Technische Details IRF7834TRPBF Infineon / IR
Description: MOSFET N-CH 30V 19A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 15 V.
Weitere Produktangebote IRF7834TRPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRF7834TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.5W; SO8 Drain-source voltage: 30V Drain current: 19A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: SO8 Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF7834TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 19A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRF7834TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.5W; SO8 Drain-source voltage: 30V Drain current: 19A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |