 EUR |
10+ | 45.16 EUR |
100+ | 39.5 EUR |
CYT2B98CACQ0AZEGS |
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Hersteller: Infineon Technologies
Description: TVII-B-E-2M-176 REV A2 CFLASH 2M
Packaging: Bulk
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
Description: TVII-B-E-2M-176 REV A2 CFLASH 2M
Packaging: Bulk
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
auf Bestellung 1548 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 17.68 EUR |
CYT2B98CACQ0AZEGS |
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Hersteller: Infineon Technologies
Description: TVII-B-E-2M-176 REV A2 CFLASH 2M
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
Description: TVII-B-E-2M-176 REV A2 CFLASH 2M
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 31.15 EUR |
10+ | 28.63 EUR |
40+ | 27.44 EUR |
80+ | 24.18 EUR |
240+ | 22.99 EUR |
IPP60R060C7XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
Description: MOSFET N-CH 600V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
auf Bestellung 648 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.44 EUR |
50+ | 8.33 EUR |
100+ | 7.45 EUR |
500+ | 6.57 EUR |
FS3L25R12W2H3PB11BPSA1 |
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 141.63 EUR |
18+ | 129.28 EUR |
CY8C20247S-24LKXI |
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Hersteller: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
auf Bestellung 978 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.81 EUR |
CY8C20247S-24LKXI |
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Hersteller: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY26114ZC |
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Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock Generator, Fanout Distribution, Multiplexer
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock Generator, Fanout Distribution, Multiplexer
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IDK16G120C5XTMA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 7.28 EUR |
FF900R17ME7WB11BPSA1 |
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Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93800 pF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93800 pF @ 25 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 729.04 EUR |
12+ | 707.11 EUR |
IRG4IBC20FDPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 14.3A 34W TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 250µJ (on), 640µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 14.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 64 A
Power - Max: 34 W
Description: IGBT 600V 14.3A 34W TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 250µJ (on), 640µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 14.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 64 A
Power - Max: 34 W
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
187+ | 2.62 EUR |
FF1800R12IE5BPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1800A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
Description: IGBT MOD 1200V 1800A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1857.22 EUR |
F3L15MR12W2M1B69BOMA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 238.7 EUR |
F3L15MR12W2M1B69BOMA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
Produkt ist nicht verfügbar
FD300R12KS4HOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 295.38 EUR |
FF300R12ME3BOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 500A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Description: IGBT MOD 1200V 500A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 308.35 EUR |
FF300R12ME3BOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 500A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Description: IGBT MOD 1200V 500A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Produkt ist nicht verfügbar
TDA16847 |
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Hersteller: Infineon Technologies
Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
424+ | 1.15 EUR |
IDW32G65C5BXKSA2 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 21.91 EUR |
10+ | 19.31 EUR |
240+ | 16.17 EUR |
1EDI05I12AHXUMA1 |
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Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Produkt ist nicht verfügbar
1EDI05I12AHXUMA1 |
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Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Produkt ist nicht verfügbar
1EDI30J12CPXUMA1 |
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Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO19-4
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Supplier Device Package: PG-DSO-19-4
Rise / Fall Time (Typ): 23ns, 22ns
Number of Channels: 1
Voltage - Output Supply: 4.75V ~ 17.5V
Description: DIGITAL ISO 1CH GATE DVR DSO19-4
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Supplier Device Package: PG-DSO-19-4
Rise / Fall Time (Typ): 23ns, 22ns
Number of Channels: 1
Voltage - Output Supply: 4.75V ~ 17.5V
auf Bestellung 46670 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
120+ | 4.14 EUR |
1EDI3051EVALBOARDTOBO2 |
Hersteller: Infineon Technologies
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 223.96 EUR |
1EDI303XASEVALBOARDTOBO1 |
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Hersteller: Infineon Technologies
Description: 1EDI303XAS EVALBOARD
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI303xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Description: 1EDI303XAS EVALBOARD
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI303xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 234.64 EUR |
1EDI3050EVALBOARDTOBO1 |
Hersteller: Infineon Technologies
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 234.64 EUR |
1EDI3050ASXUMA1 |
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Hersteller: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
1EDI3050ASXUMA1 |
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Hersteller: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
auf Bestellung 766 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.07 EUR |
10+ | 10 EUR |
25+ | 9.54 EUR |
100+ | 8.28 EUR |
250+ | 7.91 EUR |
500+ | 7.21 EUR |
1EDI3051ASXUMA1 |
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Hersteller: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
1EDI3051ASXUMA1 |
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Hersteller: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
ITD50N04S4L07ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Supplier Device Package: PG-TO252-5-311
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Supplier Device Package: PG-TO252-5-311
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
IRS2336DJPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
DZ950N44KHPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.4KV 950A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4400 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
Description: DIODE GEN PURP 4.4KV 950A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4400 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1297.05 EUR |
DZ950N44KS02HPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4.4KV 950A PB70-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: BG-PB70-1
Operating Temperature - Junction: 160°C (Max)
Voltage - DC Reverse (Vr) (Max): 4400 V
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
Description: DIODE GEN PURP 4.4KV 950A PB70-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: BG-PB70-1
Operating Temperature - Junction: 160°C (Max)
Voltage - DC Reverse (Vr) (Max): 4400 V
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
Produkt ist nicht verfügbar
CY8C20524-12PVXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
MB39A112PFT-G-BND-ERE1 |
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Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 2.6MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: 20-TSSOP
Synchronous Rectifier: No
Control Features: Soft Start
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: No
Number of Outputs: 3
Description: IC REG CTRLR BUCK 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 2.6MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: 20-TSSOP
Synchronous Rectifier: No
Control Features: Soft Start
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: No
Number of Outputs: 3
Produkt ist nicht verfügbar
MB39A135PFT-G-JN-ERE1 |
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Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
MB39A135PFT-G-JN-ERE1 |
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Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
MB39A134PFT-G-BND-ERE1 |
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Hersteller: Infineon Technologies
Description: IC BATT PWR LI-ION 2-4C 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Number of Cells: 2 ~ 4
Mounting Type: Surface Mount
Function: Power Management
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature, Under Voltage
Description: IC BATT PWR LI-ION 2-4C 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Number of Cells: 2 ~ 4
Mounting Type: Surface Mount
Function: Power Management
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature, Under Voltage
Produkt ist nicht verfügbar
IPP027N08N5XKSA1 |
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Produkt ist nicht verfügbar
EVAL1ED3142MU12FSICTOBO1 |
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auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 145.25 EUR |
CY7C1020B-12VXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 512KBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 512KBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2047 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
202+ | 2.42 EUR |
CY7S1049G30-10VXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 12.92 EUR |