BSM50GB120DLCHOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 115A 460W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: IGBT MOD 1200V 115A 460W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
auf Bestellung 2285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 108.6 EUR |
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Technische Details BSM50GB120DLCHOSA1 Infineon Technologies
Description: IGBT MOD 1200V 115A 460W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 115 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 460 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Weitere Produktangebote BSM50GB120DLCHOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BSM50GB120DLCHOSA1 | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - BSM50GB120DLCHOSA1 - BSM50GB120 INSULATED GATE BIPOLAR TRANStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2295 Stücke: Lieferzeit 14-21 Tag (e) |
||
| BSM50GB120DLCHOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 115A 460000mW |
Produkt ist nicht verfügbar |
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| BSM50GB120DLCHOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 115A 460W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 115 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 460 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
Produkt ist nicht verfügbar |