auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.09 EUR |
| 10+ | 3.92 EUR |
| 100+ | 3.15 EUR |
| 250+ | 2.96 EUR |
| 500+ | 2.31 EUR |
| 1000+ | 1.99 EUR |
| 3000+ | 1.92 EUR |
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Technische Details 2ED2778S01GXTMA1 Infineon Technologies
Description: 2ED2778S01GXTMA1, Packaging: Box, Package / Case: 10-VFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 7V ~ 18V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 140 V, Supplier Device Package: PG-VSON-10-5, Rise / Fall Time (Typ): 24ns, 12ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2V, Current - Peak Output (Source, Sink): 4A, 8A.
Weitere Produktangebote 2ED2778S01GXTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2ED2778S01GXTMA1 | Hersteller : Infineon Technologies |
Description: 2ED2778S01GXTMA1 Packaging: Box Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 7V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 140 V Supplier Device Package: PG-VSON-10-5 Rise / Fall Time (Typ): 24ns, 12ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 4A, 8A |
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