TD215N22KOFHPSA1 Infineon Technologies
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Technische Details TD215N22KOFHPSA1 Infineon Technologies
Category: Diode - thyristor modules, Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw, Electrical mounting: screw, Mechanical mounting: screw, Type of module: diode-thyristor, Case: BG-PB50-1, Max. off-state voltage: 2.2kV, Max. load current: 410A, Max. forward voltage: 1.8V, Load current: 215A, Semiconductor structure: double series, Gate current: 200mA, Max. forward impulse current: 7kA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TD215N22KOFHPSA1
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TD215N22KOFHPSA1 | Hersteller : INFINEON TECHNOLOGIES |
 Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 2.2kV Max. load current: 410A Max. forward voltage: 1.8V Load current: 215A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 7kA Anzahl je Verpackung: 1 Stücke |
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TD215N22KOFHPSA1 | Hersteller : Infineon Technologies |
Description: SCR MODULE 2200V 410A MODULE |
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TD215N22KOFHPSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 2.2kV Max. load current: 410A Max. forward voltage: 1.8V Load current: 215A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 7kA |
Produkt ist nicht verfügbar |