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BSC105N15LS5ATMA1

BSC105N15LS5ATMA1 Infineon Technologies

Infineon_BSC105N15LS5_DataSheet_v02_00_EN-3398000.pdf Hersteller: Infineon Technologies
MOSFET TRENCH >=100V
auf Bestellung 1939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.59 EUR
10+ 2.97 EUR
100+ 2.36 EUR
250+ 2.18 EUR
500+ 1.99 EUR
1000+ 1.7 EUR
2000+ 1.62 EUR
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Technische Details BSC105N15LS5ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 91µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V.

Weitere Produktangebote BSC105N15LS5ATMA1 nach Preis ab 1.65 EUR bis 3.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSC105N15LS5ATMA1 BSC105N15LS5ATMA1 Hersteller : Infineon Technologies BSC105N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 91µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V
auf Bestellung 3100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.61 EUR
10+ 3.25 EUR
25+ 3.06 EUR
100+ 2.61 EUR
250+ 2.45 EUR
500+ 2.14 EUR
1000+ 1.78 EUR
2500+ 1.65 EUR
Mindestbestellmenge: 5
BSC105N15LS5ATMA1 Hersteller : Infineon Technologies infineon-bsc105n15ls5-datasheet-v02_00-en.pdf N-Channel MOSFET
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
48+3.25 EUR
Mindestbestellmenge: 48
BSC105N15LS5ATMA1 Hersteller : Infineon Technologies infineon-bsc105n15ls5-datasheet-v02_00-en.pdf N-Channel MOSFET
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
42+3.71 EUR
48+ 3.12 EUR
50+ 2.87 EUR
Mindestbestellmenge: 42
BSC105N15LS5ATMA1 Hersteller : Infineon Technologies infineon-bsc105n15ls5-datasheet-v02_00-en.pdf N-Channel MOSFET
Produkt ist nicht verfügbar
BSC105N15LS5ATMA1 Hersteller : Infineon Technologies BSC105N15LS5_Rev2.0_12-13-23.pdf BSC105N15LS5ATMA1
Produkt ist nicht verfügbar
BSC105N15LS5ATMA1 BSC105N15LS5ATMA1 Hersteller : Infineon Technologies BSC105N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 91µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V
Produkt ist nicht verfügbar