BCR35PNH6327 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1563 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 185+ | 0.39 EUR |
| 560+ | 0.13 EUR |
| 610+ | 0.12 EUR |
| 640+ | 0.11 EUR |
| 3000+ | 0.1 EUR |
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Technische Details BCR35PNH6327 INFINEON TECHNOLOGIES
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Frequency - Transition: 150MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: PG-SOT363-6, Part Status: Active.
Weitere Produktangebote BCR35PNH6327 nach Preis ab 0.11 EUR bis 0.84 EUR
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BCR35PNH6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 1563 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCR 35PN H6327 | Hersteller : Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-6 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCR 35PN H6327 | Hersteller : Infineon Technologies |
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
auf Bestellung 9088 Stücke: Lieferzeit 10-14 Tag (e) |
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