IDW32G65C5BXKSA2 Infineon Technologies
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.21 EUR |
10+ | 16.21 EUR |
25+ | 16.17 EUR |
50+ | 16.14 EUR |
100+ | 15.7 EUR |
240+ | 13.69 EUR |
1200+ | 12.57 EUR |
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Technische Details IDW32G65C5BXKSA2 Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 470pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: PG-TO247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Weitere Produktangebote IDW32G65C5BXKSA2 nach Preis ab 16.17 EUR bis 21.91 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IDW32G65C5BXKSA2 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 650V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 470pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IDW32G65C5BXKSA2 | Hersteller : Infineon Technologies | 650V SiC Schottky Diode |
Produkt ist nicht verfügbar |
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IDW32G65C5BXKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16Ax2; 188W; PG-TO247-3 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A x2 Power dissipation: 188W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 74A Max. forward voltage: 1.8V Leakage current: 3.2µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IDW32G65C5BXKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16Ax2; 188W; PG-TO247-3 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A x2 Power dissipation: 188W Semiconductor structure: common cathode; double Case: PG-TO247-3 Kind of package: tube Max. forward impulse current: 74A Max. forward voltage: 1.8V Leakage current: 3.2µA |
Produkt ist nicht verfügbar |