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BSM50GB120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 115A 460W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
auf Bestellung 1630 Stücke:
Lieferzeit 10-14 Tag (e)
5+107.8 EUR
Mindestbestellmenge: 5
IRF6775MTRPBF IRF6775MTRPBF Infineon Technologies irf6775mpbf.pdf?fileId=5546d462533600a4015355ed84751aa0 Description: MOSFET N-CH 150V 4.9A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1411 pF @ 25 V
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)
4800+1.2 EUR
Mindestbestellmenge: 4800
IRF6775MTRPBF IRF6775MTRPBF Infineon Technologies irf6775mpbf.pdf?fileId=5546d462533600a4015355ed84751aa0 Description: MOSFET N-CH 150V 4.9A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1411 pF @ 25 V
auf Bestellung 13202 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.89 EUR
10+ 1.86 EUR
100+ 1.28 EUR
500+ 1.2 EUR
Mindestbestellmenge: 7
IRF6637TRPBF IRF6637TRPBF Infineon Technologies IRSDS10494-1.pdf?t.download=true&u=5oefqw Description: IRF6637 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ MP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 15 V
auf Bestellung 4686 Stücke:
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332+1.45 EUR
Mindestbestellmenge: 332
CYW920719B2Q40EVB-01 CYW920719B2Q40EVB-01 Infineon Technologies Infineon-CYW920719B2Q40EVB-01_Evaluation_Kit_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f026db619bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EVAL KIT BOARD CYW20719 USB CONN
Packaging: Box
For Use With/Related Products: CYW20719
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s), Cable(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+78.2 EUR
CY9BF321LPMC-GNE2 CY9BF321LPMC-GNE2 Infineon Technologies Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF321MPMC-GNE2 Infineon Technologies Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c Description: IC MCU 32BIT 96KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF321KPMC-GNE2 CY9BF321KPMC-GNE2 Infineon Technologies Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c Description: IC MCU 32BIT 96KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 14x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 35
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF321LPMC1-GNE2 Infineon Technologies Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C4148AZES575XQLA1 Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
CY8C4148AZES585XQLA1 Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
S29GL01GS11TFB010YZK000 Infineon Technologies Description: INFINEON
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BCR162E6327HTSA1 BCR162E6327HTSA1 Infineon Technologies bcr162series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402b1a4b02cf Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 328200 Stücke:
Lieferzeit 10-14 Tag (e)
9746+0.047 EUR
Mindestbestellmenge: 9746
XDPE12254C0000XUMA1 XDPE12254C0000XUMA1 Infineon Technologies Infineon-XDPE12254C-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e465cfdc406d2&ack=t Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.2V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+4.76 EUR
Mindestbestellmenge: 4000
XDPE12254C0000XUMA1 XDPE12254C0000XUMA1 Infineon Technologies Infineon-XDPE12254C-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e465cfdc406d2&ack=t Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.2V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.47 EUR
10+ 8.52 EUR
25+ 8.05 EUR
100+ 6.98 EUR
250+ 6.62 EUR
500+ 5.94 EUR
1000+ 5.01 EUR
Mindestbestellmenge: 2
CYPD717140LQXQTXUMA1 CYPD717140LQXQTXUMA1 Infineon Technologies Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d Description: EZ-PD CCG7SC SINGLE-PORT USB TYP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: USB, Type-C Controller
Current - Supply: 50mA
Supplier Device Package: PG-VQFN-40-801
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.87 EUR
10+ 7.06 EUR
25+ 6.68 EUR
80+ 5.79 EUR
230+ 5.49 EUR
440+ 4.93 EUR
945+ 4.15 EUR
Mindestbestellmenge: 3
CYPD717140LQXQXQLA1 CYPD717140LQXQXQLA1 Infineon Technologies Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d Description: EZ-PD CCG7SC SINGLE-PORT USB TYP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: USB, Type-C Controller
Current - Supply: 50mA
Supplier Device Package: PG-VQFN-40-801
auf Bestellung 1027 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.87 EUR
10+ 7.06 EUR
25+ 6.68 EUR
80+ 5.79 EUR
230+ 5.49 EUR
490+ 4.93 EUR
980+ 4.15 EUR
Mindestbestellmenge: 3
XDPE15284D0000XUMA1 XDPE15284D0000XUMA1 Infineon Technologies Infineon-XDPE15284D-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018042f2425a00cf Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
Produkt ist nicht verfügbar
XDPE15284D0000XUMA1 XDPE15284D0000XUMA1 Infineon Technologies Infineon-XDPE15284D-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018042f2425a00cf Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 1193 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.26 EUR
10+ 9.27 EUR
25+ 8.84 EUR
100+ 7.67 EUR
250+ 7.33 EUR
500+ 6.68 EUR
1000+ 5.82 EUR
Mindestbestellmenge: 2
XMC6521SCQ040XXUMA1 Infineon Technologies Infineon-XMCxxxxSC-DataSheet-v02_50-EN.pdf?fileId=5546d46269e1c019016ae9db0eab1d6a Description: XMC1000 PG-VQFN-40
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BCX5116H6433XTMA1 BCX5116H6433XTMA1 Infineon Technologies bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Description: TRANS PNP 45V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
1893+0.25 EUR
Mindestbestellmenge: 1893
BCX51H6327XTSA1 BCX51H6327XTSA1 Infineon Technologies bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Description: TRANS PNP 45V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 31190 Stücke:
Lieferzeit 10-14 Tag (e)
1893+0.25 EUR
Mindestbestellmenge: 1893
BCX5116H6327XTSA1 BCX5116H6327XTSA1 Infineon Technologies Infineon-BCX51_BCX52_BCX53-DS-v01_01-en.pdf?fileId=db3a3043156fd573011589c08423034d Description: TRANS PNP 45V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 71410 Stücke:
Lieferzeit 10-14 Tag (e)
1893+0.25 EUR
Mindestbestellmenge: 1893
IRF2204SPBF IRF2204SPBF Infineon Technologies irf2204spbf.pdf?fileId=5546d462533600a4015355db5e2218d8 Description: MOSFET N-CH 40V 170A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
auf Bestellung 903 Stücke:
Lieferzeit 10-14 Tag (e)
162+2.92 EUR
Mindestbestellmenge: 162
TDA48632XKLA1 TDA48632XKLA1 Infineon Technologies tda4863-2_v2-1.pdf?folderId=db3a304412b407950112b418029a24aa&fileId=db3a304412b407950112b41802de24ab Description: IC PFC CTRLR DCM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 20 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
630+0.77 EUR
Mindestbestellmenge: 630
BSC152N15LS5ATMA1 BSC152N15LS5ATMA1 Infineon Technologies BSC152N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 60µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V
Produkt ist nicht verfügbar
BSC105N15LS5ATMA1 BSC105N15LS5ATMA1 Infineon Technologies BSC105N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 91µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V
Produkt ist nicht verfügbar
CY62128ELL-45SXI CY62128ELL-45SXI Infineon Technologies Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 9290 Stücke:
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4+4.4 EUR
10+ 3.9 EUR
25+ 3.72 EUR
50+ 3.59 EUR
100+ 3.46 EUR
250+ 3.3 EUR
500+ 3.22 EUR
Mindestbestellmenge: 4
IRS2011PBF IRS2011PBF Infineon Technologies INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
auf Bestellung 8900 Stücke:
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160+3.02 EUR
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IGC18T120T8LX1SA2 Infineon Technologies Infineon-IGC18T120T8L_L7633V-DS-v01_01-en.pdf?fileId=db3a3043382e83730138326238034b51 Description: IGBT 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Produkt ist nicht verfügbar
SKB15N60ATMA1 SKB15N60ATMA1 Infineon Technologies SKB15N60.pdf Description: IGBT 600V 31A 139W TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
201+2.41 EUR
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CY91F587LBPMC-GTE1 CY91F587LBPMC-GTE1 Infineon Technologies download Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SPS04N60C3BKMA1 SPS04N60C3BKMA1 Infineon Technologies SPS04N60C3.pdf Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
462+1.02 EUR
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SPP04N60C3XKSA1 SPP04N60C3XKSA1 Infineon Technologies SPP_A04N60C3_Rev.3.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd6a14900 Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 3000 Stücke:
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302+1.55 EUR
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BC860CE6359HTMA1 BC860CE6359HTMA1 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 100000 Stücke:
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BC860BWH6327XTSA1 BC860BWH6327XTSA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 62537 Stücke:
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BC860CWH6327XTSA1 BC860CWH6327XTSA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 474000 Stücke:
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BC860BE6327HTSA1 BC860BE6327HTSA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 278638 Stücke:
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9616+0.047 EUR
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CY7C1019CV33-12VC CY7C1019CV33-12VC Infineon Technologies CY7C1019CV33%20RevG.pdf Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY62167G18-55ZXIT CY62167G18-55ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C3866LTI-030 CY8C3866LTI-030 Infineon Technologies Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 395 Stücke:
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21+23.78 EUR
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BTG70902EPLDAUGHBRDTOBO1 BTG70902EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7090-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-2EPL
auf Bestellung 3 Stücke:
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1+77.4 EUR
BTG70901EPLDAUGHBRDTOBO1 BTG70901EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7090-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-1EPL
auf Bestellung 3 Stücke:
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1+77.4 EUR
BTG70502EPLDAUGHBRDTOBO1 BTG70502EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7050-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-2EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+78.18 EUR
BTG70501EPLDAUGHBRDTOBO1 BTG70501EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7050-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-1EPL
auf Bestellung 2 Stücke:
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1+77.4 EUR
FF450R17ME3BOSA1 FF450R17ME3BOSA1 Infineon Technologies Infineon-FF450R17ME3-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d01145046701403b2 Description: IGBT MOD 1700V 605A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 605 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
Produkt ist nicht verfügbar
FZ1500R33HE3S6BOSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
ISP25DP06NMXTSA1 ISP25DP06NMXTSA1 Infineon Technologies Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399 Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 3000 Stücke:
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1000+0.52 EUR
2000+ 0.47 EUR
3000+ 0.45 EUR
Mindestbestellmenge: 1000
ISP25DP06NMXTSA1 ISP25DP06NMXTSA1 Infineon Technologies Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399 Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 3703 Stücke:
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10+1.8 EUR
16+ 1.12 EUR
100+ 0.74 EUR
500+ 0.57 EUR
Mindestbestellmenge: 10
BAT6307WH6327XTSA1 BAT6307WH6327XTSA1 Infineon Technologies bat63series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151817843c0df4 Description: DIODE ARRAY SCHOTTKY 3V SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-3D
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 88611 Stücke:
Lieferzeit 10-14 Tag (e)
3463+0.14 EUR
Mindestbestellmenge: 3463
IPA60R145CFD7XKSA1 IPA60R145CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: HIGH POWER_NEW
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
auf Bestellung 428 Stücke:
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AUIRL3705ZS AUIRL3705ZS Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
auf Bestellung 2400 Stücke:
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205+2.37 EUR
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AUIRL3705ZS AUIRL3705ZS Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Produkt ist nicht verfügbar
IRFP4310ZPBFXKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Produkt ist nicht verfügbar
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 Infineon Technologies Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84 Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.67 EUR
Mindestbestellmenge: 5000
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 Infineon Technologies Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84 Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.78 EUR
10+ 3.4 EUR
25+ 3.21 EUR
100+ 2.73 EUR
250+ 2.57 EUR
500+ 2.25 EUR
1000+ 1.86 EUR
2500+ 1.73 EUR
Mindestbestellmenge: 5
CG10218AA Infineon Technologies Description: IC FRAM
Packaging: Tube
Memory Format: FRAM
Produkt ist nicht verfügbar
CG10218AAT Infineon Technologies Description: IC FRAM
Packaging: Tape & Reel (TR)
Memory Format: FRAM
Produkt ist nicht verfügbar
IPG20N06S4L26AATMA1 IPG20N06S4L26AATMA1 Infineon Technologies Infineon-IPG20N06S4L_26A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454e0c275177 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2082 Stücke:
Lieferzeit 10-14 Tag (e)
602+0.79 EUR
Mindestbestellmenge: 602
BCP5116H6327XTSA1 BCP5116H6327XTSA1 Infineon Technologies bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9 Description: TRANS PNP 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
1225+0.4 EUR
Mindestbestellmenge: 1225
BSM50GB120DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 115A 460W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
auf Bestellung 1630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+107.8 EUR
Mindestbestellmenge: 5
IRF6775MTRPBF irf6775mpbf.pdf?fileId=5546d462533600a4015355ed84751aa0
IRF6775MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 4.9A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1411 pF @ 25 V
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4800+1.2 EUR
Mindestbestellmenge: 4800
IRF6775MTRPBF irf6775mpbf.pdf?fileId=5546d462533600a4015355ed84751aa0
IRF6775MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 4.9A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1411 pF @ 25 V
auf Bestellung 13202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.89 EUR
10+ 1.86 EUR
100+ 1.28 EUR
500+ 1.2 EUR
Mindestbestellmenge: 7
IRF6637TRPBF IRSDS10494-1.pdf?t.download=true&u=5oefqw
IRF6637TRPBF
Hersteller: Infineon Technologies
Description: IRF6637 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ MP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 15 V
auf Bestellung 4686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
332+1.45 EUR
Mindestbestellmenge: 332
CYW920719B2Q40EVB-01 Infineon-CYW920719B2Q40EVB-01_Evaluation_Kit_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f026db619bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYW920719B2Q40EVB-01
Hersteller: Infineon Technologies
Description: EVAL KIT BOARD CYW20719 USB CONN
Packaging: Box
For Use With/Related Products: CYW20719
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s), Cable(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+78.2 EUR
CY9BF321LPMC-GNE2 Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c
CY9BF321LPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF321MPMC-GNE2 Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF321KPMC-GNE2 Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c
CY9BF321KPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 14x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 35
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY9BF321LPMC1-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C4148AZES575XQLA1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
CY8C4148AZES585XQLA1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
S29GL01GS11TFB010YZK000
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BCR162E6327HTSA1 bcr162series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402b1a4b02cf
BCR162E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 328200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9746+0.047 EUR
Mindestbestellmenge: 9746
XDPE12254C0000XUMA1 Infineon-XDPE12254C-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e465cfdc406d2&ack=t
XDPE12254C0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.2V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+4.76 EUR
Mindestbestellmenge: 4000
XDPE12254C0000XUMA1 Infineon-XDPE12254C-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e465cfdc406d2&ack=t
XDPE12254C0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.2V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.47 EUR
10+ 8.52 EUR
25+ 8.05 EUR
100+ 6.98 EUR
250+ 6.62 EUR
500+ 5.94 EUR
1000+ 5.01 EUR
Mindestbestellmenge: 2
CYPD717140LQXQTXUMA1 Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d
CYPD717140LQXQTXUMA1
Hersteller: Infineon Technologies
Description: EZ-PD CCG7SC SINGLE-PORT USB TYP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: USB, Type-C Controller
Current - Supply: 50mA
Supplier Device Package: PG-VQFN-40-801
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.87 EUR
10+ 7.06 EUR
25+ 6.68 EUR
80+ 5.79 EUR
230+ 5.49 EUR
440+ 4.93 EUR
945+ 4.15 EUR
Mindestbestellmenge: 3
CYPD717140LQXQXQLA1 Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d
CYPD717140LQXQXQLA1
Hersteller: Infineon Technologies
Description: EZ-PD CCG7SC SINGLE-PORT USB TYP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: USB, Type-C Controller
Current - Supply: 50mA
Supplier Device Package: PG-VQFN-40-801
auf Bestellung 1027 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.87 EUR
10+ 7.06 EUR
25+ 6.68 EUR
80+ 5.79 EUR
230+ 5.49 EUR
490+ 4.93 EUR
980+ 4.15 EUR
Mindestbestellmenge: 3
XDPE15284D0000XUMA1 Infineon-XDPE15284D-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018042f2425a00cf
XDPE15284D0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
Produkt ist nicht verfügbar
XDPE15284D0000XUMA1 Infineon-XDPE15284D-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018042f2425a00cf
XDPE15284D0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 1193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.26 EUR
10+ 9.27 EUR
25+ 8.84 EUR
100+ 7.67 EUR
250+ 7.33 EUR
500+ 6.68 EUR
1000+ 5.82 EUR
Mindestbestellmenge: 2
XMC6521SCQ040XXUMA1 Infineon-XMCxxxxSC-DataSheet-v02_50-EN.pdf?fileId=5546d46269e1c019016ae9db0eab1d6a
Hersteller: Infineon Technologies
Description: XMC1000 PG-VQFN-40
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BCX5116H6433XTMA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
BCX5116H6433XTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1893+0.25 EUR
Mindestbestellmenge: 1893
BCX51H6327XTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
BCX51H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 31190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1893+0.25 EUR
Mindestbestellmenge: 1893
BCX5116H6327XTSA1 Infineon-BCX51_BCX52_BCX53-DS-v01_01-en.pdf?fileId=db3a3043156fd573011589c08423034d
BCX5116H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 71410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1893+0.25 EUR
Mindestbestellmenge: 1893
IRF2204SPBF irf2204spbf.pdf?fileId=5546d462533600a4015355db5e2218d8
IRF2204SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 170A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
auf Bestellung 903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
162+2.92 EUR
Mindestbestellmenge: 162
TDA48632XKLA1 tda4863-2_v2-1.pdf?folderId=db3a304412b407950112b418029a24aa&fileId=db3a304412b407950112b41802de24ab
TDA48632XKLA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR DCM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 20 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
630+0.77 EUR
Mindestbestellmenge: 630
BSC152N15LS5ATMA1 BSC152N15LS5_Rev2.0_12-13-23.pdf
BSC152N15LS5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 60µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V
Produkt ist nicht verfügbar
BSC105N15LS5ATMA1 BSC105N15LS5_Rev2.0_12-13-23.pdf
BSC105N15LS5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 91µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V
Produkt ist nicht verfügbar
CY62128ELL-45SXI Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
CY62128ELL-45SXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 9290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.4 EUR
10+ 3.9 EUR
25+ 3.72 EUR
50+ 3.59 EUR
100+ 3.46 EUR
250+ 3.3 EUR
500+ 3.22 EUR
Mindestbestellmenge: 4
IRS2011PBF description INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
IRS2011PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
auf Bestellung 8900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
160+3.02 EUR
Mindestbestellmenge: 160
IGC18T120T8LX1SA2 Infineon-IGC18T120T8L_L7633V-DS-v01_01-en.pdf?fileId=db3a3043382e83730138326238034b51
Hersteller: Infineon Technologies
Description: IGBT 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Produkt ist nicht verfügbar
SKB15N60ATMA1 SKB15N60.pdf
SKB15N60ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 31A 139W TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
201+2.41 EUR
Mindestbestellmenge: 201
CY91F587LBPMC-GTE1 download
CY91F587LBPMC-GTE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SPS04N60C3BKMA1 SPS04N60C3.pdf
SPS04N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
462+1.02 EUR
Mindestbestellmenge: 462
SPP04N60C3XKSA1 SPP_A04N60C3_Rev.3.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd6a14900
SPP04N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
302+1.55 EUR
Mindestbestellmenge: 302
BC860CE6359HTMA1 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC860CE6359HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13172+0.031 EUR
Mindestbestellmenge: 13172
BC860BWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC860BWH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 62537 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9158+0.047 EUR
Mindestbestellmenge: 9158
BC860CWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC860CWH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 474000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9158+0.047 EUR
Mindestbestellmenge: 9158
BC860BE6327HTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC860BE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 278638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9616+0.047 EUR
Mindestbestellmenge: 9616
CY7C1019CV33-12VC CY7C1019CV33%20RevG.pdf
CY7C1019CV33-12VC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY62167G18-55ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G18-55ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CY8C3866LTI-030 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3866LTI-030
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Bulk
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+23.78 EUR
Mindestbestellmenge: 21
BTG70902EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70902EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7090-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-2EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+77.4 EUR
BTG70901EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70901EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7090-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-1EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+77.4 EUR
BTG70502EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70502EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7050-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-2EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+78.18 EUR
BTG70501EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70501EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7050-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-1EPL
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+77.4 EUR
FF450R17ME3BOSA1 Infineon-FF450R17ME3-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d01145046701403b2
FF450R17ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 605A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 605 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
Produkt ist nicht verfügbar
FZ1500R33HE3S6BOSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
ISP25DP06NMXTSA1 Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399
ISP25DP06NMXTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.52 EUR
2000+ 0.47 EUR
3000+ 0.45 EUR
Mindestbestellmenge: 1000
ISP25DP06NMXTSA1 Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399
ISP25DP06NMXTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 3703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.8 EUR
16+ 1.12 EUR
100+ 0.74 EUR
500+ 0.57 EUR
Mindestbestellmenge: 10
BAT6307WH6327XTSA1 bat63series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151817843c0df4
BAT6307WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 3V SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-3D
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 88611 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3463+0.14 EUR
Mindestbestellmenge: 3463
IPA60R145CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPA60R145CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
181+2.69 EUR
Mindestbestellmenge: 181
AUIRL3705ZS auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
205+2.37 EUR
Mindestbestellmenge: 205
AUIRL3705ZS auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Produkt ist nicht verfügbar
IRFP4310ZPBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Produkt ist nicht verfügbar
2EDL8033G4BXTMA1 Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84
2EDL8033G4BXTMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.67 EUR
Mindestbestellmenge: 5000
2EDL8033G4BXTMA1 Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84
2EDL8033G4BXTMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.78 EUR
10+ 3.4 EUR
25+ 3.21 EUR
100+ 2.73 EUR
250+ 2.57 EUR
500+ 2.25 EUR
1000+ 1.86 EUR
2500+ 1.73 EUR
Mindestbestellmenge: 5
CG10218AA
Hersteller: Infineon Technologies
Description: IC FRAM
Packaging: Tube
Memory Format: FRAM
Produkt ist nicht verfügbar
CG10218AAT
Hersteller: Infineon Technologies
Description: IC FRAM
Packaging: Tape & Reel (TR)
Memory Format: FRAM
Produkt ist nicht verfügbar
IPG20N06S4L26AATMA1 Infineon-IPG20N06S4L_26A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454e0c275177
IPG20N06S4L26AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2082 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
602+0.79 EUR
Mindestbestellmenge: 602
BCP5116H6327XTSA1 bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9
BCP5116H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1225+0.4 EUR
Mindestbestellmenge: 1225
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