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IDW20G65C5XKSA1 Infineon Technologies
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Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
auf Bestellung 2439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.74 EUR |
30+ | 10.17 EUR |
120+ | 9.1 EUR |
510+ | 8.03 EUR |
1020+ | 7.22 EUR |
2010+ | 6.77 EUR |
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Technische Details IDW20G65C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 590pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: PG-TO247-3-41, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 210 µA @ 650 V.
Weitere Produktangebote IDW20G65C5XKSA1 nach Preis ab 12.25 EUR bis 16.79 EUR
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IDW20G65C5XKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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IDW20G65C5XKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 356 Stücke: Lieferzeit 14-21 Tag (e) |
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IDW20G65C5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; PG-TO247-3 Case: PG-TO247-3 Mounting: THT Technology: CoolSiC™ 5G; SiC Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 87A Leakage current: 4.1µA Max. off-state voltage: 650V Power dissipation: 112W Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1.8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IDW20G65C5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; PG-TO247-3 Case: PG-TO247-3 Mounting: THT Technology: CoolSiC™ 5G; SiC Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 87A Leakage current: 4.1µA Max. off-state voltage: 650V Power dissipation: 112W Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1.8V |
Produkt ist nicht verfügbar |