Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140481) > Seite 2329 nach 2342
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IPA028N04NM3SXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP Mounting: THT Drain current: 63A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 356A Case: TO220FP Drain-source voltage: 40V |
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IPA028N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP Mounting: THT Drain current: 62A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: tube Gate charge: 155nC Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220FP Drain-source voltage: 80V |
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1EDC60I12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Technology: EiceDRIVER™ Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -6...6A Topology: single transistor Voltage class: 600/650/1200V Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
auf Bestellung 703 Stücke: Lieferzeit 14-21 Tag (e) |
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| IAUC70N08S5N074ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 47A Pulsed drain current: 280A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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IRLHS6376TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2 Case: PQFN2X2 Mounting: SMD Kind of package: reel Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 30V Drain current: 3.6A Type of transistor: N-MOSFET Power dissipation: 1.5W |
auf Bestellung 3874 Stücke: Lieferzeit 14-21 Tag (e) |
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| IKW25N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 150nC Kind of package: tube Turn-on time: 38ns Turn-off time: 490ns Features of semiconductor devices: integrated anti-parallel diode |
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IKW08T120FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 8A Power dissipation: 70W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 63ns Turn-off time: 520ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4368PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 350A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 380nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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| IKW40N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 179W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.5µs Features of semiconductor devices: integrated anti-parallel diode |
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IR2214SSPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SSOP24 Output current: -1.5...1A Power: 1.5W Number of channels: 2 Supply voltage: 10.4...20V DC Mounting: SMD Operating temperature: -40...125°C Voltage class: 0.6/1.2kV Turn-on time: 440ns Turn-off time: 440ns |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI50R250CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 114W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Kind of channel: enhanced |
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TD500N18KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 500A Max. load current: 900A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: screw Mechanical mounting: screw |
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| BSS131H6327 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhanced |
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IPP114N12N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Drain-source voltage: 120V Drain current: 75A On-state resistance: 11.4mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRS2184STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
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| IRS2453DSTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: ballast controller; gate driver; high-/low-side Case: SO14 Output current: -260...180mA Power: 1W Number of channels: 4 Supply voltage: 10...16.6V DC Mounting: SMD Operating temperature: -25...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns |
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IPP60R199CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 139W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IR21094STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
auf Bestellung 2379 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7853TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.3A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7607TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.8W; SO8 Mounting: SMD Case: SO8 Kind of package: reel Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Drain current: 6.5A Drain-source voltage: 20V Technology: HEXFET® Kind of channel: enhanced |
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| BBY5302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape Type of diode: varicap Max. off-state voltage: 6V Load current: 20mA Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape |
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| BAR6502VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape Mounting: SMD Case: SC79 Capacitance: 0.5pF Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode Leakage current: 20nA Kind of package: reel; tape Type of diode: varicap Features of semiconductor devices: PIN; RF |
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IRF7834TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 19A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FP50R06W2E3B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Case: AG-EASY2B-2 Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 175W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 2B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge |
Produkt ist nicht verfügbar |
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| BBY6602VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape Case: SC79 Mounting: SMD Kind of package: reel; tape Load current: 50mA Semiconductor structure: single diode Type of diode: varicap Features of semiconductor devices: RF Max. off-state voltage: 12V |
Produkt ist nicht verfügbar |
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BAS7002VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SC79; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Case: SC79 Max. forward impulse current: 0.1A Power dissipation: 0.25W |
auf Bestellung 2555 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR35PNH6327 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 1563 Stücke: Lieferzeit 14-21 Tag (e) |
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IDW20G65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W Case: PG-TO247-3 Mounting: THT Technology: CoolSiC™ 5G; SiC Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 87A Leakage current: 4.1µA Max. off-state voltage: 650V Power dissipation: 112W Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1.8V |
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| AIDW20S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 112W Case: TO247-3 Mounting: THT Application: automotive industry Technology: CoolSiC™ 5G; SiC Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 103A Max. off-state voltage: 650V Power dissipation: 112W Type of diode: Schottky rectifying |
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IDH06G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 30A Leakage current: 46µA Power dissipation: 54W Kind of package: tube Heatsink thickness: 1.17...1.37mm |
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TT500N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 500A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ500N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 500A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ500N18KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.8kV Load current: 500A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TZ600N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 1.53V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IPI60R125CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 208W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced |
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IPL60R125P7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 111W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 36nC Kind of package: reel Kind of channel: enhanced Version: ESD |
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IPDD60R125G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PG-HDSOP-10-1 Gate charge: 27nC Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Drain-source voltage: 600V Drain current: 20A On-state resistance: 0.125Ω Type of transistor: N-MOSFET Power dissipation: 120W |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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| IKFW90N60EH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3 Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Case: TO247-3 Power dissipation: 178W Technology: TRENCHSTOP™ Gate charge: 440nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 77A Pulsed collector current: 300A Turn-on time: 77ns Turn-off time: 237ns Type of transistor: IGBT |
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BSS83PH6327 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.33A Power: 0.36W Case: SOT23 On-state resistance: 2Ω Mounting: SMD |
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TD215N22KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw Max. forward impulse current: 7kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 2.2kV Max. load current: 410A Max. forward voltage: 1.8V Load current: 215A Semiconductor structure: double series Gate current: 200mA |
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TZ430N22KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2.2kV; 430A; BG-PB501-1 Max. forward impulse current: 14kA Gate current: 300mA Semiconductor structure: single thyristor Load current: 430A Max. forward voltage: 1.78V Max. off-state voltage: 2.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB501-1 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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TT425N16KOFHPSA3 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 471A; BG-PB60AT-1; screw Max. forward impulse current: 14.5kA Gate current: 250mA Semiconductor structure: double series Load current: 471A Max. forward voltage: 1.5V Max. off-state voltage: 1.6kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB60AT-1 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| FM24CL64B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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| FM24CL16B-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: I2C Memory organisation: 2kx8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C |
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| FM24CL16B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: I2C Memory organisation: 2kx8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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| FM24C64B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Supply voltage: 4.5...5.5V DC Clock frequency: 1MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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| CY62136EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Mb SRAM Case: VFBGA48 Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 45ns |
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| CY62136EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Mb SRAM Case: TSOP44 II Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 45ns |
Produkt ist nicht verfügbar |
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| CY62136FV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Mb SRAM Case: VFBGA48 Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 45ns |
Produkt ist nicht verfügbar |
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| CY62136FV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Mb SRAM Case: TSOP44 II Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 45ns |
Produkt ist nicht verfügbar |
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| CY62137EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY62137FV18LL-55BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...2.25V DC |
Produkt ist nicht verfügbar |
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| CY62137FV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY62137FV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY62137FV30LL-55ZSXET | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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| CY62138EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Mb SRAM Case: VFBGA36 Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx8bit Access time: 45ns |
Produkt ist nicht verfügbar |
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| CY62138FV30LL-45ZAXAT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Mb SRAM Case: STSOP32 Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx8bit Access time: 45ns |
Produkt ist nicht verfügbar |
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| CY62138FV30LL-45ZAXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 2Mb SRAM Case: STSOP32 Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx8bit Access time: 45ns |
Produkt ist nicht verfügbar |
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| S29AL008J55TFIR23 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Interface: CFI; parallel Operating temperature: -40...85°C Operating voltage: 3...3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Access time: 55ns Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Case: TSOP48 |
Produkt ist nicht verfügbar |
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| S29GL256S10DHA020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
| IPA028N04NM3SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Mounting: THT
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 356A
Case: TO220FP
Drain-source voltage: 40V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Mounting: THT
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 356A
Case: TO220FP
Drain-source voltage: 40V
Produkt ist nicht verfügbar
| IPA028N08N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Mounting: THT
Drain current: 62A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: tube
Gate charge: 155nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 80V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Mounting: THT
Drain current: 62A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: tube
Gate charge: 155nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 80V
Produkt ist nicht verfügbar
| 1EDC60I12AHXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -6...6A
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -6...6A
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.52 EUR |
| 23+ | 3.12 EUR |
| 25+ | 2.95 EUR |
| 26+ | 2.85 EUR |
| IAUC70N08S5N074ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRLHS6376TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 1.5W
auf Bestellung 3874 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 199+ | 0.36 EUR |
| 260+ | 0.28 EUR |
| 275+ | 0.26 EUR |
| IKW25N120CS7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Turn-off time: 490ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Turn-off time: 490ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IKW08T120FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 520ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 520ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 5.51 EUR |
| IRFP4368PBFXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 11.91 EUR |
| IKW40N120CS7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IR2214SSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SSOP24
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Turn-off time: 440ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SSOP24
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Turn-off time: 440ns
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 7.06 EUR |
| 12+ | 6.23 EUR |
| 13+ | 5.89 EUR |
| IPI50R250CPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TD500N18KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Max. load current: 900A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Max. load current: 900A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| BSS131H6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP114N12N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.69 EUR |
| 31+ | 2.32 EUR |
| 39+ | 1.86 EUR |
| 45+ | 1.62 EUR |
| 47+ | 1.53 EUR |
| IRS2184STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
| IRS2453DSTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
| IPP60R199CPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.75 EUR |
| 23+ | 3.13 EUR |
| 25+ | 2.96 EUR |
| IR21094STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 2379 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.29 EUR |
| 35+ | 2.1 EUR |
| 57+ | 1.27 EUR |
| 59+ | 1.22 EUR |
| 1000+ | 1.16 EUR |
| IRF7853TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7607TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.8W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 6.5A
Drain-source voltage: 20V
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.8W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 6.5A
Drain-source voltage: 20V
Technology: HEXFET®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BBY5302VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Produkt ist nicht verfügbar
| BAR6502VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Produkt ist nicht verfügbar
| IRF7834TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 19A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 19A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FP50R06W2E3B11BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
| BBY6602VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Case: SC79
Mounting: SMD
Kind of package: reel; tape
Load current: 50mA
Semiconductor structure: single diode
Type of diode: varicap
Features of semiconductor devices: RF
Max. off-state voltage: 12V
Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Case: SC79
Mounting: SMD
Kind of package: reel; tape
Load current: 50mA
Semiconductor structure: single diode
Type of diode: varicap
Features of semiconductor devices: RF
Max. off-state voltage: 12V
Produkt ist nicht verfügbar
| BAS7002VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SC79; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Case: SC79
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SC79; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Case: SC79
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
auf Bestellung 2555 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 291+ | 0.25 EUR |
| 353+ | 0.2 EUR |
| 388+ | 0.18 EUR |
| 810+ | 0.088 EUR |
| 857+ | 0.084 EUR |
| BCR35PNH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1563 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 185+ | 0.39 EUR |
| 560+ | 0.13 EUR |
| 610+ | 0.12 EUR |
| 640+ | 0.11 EUR |
| IDW20G65C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 87A
Leakage current: 4.1µA
Max. off-state voltage: 650V
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 87A
Leakage current: 4.1µA
Max. off-state voltage: 650V
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
| AIDW20S65C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 112W
Case: TO247-3
Mounting: THT
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 103A
Max. off-state voltage: 650V
Power dissipation: 112W
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 112W
Case: TO247-3
Mounting: THT
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 103A
Max. off-state voltage: 650V
Power dissipation: 112W
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
| IDH06G65C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 46µA
Power dissipation: 54W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 46µA
Power dissipation: 54W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Produkt ist nicht verfügbar
| TT500N16KOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| TZ500N16KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| TZ500N18KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| TZ600N16KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| IPI60R125CPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPL60R125P7AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel
Kind of channel: enhanced
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel
Kind of channel: enhanced
Version: ESD
Produkt ist nicht verfügbar
| IPDD60R125G7XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PG-HDSOP-10-1
Gate charge: 27nC
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 120W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PG-HDSOP-10-1
Gate charge: 27nC
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 120W
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 5.85 EUR |
| 18+ | 4.13 EUR |
| 19+ | 3.9 EUR |
| IKFW90N60EH3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Power dissipation: 178W
Technology: TRENCHSTOP™
Gate charge: 440nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 77A
Pulsed collector current: 300A
Turn-on time: 77ns
Turn-off time: 237ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Power dissipation: 178W
Technology: TRENCHSTOP™
Gate charge: 440nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 77A
Pulsed collector current: 300A
Turn-on time: 77ns
Turn-off time: 237ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
| BSS83PH6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
Power: 0.36W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
Power: 0.36W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Produkt ist nicht verfügbar
| TD215N22KOFHPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. forward impulse current: 7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. forward impulse current: 7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Produkt ist nicht verfügbar
| TZ430N22KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 430A; BG-PB501-1
Max. forward impulse current: 14kA
Gate current: 300mA
Semiconductor structure: single thyristor
Load current: 430A
Max. forward voltage: 1.78V
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB501-1
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 430A; BG-PB501-1
Max. forward impulse current: 14kA
Gate current: 300mA
Semiconductor structure: single thyristor
Load current: 430A
Max. forward voltage: 1.78V
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB501-1
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 235.28 EUR |
| TT425N16KOFHPSA3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 471A; BG-PB60AT-1; screw
Max. forward impulse current: 14.5kA
Gate current: 250mA
Semiconductor structure: double series
Load current: 471A
Max. forward voltage: 1.5V
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60AT-1
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 471A; BG-PB60AT-1; screw
Max. forward impulse current: 14.5kA
Gate current: 250mA
Semiconductor structure: double series
Load current: 471A
Max. forward voltage: 1.5V
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60AT-1
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 525.78 EUR |
| 4+ | 517.59 EUR |
| FM24CL64B-DGTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
| FM24CL16B-DG |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| FM24CL16B-DGTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
| FM24C64B-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
| CY62136EV30LL-45BVXIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Produkt ist nicht verfügbar
| CY62136EV30LL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Produkt ist nicht verfügbar
| CY62136FV30LL-45BVXIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Produkt ist nicht verfügbar
| CY62136FV30LL-45ZSXIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Produkt ist nicht verfügbar
| CY62137EV30LL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY62137FV18LL-55BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...2.25V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...2.25V DC
Produkt ist nicht verfügbar
| CY62137FV30LL-45BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY62137FV30LL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY62137FV30LL-55ZSXET |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
| CY62138EV30LL-45BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: VFBGA36
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: VFBGA36
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Produkt ist nicht verfügbar
| CY62138FV30LL-45ZAXAT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Produkt ist nicht verfügbar
| CY62138FV30LL-45ZAXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Produkt ist nicht verfügbar
| S29AL008J55TFIR23 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Interface: CFI; parallel
Operating temperature: -40...85°C
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Access time: 55ns
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Case: TSOP48
Produkt ist nicht verfügbar
| S29GL256S10DHA020 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar