AIKQ100N60CTXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IC DISCRETE 600V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Grade: Automotive
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
Qualification: AEC-Q101
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.33 EUR |
| 10+ | 14.1 EUR |
| 30+ | 13.51 EUR |
| 120+ | 12.86 EUR |
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Technische Details AIKQ100N60CTXKSA1 Infineon Technologies
Description: IC DISCRETE 600V TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A, Supplier Device Package: PG-TO247-3-46, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/290ns, Switching Energy: 3.1mJ (on), 2.5mJ (off), Test Condition: 400V, 100A, 3.6Ohm, 15V, Gate Charge: 610 nC, Grade: Automotive, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 714 W, Qualification: AEC-Q101.
Weitere Produktangebote AIKQ100N60CTXKSA1 nach Preis ab 13.52 EUR bis 15.51 EUR
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AIKQ100N60CTXKSA1 | Hersteller : Infineon Technologies |
IGBTs DISCRETES |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIKQ100N60CTXKSA1 | Hersteller : Infineon Technologies |
IGBT in TRENCHSTOP and Field stop technology |
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AIKQ100N60CTXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Power dissipation: 714W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 610nC Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 400A Turn-on time: 68ns Turn-off time: 321ns Type of transistor: IGBT Anzahl je Verpackung: 240 Stücke |
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AIKQ100N60CTXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Power dissipation: 714W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 610nC Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 400A Turn-on time: 68ns Turn-off time: 321ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |