IDK16G120C5XTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 7.28 EUR |
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Technische Details IDK16G120C5XTMA1 Infineon Technologies
Description: DIODE SIL CARB 1.2KV 40A TO263-1, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Current - Average Rectified (Io): 40A, Supplier Device Package: PG-TO263-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A, Current - Reverse Leakage @ Vr: 80 µA @ 1200 V.
Weitere Produktangebote IDK16G120C5XTMA1 nach Preis ab 8.09 EUR bis 15.91 EUR
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IDK16G120C5XTMA1 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 1.2KV 40A TO263-1 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
auf Bestellung 1028 Stücke: Lieferzeit 10-14 Tag (e) |
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IDK16G120C5XTMA1 | Hersteller : Infineon Technologies | Schottky Diodes & Rectifiers SIC DISCRETE |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IDK16G120C5XTMA1 | Hersteller : INFINEON TECHNOLOGIES | IDK16G120C5XTMA1 SMD Schottky diodes |
Produkt ist nicht verfügbar |