IPC302N12N3X1SA1 Infineon Technologies
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Technische Details IPC302N12N3X1SA1 Infineon Technologies
Description: MOSFET N-CH 120V 1A SAWN ON FOIL, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tj), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V, Vgs(th) (Max) @ Id: 4V @ 275µA, Supplier Device Package: Sawn on foil, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 120 V.
Weitere Produktangebote IPC302N12N3X1SA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IPC302N12N3X1SA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 120V 1A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 275µA Supplier Device Package: Sawn on foil Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 120 V |
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